Question

please use knowledge of semiconductor device and fundamentals solving these problem. thanks!

Problem 3: Dopant Freezeout a) Consider a Si sample doped with arsenic (As) to a concentration 1 X 101" cm. Estimate the temperature at which only 50% of the As atoms would be ionized. (You will need to solve a transcendental equation by iteration.) Note that the intrinsic carrier concentration has significant temperature dependence (derived on pg. 55 of Pierret's book): 3/2 19 m, m m, mo o(300 You may ignore the fact that Eo, m", and mp have (weak) temperature dependence. temperature be higher or lower? Explain briefly. b) If the Si sample were doped instead with phosphorus (rather than arsenic), would the dopant freezeout

Answer 1

e Com de termime the Relanve no ey electrome m-the doner Stare G mpai γτα ω1fh the totl no o od elec toone m the clome Stare o the ttal no.cy. Clec打om» Sta te I'm the (onduct1cn band, ptu Scltn er ว่า cl 2 N /2 3oo 300 300

27 This is"Rote NOT Solvim this way

d ase use Ph. m Ranic as the atomic anel atam Size axe movearcd hemte