Question

A silicon p-n junction is made by doping the p and n sides with doping density of Na=3E15 cm and Nd=2E18 cm. At T=300 K in ee) Draw the energy diagram inclusive of Xn, Xp, energy and fermi levels

0 0
Add a comment Improve this question Transcribed image text
Answer #1

Mote For Silicon At T-Book noz 1x10 /cm²,602117 KT- eher Уте на уу | Eg=liler , NA= 3x105 (amb No=2x160 / cm3 * No- ve en INAAs we know that x= xpt xn and xn ND = xp. NA x=xPt XP NA XPF IND NATND Xp=5.ony xlon* 2000 3+ 2000 p= 5.854. xohen x= x* NA NEnergy Band diagram Echo Eal2 * Eft - IEFT Eulz ECN Efn 89/2 & EFN Effa Eve - I Eu/2 Efi olan IK *

Add a comment
Know the answer?
Add Answer to:
A silicon p-n junction is made by doping the p and n sides with doping density...
Your Answer:

Post as a guest

Your Name:

What's your source?

Earn Coins

Coins can be redeemed for fabulous gifts.

Not the answer you're looking for? Ask your own homework help question. Our experts will answer your question WITHIN MINUTES for Free.
Similar Homework Help Questions
  • A p-n junction is created by doping the right side of a piece of silicon with...

    A p-n junction is created by doping the right side of a piece of silicon with 1014 atoms/cm3 of phosphorus and the left side with 1018 atoms/cm3 of boron. Assume that the dopants are fully ionized, and assume the junction is at x = 0 with x+ pointed to the right. a) Plot by hand (roughly to scale) an energy band diagram of the junction and label EGAP, EC, EV, EF and EFi. Using the effective density of states, calculate...

  • 1. (2) A Si p-n junction has sides with boron doping at 107 cm and phosphorus...

    1. (2) A Si p-n junction has sides with boron doping at 107 cm and phosphorus doping at 5.0x10^? cm? The junction has a cross-sectional area of 104 cm. It is in equilibrium at a temperature of 300 K. For Si, the intrinsic charge carrier density is 1.5x100 cm and the dielectric constant is 11.8. State the contact potential, the total depletion region width, the depletion region widths on the p-side and n- side, and the peak electric field. What...

  • A Si step junction maintained at room temperature under equilibrium conditions has a p-side doping of...

    A Si step junction maintained at room temperature under equilibrium conditions has a p-side doping of Na = 2x1015/cm3 , and an n-side doping of Nd = 1015/cm3 . Compute (a) Built-in potential Vbi (b) Depletion region width W, and xp, xn (c) Maximum electric field at x=0 (d) Electrostatic potential V at x=0 (e) Make sketches of the charge density, electric field, and electrostatic potential as a function of position x

  • 2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the rev...

    2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the reverse breakdown voltage is 45 V. and the depletion widths (on the n-side and on the p-side) 3. Calculate the built-in voltage 19 in a silicon pn Junction with Na = 5x101 /cc and Nd = 1 x 10 /cc given that the junction is reverse biased at 5 V. /mi 2. Suppose you have a silicon wafer...

  • 1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in...

    1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...

  • Wdep P-Type N -Type Q1. Consider the PN junction at equilibrium shown in the figure above....

    Wdep P-Type N -Type Q1. Consider the PN junction at equilibrium shown in the figure above. Both N-side and P-side has same doping density NA ND 1017 /cm3. Assume both electron and hole mobility to be same, i.e Me - 1000cm2/Vs. a equilibrium energy band diagram. Find (EF Et at(i)x-0. (ii) x »xn (iii) X <K_Xp Find the value of built-in voltage and total depletion width (5+5 points) Find electron and hole densities at (i) x = 0. (ii) x...

  • 6.7. 6.8. For an abrupt Si PN junction at 300 K the doping levels are N....

    6.7. 6.8. For an abrupt Si PN junction at 300 K the doping levels are N. = 2 x 10 and N = 1.5 X 10 cm and the junction cross section is A = 1 mm (a) After equilibrium is reached, how many electrons have crossed the junction and recombined to generate the depletion region? (b) How many holes ? An abrupt Si PN junction at 300 K is characterized by N. = 10 cm and No = 2...

  • B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type...

    B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type Si Fig. B2 (a). If the dopant concentrations of the n layer and the p-type silicon are 6x101" cm and 8x10 cm respectively, calculate the built-in potential of the p-n junction at room temperature (300 K) 15 (3 marks) (b). Due to overheating of the silicon sample, the diode has an operation temperature of 200 °C and...

  • THE REVERSE BIAS VOLTAGE APPLIED TO SILICON PN JUNCTION DIODE IS 4V, DOPING CONCENTRATION Na is...

    THE REVERSE BIAS VOLTAGE APPLIED TO SILICON PN JUNCTION DIODE IS 4V, DOPING CONCENTRATION Na is 10^17 cm^-3, Nd = 10^16 cm^-3, ni = 1.3 x 10^9 cm^-3, temperature T = 273 k find the width of depletion region with the applied reverse voltage please check your answer that it is correct please it is a humble request

  • 1. (25 pts) T=300K. Consider a uniformly doped silicon PN junction with doping concentrations N, =...

    1. (25 pts) T=300K. Consider a uniformly doped silicon PN junction with doping concentrations N, = 3x10 cm and Na = 2x10 cm. Calculate Is i LN3x10 cm, Lp = 5x10 cm, and A = 10 cm. If the applied voltage is 0.68 volts, what is the current density?

ADVERTISEMENT
Free Homework Help App
Download From Google Play
Scan Your Homework
to Get Instant Free Answers
Need Online Homework Help?
Ask a Question
Get Answers For Free
Most questions answered within 3 hours.
ADVERTISEMENT
ADVERTISEMENT
ADVERTISEMENT