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1. (2) A Si p-n junction has sides with boron doping at 107 cm and phosphorus...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...
A p-n junction is created by doping the right side of a piece of silicon with...
A p-n junction is created by doping the right side of a piece of silicon with 1014 atoms/cm3 of phosphorus and the left side with 1018 atoms/cm3 of boron. Assume that the dopants are fully ionized, and assume the junction is at x = 0 with x+ pointed to the right. a) Plot by hand (roughly to scale) an energy band diagram of the junction and label EGAP, EC, EV, EF and EFi. Using the effective density of states, calculate...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on t...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the rev...
2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the reverse breakdown voltage is 45 V. and the depletion widths (on the n-side and on the p-side) 3. Calculate the built-in voltage 19 in a silicon pn Junction with Na = 5x101 /cc and Nd = 1 x 10 /cc given that the junction is reverse biased at 5 V. /mi
2. Suppose you have a silicon wafer...
A silicon p-n junction is made by doping the p and n sides with doping density...
A silicon p-n junction is made by doping the p and n sides with doping density of Na=3E15 cm and Nd=2E18 cm". At T=300 K in equilibrium find: e) Draw the energy diagram inclusive of Xn, Xp, energy and fermi levels
A Si step junction maintained at room temperature under equilibrium conditions has a p-side doping of...
A Si step junction maintained at room temperature under equilibrium conditions has a p-side doping of Na = 2x1015/cm3 , and an n-side doping of Nd = 1015/cm3 . Compute (a) Built-in potential Vbi (b) Depletion region width W, and xp, xn (c) Maximum electric field at x=0 (d) Electrostatic potential V at x=0 (e) Make sketches of the charge density, electric field, and electrostatic potential as a function of position x
6.7. 6.8. For an abrupt Si PN junction at 300 K the doping levels are N....
6.7. 6.8. For an abrupt Si PN junction at 300 K the doping levels are N. = 2 x 10 and N = 1.5 X 10 cm and the junction cross section is A = 1 mm (a) After equilibrium is reached, how many electrons have crossed the junction and recombined to generate the depletion region? (b) How many holes ? An abrupt Si PN junction at 300 K is characterized by N. = 10 cm and No = 2...
2. Doping Si nanowires I want to grow Si nanowires with a p-doped and n-doped region...
2. Doping Si nanowires I want to grow Si nanowires with a p-doped and n-doped region within the same Si nanowire via vapor-liquid-solid mechanism using gold nanoparticles as catalyst. For dopants, I want to use boron and phosphorus. How would you do this? Describe your growth process (steps) and conditions. You can refer to class notes and Journal of Physical Chemistry B 104, p.5123 (2000) for inspiration N-doped P-doped
Problem1 10" ㎝aandn-side Callibrium at 3000 K has ap side dup ing of NA-2 doping of ND-101 cm Ca...
Problem1 10" ㎝aandn-side Callibrium at 3000 K has ap side dup ing of NA-2 doping of ND-101 cm Calculate: (a) The contact potential (also called built-in voltage) (b) The depletion layer width at the p-side and n-sides, and the total depletion layer width. (c) The electric field at the metallurgical junction. (d) The potential at the metallurgical junction. (e) Make sketches of the charge density, electric field and electrostatic potential as a function of position, that are roughly to scale....
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the reverse breakdown voltage is 45 V. and the depletion widths (on the n-side and on the p-side) 3. Calculate the built-in voltage 19 in a silicon pn Junction with Na = 5x101 /cc and Nd = 1 x 10 /cc given that the junction is reverse biased at 5 V. /mi
2. Suppose you have a silicon wafer...
A silicon p-n junction is made by doping the p and n sides with doping density of Na=3E15 cm and Nd=2E18 cm". At T=300 K in equilibrium find: e) Draw the energy diagram inclusive of Xn, Xp, energy and fermi levels
6.7. 6.8. For an abrupt Si PN junction at 300 K the doping levels are N. = 2 x 10 and N = 1.5 X 10 cm and the junction cross section is A = 1 mm (a) After equilibrium is reached, how many electrons have crossed the junction and recombined to generate the depletion region? (b) How many holes ? An abrupt Si PN junction at 300 K is characterized by N. = 10 cm and No = 2...
2. Doping Si nanowires I want to grow Si nanowires with a p-doped and n-doped region within the same Si nanowire via vapor-liquid-solid mechanism using gold nanoparticles as catalyst. For dopants, I want to use boron and phosphorus. How would you do this? Describe your growth process (steps) and conditions. You can refer to class notes and Journal of Physical Chemistry B 104, p.5123 (2000) for inspiration N-doped P-doped
Problem1 10" ㎝aandn-side Callibrium at 3000 K has ap side dup ing of NA-2 doping of ND-101 cm Calculate: (a) The contact potential (also called built-in voltage) (b) The depletion layer width at the p-side and n-sides, and the total depletion layer width. (c) The electric field at the metallurgical junction. (d) The potential at the metallurgical junction. (e) Make sketches of the charge density, electric field and electrostatic potential as a function of position, that are roughly to scale....
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