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Problem 3: pn Junction -- Carrier Concentration Profiles The steady-state carrier concentrations inside a Si pn step ju...
this is a problem of semiconductor device and fundamentals. Problem 4: pn Junction Current Distributions Consider a...
this is a problem of semiconductor device and
fundamentals.
Problem 4: pn Junction Current Distributions Consider a Si pn step junction diode maintained at room temperature, with p-side and n-side dopant concentrations NA 1016 cm3 and Np-2x1016 cm3, respectively. (You may assume that each side is uncompensated.) The minority carrier recombination lifetimes are τ,-10-6 s and τ,-10-7 s on the p-side and n-side, respectively a) Calculate the minority carrier densities at the edges of the depletion region when the applied...
Problem 4: Narrow-Base Diode Consider an ideal pn* step-junction Si diode maintained at 300K with cross-sectional...
Problem 4: Narrow-Base Diode Consider an ideal pn* step-junction Si diode maintained at 300K with cross-sectional area A = 104cm2. The doping concentration on the p-type side is Na= 1017 cm3 (uncompensated). (The n-type side is degenerately doped.) The electron recombination lifetime in the p-type region is tn = 10-6 s. The width of the quasi-neutral p-type region is 1 um, for VA=0 V. a Is this a narrow-base diode? Justify your answer. b) Calculate the diode saturation current Io....
Problem 2: pn Junction – Transient Response
The hole concentration on the n-side of an ideal pn step-junction Si diode at a given instant of time is as shown:a) Is the junction forward or reverse biased? Explain briefly.b) If pn0 = 103 and T = 300K, determine the applied bias, vA.c) Is there a forward or reverse current flowing through the diode? Explain briefly.
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in...
XXX is 467
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in the n-side N, = 5x1015 cm3 and the acceptor impurity concentration in the p-side N, = XXX × 1015/cm3 Assume that the diode area A-2x10-3 cm2 and 100cm work Note that the values obtained in the calculations may not be realistic as the Matric # varies greatly. The assignment is only to test your understanding, and must be handwritten Determine the...
pn-Junction – Small Signal Model
Problem 1: pn-Junction – Small Signal ModelFor the diode in Problem 2 biased at VA = 0.7 V:a) What is the diode conductance, G?b) Calculate the depletion charge, i.e. the magnitude of the charge stored on either side of the metallurgical junction in the depletion region.c) What is the depletion capacitance, CJ ?d) Calculate the magnitude of the minority-carrier charge stored in the quasi-neutral p-type region.e) What is the diffusion capacitance, CD ?f) How would your answers to parts (a),...
A pn junction diode is made of a new semiconductor with 10^16cm-3 donors in the n...
A pn junction diode is made of a new semiconductor with 10^16cm-3 donors in the n side and 2x10^17cm-3 acceptors on the p-side. Intrinsic carrier concentration is same as silicon 10^10cm-3at room temperature. Let's assume that a forward bias voltage is applied in a way that it create following minority carrier concentrations in quasi neutral regions. p(x) =10^4 + 10^14/[1+10^4(x-xn)] (cm-3) where x>xn>0 and n(x) = 500-10^15/[10^4(x+xp)-1] (cm-3) where x<-xp<0. x is given in cm scale. Calculate the total current...
A pn junction diode is made of a new semiconductor with 10^16cm-3 acceptors in the p...
A pn junction diode is made of a new semiconductor with 10^16cm-3 acceptors in the p side and 2x10^17cm-3 donors on the n-side. Intrinsic carrier concentration is same as silicon 10^10cm-3 at room temperature. Let's assume that a forward bias voltage is applied in a way that it create following minority carrier concentrations in quasi neutral regions. n(x) =10^4 - 10^14/[10^4(x+xp)-1] (cm-3) where x<xp<0 and p(x) = 500+10^15/[10^4(x+xn)+1] (cm-3) where x>xn>0. x is given in cm scale. Calculate the total...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on t...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
3. An ideal Si pn junction at 300 K is under forward bias. The minority carrier...
3. An ideal Si pn junction at 300 K is under forward bias. The minority carrier life times are 10* and 107 s for electrons and holes. The doping concentration in the n-region is ND-10° cmPlot the ratio of hole current to the total current crossing the space charge region as the p-region doping concentration (NA varies over the range 1014 to 1018 cnm Use a log scale for the doping concentrations.[use Fig.3.5(a) on P80 for mobility values) 163 cm....
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
this is a problem of semiconductor device and
fundamentals.
Problem 4: pn Junction Current Distributions Consider a Si pn step junction diode maintained at room temperature, with p-side and n-side dopant concentrations NA 1016 cm3 and Np-2x1016 cm3, respectively. (You may assume that each side is uncompensated.) The minority carrier recombination lifetimes are τ,-10-6 s and τ,-10-7 s on the p-side and n-side, respectively a) Calculate the minority carrier densities at the edges of the depletion region when the applied...
Problem 4: Narrow-Base Diode Consider an ideal pn* step-junction Si diode maintained at 300K with cross-sectional area A = 104cm2. The doping concentration on the p-type side is Na= 1017 cm3 (uncompensated). (The n-type side is degenerately doped.) The electron recombination lifetime in the p-type region is tn = 10-6 s. The width of the quasi-neutral p-type region is 1 um, for VA=0 V. a Is this a narrow-base diode? Justify your answer. b) Calculate the diode saturation current Io....
XXX is 467
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in the n-side N, = 5x1015 cm3 and the acceptor impurity concentration in the p-side N, = XXX × 1015/cm3 Assume that the diode area A-2x10-3 cm2 and 100cm work Note that the values obtained in the calculations may not be realistic as the Matric # varies greatly. The assignment is only to test your understanding, and must be handwritten Determine the...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
3. An ideal Si pn junction at 300 K is under forward bias. The minority carrier life times are 10* and 107 s for electrons and holes. The doping concentration in the n-region is ND-10° cmPlot the ratio of hole current to the total current crossing the space charge region as the p-region doping concentration (NA varies over the range 1014 to 1018 cnm Use a log scale for the doping concentrations.[use Fig.3.5(a) on P80 for mobility values) 163 cm....
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
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