Question

A p-n junction is created by doping the right side of a piece of silicon with...

A p-n junction is created by doping the right side of a piece of silicon with 1014 atoms/cm3 of phosphorus and the left side with 1018 atoms/cm3 of boron. Assume that the dopants are fully ionized, and assume the junction is at x = 0 with x+ pointed to the right.

a) Plot by hand (roughly to scale) an energy band diagram of the junction and label EGAP, EC, EV, EF and EFi. Using the effective density of states, calculate and label EF-EV on the p-side and EC-EF on the n-side of the junction. From this plot, calculate and label the built-in voltage Vbi.

b) Calculate Vbi using the intrinsic carrier concentration - does it match the value you calculated in (a)?

c) Plot by hand, as a function of position, the total charge concentration and the concentration of electrons in the conduction band (separate plots, one below the other). In your plots, calculate and label the values of concentration in the p- and n-type regions, and at x = 0 if applicable.

d) Calculate xn and xp, the widths of the depletion regions on the n- and p-sides, respectively, and the total depletion width W.

e) Plot the electric field as a function of position, labeling the location and value of maximum electric field and the x-positions of the depletion regions.

f) Plot the voltage as a function of position, labeling the location and value of maximum voltage and the x-positions of the depletion regions

0 0
Add a comment Improve this question Transcribed image text
Answer #1

Sol ive thot 697 Volts Na total ordth ぅ = 3.03 x (0.4 cms -8 Electicfe ld 團困alteyefe.de Elechc He Cim (vol4s)

Add a comment
Know the answer?
Add Answer to:
A p-n junction is created by doping the right side of a piece of silicon with...
Your Answer:

Post as a guest

Your Name:

What's your source?

Earn Coins

Coins can be redeemed for fabulous gifts.

Not the answer you're looking for? Ask your own homework help question. Our experts will answer your question WITHIN MINUTES for Free.
Similar Homework Help Questions
  • For a Si p-n junction with p-type doping of 1 x 10^16/cm3 and n-type doping of...

    For a Si p-n junction with p-type doping of 1 x 10^16/cm3 and n-type doping of 1 x 10^19/cm3, calculate the built-in potential Vb at 300K, dark, thermal equilibrium condition. Please show the equations and parameters used in the calculation and the value of Ec-Ef, Ef-Ev, and Vb. Please draw a band structure similar to the one in lecture 5 slide 6 based on your results, please also label Ec, Ev, Vb, and Ef in the drawing.

  • Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped...

    Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...

  • 1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in...

    1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...

  • A Si step junction maintained at room temperature under equilibrium conditions has a p-side doping of...

    A Si step junction maintained at room temperature under equilibrium conditions has a p-side doping of Na = 2x1015/cm3 , and an n-side doping of Nd = 1015/cm3 . Compute (a) Built-in potential Vbi (b) Depletion region width W, and xp, xn (c) Maximum electric field at x=0 (d) Electrostatic potential V at x=0 (e) Make sketches of the charge density, electric field, and electrostatic potential as a function of position x

  • 2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the rev...

    2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the reverse breakdown voltage is 45 V. and the depletion widths (on the n-side and on the p-side) 3. Calculate the built-in voltage 19 in a silicon pn Junction with Na = 5x101 /cc and Nd = 1 x 10 /cc given that the junction is reverse biased at 5 V. /mi 2. Suppose you have a silicon wafer...

  • 4. AP-N abrupt junction is formed in Silicon as follows: The P-side has a uniform acceptor...

    4. AP-N abrupt junction is formed in Silicon as follows: The P-side has a uniform acceptor concentration of 2E18/cm^3 and the N-side has a uniform donor concentration of 2E15/cm^3. (a) Find the built-in voltage, V of the P-N junction at 300K. (b) Find the width of the depletion regions in the P and N regions of the transition region for zero reverse bias and for 5V reverse bias. (c) What is the depletion capacitance per unit area with zero reverse...

  • 1. a. Find the main error in each of the band diagrams shown below. For all...

    1. a. Find the main error in each of the band diagrams shown below. For all of the band diagrams Ny 1019/cm3, Ne- 1019/cm3, ni = 3 x 108/cm". E,-1.25 eV, T = 300 K. Ef Ef EFi Main error: Main error: Main error: Main error: Consider a semiconductor sample with the following characteristics: EG 1.25 eV, T 300 K, Nd 5 x 101*/cm3, Na 1014/cm3, N.-1019/cm3, N.-1019/cm3, ni-3 × 108/cm3. Assume complete ionization b. Find the equilibrium electron and...

  • Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities...

    Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities: (a) Reverse saturation hole current component (b) Reverse saturation electron current component. (c) Minority carrier concentrations at the edge of the depletion layer, p(0) and pr(0), for a forward voltage of 0.6 V (d) Electron and hole current for the bias condition of (c). (e) Make a rough sketch...

  • Q1) A diode has a doping of No- 1019 /cm3 on the n-type side and NA 101/cm3 on the p-type side. W...

    Q1) A diode has a doping of No- 1019 /cm3 on the n-type side and NA 101/cm3 on the p-type side. What are the a) width of depletion region, b) width of depletion region in n side, c) width of depletion region in p side, d) junction potential at zero bias, e) junction width at a reverse bias of 13 V, and f) maximum electric field in zero bias just in the middle of the P-N junction at room temperature?...

  • B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type...

    B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type Si Fig. B2 (a). If the dopant concentrations of the n layer and the p-type silicon are 6x101" cm and 8x10 cm respectively, calculate the built-in potential of the p-n junction at room temperature (300 K) 15 (3 marks) (b). Due to overheating of the silicon sample, the diode has an operation temperature of 200 °C and...

ADVERTISEMENT
Free Homework Help App
Download From Google Play
Scan Your Homework
to Get Instant Free Answers
Need Online Homework Help?
Ask a Question
Get Answers For Free
Most questions answered within 3 hours.
ADVERTISEMENT
ADVERTISEMENT
ADVERTISEMENT