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1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in...
Q1) A diode has a doping of No- 1019 /cm3 on the n-type side and NA 101/cm3 on the p-type side. W...
Q1) A diode has a doping of No- 1019 /cm3 on the n-type side and NA 101/cm3 on the p-type side. What are the a) width of depletion region, b) width of depletion region in n side, c) width of depletion region in p side, d) junction potential at zero bias, e) junction width at a reverse bias of 13 V, and f) maximum electric field in zero bias just in the middle of the P-N junction at room temperature?...
3. Consider a varicap diode made of Si p-n junction is being used in a radio tuning circuit (LC t...
3. Consider a varicap diode made of Si p-n junction is being used in a radio tuning circuit (LC tank) as shown on right. The n-side of the diode has a doping concentration of 2x1016 cm3 and the built-in voltage is 802 mV. Calculate the reverse bias voltage (V) required to tune into the FM station at 106.7 MHz. The junction area is 100 μ㎡ L 220 uH V, Solution We were unable to transcribe this image
3. Consider a...
1. (2) A Si p-n junction has sides with boron doping at 107 cm and phosphorus...
1. (2) A Si p-n junction has sides with boron doping at 107 cm and phosphorus doping at 5.0x10^? cm? The junction has a cross-sectional area of 104 cm. It is in equilibrium at a temperature of 300 K. For Si, the intrinsic charge carrier density is 1.5x100 cm and the dielectric constant is 11.8. State the contact potential, the total depletion region width, the depletion region widths on the p-side and n- side, and the peak electric field. What...
The doping and geometric parameters of a P–N junction diode are: - ND = 10^20 cm−3,...
The doping and geometric parameters of a P–N junction diode are: - ND = 10^20 cm−3, Wcathode = 1 μm <<Lp, - NA = 5 × 10^15 cm−3, Wanode = 10 μm <<Ln, - Junction area AJ = 500 × 500 μm2. Calculate the reverse biasing current IS, and then use this result to obtain the forward voltage that corresponds to a current of 100 mA, if the semiconductor material is: (a) Si (μn = 1450 cm2/V · s, μp...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...
2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the rev...
2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the reverse breakdown voltage is 45 V. and the depletion widths (on the n-side and on the p-side) 3. Calculate the built-in voltage 19 in a silicon pn Junction with Na = 5x101 /cc and Nd = 1 x 10 /cc given that the junction is reverse biased at 5 V. /mi
2. Suppose you have a silicon wafer...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole diffusion coefficient is D 12 cm2/s and the minority carrier hole lifetime is po 10-7 s. The cross sectional area is A 10- cm2. Calculate the reverse saturation current and the diode current at a forward-bias voltage of 0.50v A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm", ,...
A p-n junction is created by doping the right side of a piece of silicon with...
A p-n junction is created by doping the right side of a piece of silicon with 1014 atoms/cm3 of phosphorus and the left side with 1018 atoms/cm3 of boron. Assume that the dopants are fully ionized, and assume the junction is at x = 0 with x+ pointed to the right. a) Plot by hand (roughly to scale) an energy band diagram of the junction and label EGAP, EC, EV, EF and EFi. Using the effective density of states, calculate...
THE REVERSE BIAS VOLTAGE APPLIED TO SILICON PN JUNCTION DIODE IS 4V, DOPING CONCENTRATION Na is...
THE REVERSE BIAS VOLTAGE APPLIED TO SILICON PN JUNCTION DIODE IS 4V, DOPING CONCENTRATION Na is 10^17 cm^-3, Nd = 10^16 cm^-3, ni = 1.3 x 10^9 cm^-3, temperature T = 273 k find the width of depletion region with the applied reverse voltage please check your answer that it is correct please it is a humble request
1. At what voltage the current density in a p-n diode reaches a magnitude of 10A/cm2? The diode is made by doping with boron are phosphorous with concentrations of 1018 and 1019 cm3 respectively 1600...
1. At what voltage the current density in a p-n diode reaches a magnitude of 10A/cm2? The diode is made by doping with boron are phosphorous with concentrations of 1018 and 1019 cm3 respectively 1600 kT 1200 200
1. At what voltage the current density in a p-n diode reaches a magnitude of 10A/cm2? The diode is made by doping with boron are phosphorous with concentrations of 1018 and 1019 cm3 respectively 1600 kT 1200 200
Q1) A diode has a doping of No- 1019 /cm3 on the n-type side and NA 101/cm3 on the p-type side. What are the a) width of depletion region, b) width of depletion region in n side, c) width of depletion region in p side, d) junction potential at zero bias, e) junction width at a reverse bias of 13 V, and f) maximum electric field in zero bias just in the middle of the P-N junction at room temperature?...
3. Consider a varicap diode made of Si p-n junction is being used in a radio tuning circuit (LC tank) as shown on right. The n-side of the diode has a doping concentration of 2x1016 cm3 and the built-in voltage is 802 mV. Calculate the reverse bias voltage (V) required to tune into the FM station at 106.7 MHz. The junction area is 100 μ㎡ L 220 uH V, Solution We were unable to transcribe this image
3. Consider a...
1. (2) A Si p-n junction has sides with boron doping at 107 cm and phosphorus doping at 5.0x10^? cm? The junction has a cross-sectional area of 104 cm. It is in equilibrium at a temperature of 300 K. For Si, the intrinsic charge carrier density is 1.5x100 cm and the dielectric constant is 11.8. State the contact potential, the total depletion region width, the depletion region widths on the p-side and n- side, and the peak electric field. What...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...
2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the reverse breakdown voltage is 45 V. and the depletion widths (on the n-side and on the p-side) 3. Calculate the built-in voltage 19 in a silicon pn Junction with Na = 5x101 /cc and Nd = 1 x 10 /cc given that the junction is reverse biased at 5 V. /mi
2. Suppose you have a silicon wafer...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole diffusion coefficient is D 12 cm2/s and the minority carrier hole lifetime is po 10-7 s. The cross sectional area is A 10- cm2. Calculate the reverse saturation current and the diode current at a forward-bias voltage of 0.50v A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm", ,...
1. At what voltage the current density in a p-n diode reaches a magnitude of 10A/cm2? The diode is made by doping with boron are phosphorous with concentrations of 1018 and 1019 cm3 respectively 1600 kT 1200 200
1. At what voltage the current density in a p-n diode reaches a magnitude of 10A/cm2? The diode is made by doping with boron are phosphorous with concentrations of 1018 and 1019 cm3 respectively 1600 kT 1200 200
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