For a Si p-n junction with p-type doping of 1 x 10^16/cm3 and n-type doping of...
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For a Si p-n junction with p-type doping of 1 x 10^16/cm3 and n-type doping of 1 x 10^19/cm3, calculate the built-in potential Vb at 300K, dark, thermal equilibrium condition. Please show the equations and parameters used in the calculation and the value of Ec-Ef, Ef-Ev, and Vb. Please draw a band structure similar to the one in lecture 5 slide 6 based on your results, please also label Ec, Ev, Vb, and Ef in the drawing.
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For a Si p-n junction with p-type doping of 1 x 10^16/cm3 and
n-type doping of...
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1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in...
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Problem 6. (3points) Consider a p-type Si sample with doping concentration NA 1018 cm3. Determine the...
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Applied quantum mechanics 1. Calculate the carrier concentrations (p and n) for Si at 300k for...
Applied quantum mechanics
1. Calculate the carrier concentrations (p and n) for Si at
300k for the following doping concentrations:
2.
(a) ND = 1015/cm3
(b) NA = 1018/cm3
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(a)...
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14 Q1. Given a NA = 10 /cm" doped Si sample a) b) c) Calculate Ef...
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All needed data is given. Please solve clearly.
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Q1) A diode has a doping of No- 1019 /cm3 on the n-type side and NA 101/cm3 on the p-type side. W...
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Applied quantum mechanics
1. Calculate the carrier concentrations (p and n) for Si at
300k for the following doping concentrations:
2.
(a) ND = 1015/cm3
(b) NA = 1018/cm3
(c) ND = 5 x 1017/cm3
Calculate the majority and minority carriers for each side of
an N+P junction if ND = 2 x 1017/cm3 for the n-side, and NA =
1014/cm3 for the p-side.
Assume the semiconductor is Si and the temperature is
300K.
3. Determine the energy of:
(a)...
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All needed data is given. Please solve clearly.
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