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3. An ideal Si pn junction at 300 K is under forward bias. The minority carrier...
Problem 3: pn Junction -- Carrier Concentration Profiles The steady-state carrier concentrations inside a Si pn step ju...
Problem 3: pn Junction -- Carrier Concentration Profiles The steady-state carrier concentrations inside a Si pn step junction diode maintained at room temperature are shown in the plot below: п or p (log scale Pp -106 10 102 a) Is the diode forward or reverse biased? Explain briefly. b) Do low-level injection conditions prevail in the quasi-neutral regions of the diode? Explain briefly. c) What are the p-side and n-side net dopant concentrations NA and ND, respectively? d) Determine the...
Consider a silicon pn junction at T = 300 K, NA-Np - 4x106cm. The minority carrier...
Consider a silicon pn junction at T = 300 K, NA-Np - 4x106cm. The minority carrier lifetimes are tn = Tp=1 us. The junction is forward biased with V, -0.6V. The minority carrier diffusion coefficients are D = 20 cm²/s, D = 10 cm²/s. n;= 1.5x100cm, kt/e = 0.026V Depletion region n-type p-type a) (5 points) Do we have low-level injection? b) (10 points) Calculate the electron concentration at x = -(Xp + Ln) where L, is the electron diffusion...
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minor...
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minority carrier diffusion coefficients are D 25 cm/s, Da- 10 cm2/s n,1.5x1010 cm3 kT 0.0267 Depletion region p-type n-type a) (5 points) Calculate the excess electron concentration as a function of x in the p-side (see the figure above) b) (10 points) Calculate the...
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority ...
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p side (see the figure above). b) (5 points) Calculate the...
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority ...
Can someone help solve this question step by step? Thanks!
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p...
this is a problem of semiconductor device and fundamentals. Problem 4: pn Junction Current Distributions Consider a...
this is a problem of semiconductor device and
fundamentals.
Problem 4: pn Junction Current Distributions Consider a Si pn step junction diode maintained at room temperature, with p-side and n-side dopant concentrations NA 1016 cm3 and Np-2x1016 cm3, respectively. (You may assume that each side is uncompensated.) The minority carrier recombination lifetimes are τ,-10-6 s and τ,-10-7 s on the p-side and n-side, respectively a) Calculate the minority carrier densities at the edges of the depletion region when the applied...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd ...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in...
XXX is 467
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in the n-side N, = 5x1015 cm3 and the acceptor impurity concentration in the p-side N, = XXX × 1015/cm3 Assume that the diode area A-2x10-3 cm2 and 100cm work Note that the values obtained in the calculations may not be realistic as the Matric # varies greatly. The assignment is only to test your understanding, and must be handwritten Determine the...
N P n=10 p=109 1013 4.32P) The figure shows carrier densities of a Si PN junction...
N P n=10 p=109 1013 4.32P) The figure shows carrier densities of a Si PN junction diode. Before solution choose suitable positive integer values of a and b (a>b) and show this numbers clearly in a box. a) Write the bias type and explain your reason. Calculate the bias voltage. (n=101) b) What are the equilibrium values of minority carriers? c) Calculate the hole concentration on the N side at x=0. d) Diffusion constants of electron and holes has Dn=cDp...
Q3 Consider a GaAs pn junction with doping concentrations Na5 x 106 cm-3 and N1016 cm-3....
Q3 Consider a GaAs pn junction with doping concentrations Na5 x 106 cm-3 and N1016 cm-3. The junction cross-sectional area is A 103 cm2 and the applied forward-bias voltage is Va 1.10 V. Calculate the (a) minority electron diffusion cur rent at the edge of the space charge region, (b) minority hole diffusion current at the edge of the space charge region, and (c) total current in the pn junction diode.
Problem 3: pn Junction -- Carrier Concentration Profiles The steady-state carrier concentrations inside a Si pn step junction diode maintained at room temperature are shown in the plot below: п or p (log scale Pp -106 10 102 a) Is the diode forward or reverse biased? Explain briefly. b) Do low-level injection conditions prevail in the quasi-neutral regions of the diode? Explain briefly. c) What are the p-side and n-side net dopant concentrations NA and ND, respectively? d) Determine the...
Consider a silicon pn junction at T = 300 K, NA-Np - 4x106cm. The minority carrier lifetimes are tn = Tp=1 us. The junction is forward biased with V, -0.6V. The minority carrier diffusion coefficients are D = 20 cm²/s, D = 10 cm²/s. n;= 1.5x100cm, kt/e = 0.026V Depletion region n-type p-type a) (5 points) Do we have low-level injection? b) (10 points) Calculate the electron concentration at x = -(Xp + Ln) where L, is the electron diffusion...
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minority carrier diffusion coefficients are D 25 cm/s, Da- 10 cm2/s n,1.5x1010 cm3 kT 0.0267 Depletion region p-type n-type a) (5 points) Calculate the excess electron concentration as a function of x in the p-side (see the figure above) b) (10 points) Calculate the...
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p side (see the figure above). b) (5 points) Calculate the...
Can someone help solve this question step by step? Thanks!
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p...
this is a problem of semiconductor device and
fundamentals.
Problem 4: pn Junction Current Distributions Consider a Si pn step junction diode maintained at room temperature, with p-side and n-side dopant concentrations NA 1016 cm3 and Np-2x1016 cm3, respectively. (You may assume that each side is uncompensated.) The minority carrier recombination lifetimes are τ,-10-6 s and τ,-10-7 s on the p-side and n-side, respectively a) Calculate the minority carrier densities at the edges of the depletion region when the applied...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
XXX is 467
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in the n-side N, = 5x1015 cm3 and the acceptor impurity concentration in the p-side N, = XXX × 1015/cm3 Assume that the diode area A-2x10-3 cm2 and 100cm work Note that the values obtained in the calculations may not be realistic as the Matric # varies greatly. The assignment is only to test your understanding, and must be handwritten Determine the...
N P n=10 p=109 1013 4.32P) The figure shows carrier densities of a Si PN junction diode. Before solution choose suitable positive integer values of a and b (a>b) and show this numbers clearly in a box. a) Write the bias type and explain your reason. Calculate the bias voltage. (n=101) b) What are the equilibrium values of minority carriers? c) Calculate the hole concentration on the N side at x=0. d) Diffusion constants of electron and holes has Dn=cDp...
Q3 Consider a GaAs pn junction with doping concentrations Na5 x 106 cm-3 and N1016 cm-3. The junction cross-sectional area is A 103 cm2 and the applied forward-bias voltage is Va 1.10 V. Calculate the (a) minority electron diffusion cur rent at the edge of the space charge region, (b) minority hole diffusion current at the edge of the space charge region, and (c) total current in the pn junction diode.
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