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Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped...
A p-n junction is created by doping the right side of a piece of silicon with...
A p-n junction is created by doping the right side of a piece of silicon with 1014 atoms/cm3 of phosphorus and the left side with 1018 atoms/cm3 of boron. Assume that the dopants are fully ionized, and assume the junction is at x = 0 with x+ pointed to the right. a) Plot by hand (roughly to scale) an energy band diagram of the junction and label EGAP, EC, EV, EF and EFi. Using the effective density of states, calculate...
Consider an abrupt p-n junction consisted of a p-side silicon doped with 1.0E+15 cm-3 acceptors and...
Consider an abrupt p-n junction consisted of a p-side silicon doped with 1.0E+15 cm-3 acceptors and an n- side silicon doped with 1.0E+15 cm-3 donors at room temperature (no donors in p-side and no acceptors in n-side). a. Calculate the Fermi levels on each side of the junction with respect to Ei. Use the Special Conditions to find the concentrations. b. Calculate the contact potential. c .Calculate the ratio, Xpo/Xno
1. (25 pts) T=300K. Consider a uniformly doped silicon PN junction with doping concentrations N, =...
1. (25 pts) T=300K. Consider a uniformly doped silicon PN junction with doping concentrations N, = 3x10 cm and Na = 2x10 cm. Calculate Is i LN3x10 cm, Lp = 5x10 cm, and A = 10 cm. If the applied voltage is 0.68 volts, what is the current density?
A semiconductor sample is doped p-type with 1017 boron atoms/cm3 (assume p=Na). Where is the Fermi...
A semiconductor sample is doped p-type with 1017 boron atoms/cm3 (assume p=Na). Where is the Fermi level of the p-type material, ???, relative to the intrinsic Fermi level, ???? (for this sample at 300K, the intrinsic electron concentration ?? = 2 × 1013 ??−3 ).
Consider an abrupt p-n junction formed by two steps; an entire silicon sample was first doped...
Consider an abrupt p-n junction formed by two steps; an entire silicon sample was first doped with 1.0E+15 cm-3 acceptors (step I), and then a half of the sample was doped with 2.0E+15 cm-3 donors at room temperature (step II). a. Calculate the Fermi levels on each side of the junction with respect to Ei. Use the Special Conditions to find the concentrations. b. Calculate the contact potential. c. Calculate the ratio , Xpo/Xno
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.2...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.215 eV below the conduction band edge 4. a. What concentration of donor atoms were added. b. What were the concentration of holes and electrons before the silicon was counterdoped c. What are the electron and hole concentrations after the silicon was counter doped.
Silicon at at T-300 K...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.2...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.215 eV below the conduction band edge 4. a. What concentration of donor atoms were added. b. What were the concentration of holes and electrons before the silicon was counterdoped c. What are the electron and hole concentrations after the silicon was counter doped.
Silicon at at T-300 K...
Q1 (20%): The total electron concentration in a piece of lightly doped, n-type silicon at 500...
Q1 (20%): The total electron concentration in a piece of lightly doped, n-type silicon at 500 varies linearly from 1X107 cm3 at x 0 to 6 x 10 cm at x 2 um. Electrons are supplied by an external circuit to keep this concentration constant with time. Calculate the electron current density in the silicon if no electric field is present at x 0. Assume H 1000 cm2/V-s. X-2um
Q1 (20%): The total electron concentration in a piece of lightly...
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T =...
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T = 300'K that is doped with phosphors atoms at a concentration of 1015 cm. (b) Repeat (a) if the silicon is doped with boron atoms at a concentration of 10'5 cm3. (c) Calculate the electron concentration in the silicon for parts (a) and (b) P1. For the Boltzmann approximation to be valid for a semiconductor, the Fermi level must be...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with elec...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
1. (25 pts) T=300K. Consider a uniformly doped silicon PN junction with doping concentrations N, = 3x10 cm and Na = 2x10 cm. Calculate Is i LN3x10 cm, Lp = 5x10 cm, and A = 10 cm. If the applied voltage is 0.68 volts, what is the current density?
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.215 eV below the conduction band edge 4. a. What concentration of donor atoms were added. b. What were the concentration of holes and electrons before the silicon was counterdoped c. What are the electron and hole concentrations after the silicon was counter doped.
Silicon at at T-300 K...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.215 eV below the conduction band edge 4. a. What concentration of donor atoms were added. b. What were the concentration of holes and electrons before the silicon was counterdoped c. What are the electron and hole concentrations after the silicon was counter doped.
Silicon at at T-300 K...
Q1 (20%): The total electron concentration in a piece of lightly doped, n-type silicon at 500 varies linearly from 1X107 cm3 at x 0 to 6 x 10 cm at x 2 um. Electrons are supplied by an external circuit to keep this concentration constant with time. Calculate the electron current density in the silicon if no electric field is present at x 0. Assume H 1000 cm2/V-s. X-2um
Q1 (20%): The total electron concentration in a piece of lightly...
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T = 300'K that is doped with phosphors atoms at a concentration of 1015 cm. (b) Repeat (a) if the silicon is doped with boron atoms at a concentration of 10'5 cm3. (c) Calculate the electron concentration in the silicon for parts (a) and (b) P1. For the Boltzmann approximation to be valid for a semiconductor, the Fermi level must be...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
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