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A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is...
Consider a silicon pn step junction diode with NA-1x1018 cm3 and No 1x1017cm-3, maintained at T...
Consider a silicon pn step junction diode with NA-1x1018 cm3 and No 1x1017cm-3, maintained at T 300K. The minority carrier lifetimes in the p-side and n-side are τη-10-8 s and Tp-10-7 s, respectively. a) Calculate the minority carrier densities at the edges of the depletion region when the applied voltage (VA) is 0.6 V. of the junction, for the applied bias voltage of part (a) densities are equal in magnitude, for the applied voltage of part (a). b) Sketch the...
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in...
XXX is 467
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in the n-side N, = 5x1015 cm3 and the acceptor impurity concentration in the p-side N, = XXX × 1015/cm3 Assume that the diode area A-2x10-3 cm2 and 100cm work Note that the values obtained in the calculations may not be realistic as the Matric # varies greatly. The assignment is only to test your understanding, and must be handwritten Determine the...
Q2 (24%) A Si PN junction is operating at 300K. The device parameters are as follows:...
Q2 (24%) A Si PN junction is operating at 300K. The device parameters are as follows: Na 5X1016 /cm3 D2-10cm2ls Na 1X1016/cm3 D-25 cm2Is Tpo=T10= 5X1078 a. Calculate Vhi . b. Calculate xn and xp c. Plot the electric field strength across the entire pn junction and calculate the peak electric field in the space charge region d. If a forward bias voltage of 0.7V is applied, find the forward current density e. Draw the energy band diagram for the...
THE REVERSE BIAS VOLTAGE APPLIED TO SILICON PN JUNCTION DIODE IS 4V, DOPING CONCENTRATION Na is...
THE REVERSE BIAS VOLTAGE APPLIED TO SILICON PN JUNCTION DIODE IS 4V, DOPING CONCENTRATION Na is 10^17 cm^-3, Nd = 10^16 cm^-3, ni = 1.3 x 10^9 cm^-3, temperature T = 273 k find the width of depletion region with the applied reverse voltage please check your answer that it is correct please it is a humble request
A pn iunction diode has the following parameters, Na-2x10^17 Dp 10.36 Tp - 5x10-'s Area is...
A pn iunction diode has the following parameters, Na-2x10^17 Dp 10.36 Tp - 5x10-'s Area is 1mm 2 Nc-1x10 16 Dn-18.13 Tn-5x10-s Length of diode is 100 mm At equilibrium, what is the width of the depletion region, the built in potential, the electric field across the depletion region and the capacitance of the depletion region a. b. Can you tell from the doping levels which region the depletion regioin c. Find the Fermi level in both regions and the...
pn-Junction – Small Signal Model
Problem 1: pn-Junction – Small Signal ModelFor the diode in Problem 2 biased at VA = 0.7 V:a) What is the diode conductance, G?b) Calculate the depletion charge, i.e. the magnitude of the charge stored on either side of the metallurgical junction in the depletion region.c) What is the depletion capacitance, CJ ?d) Calculate the magnitude of the minority-carrier charge stored in the quasi-neutral p-type region.e) What is the diffusion capacitance, CD ?f) How would your answers to parts (a),...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
A silicon p+ n step junction diode at room temperature has N_d = 10^16 cm-3. a)...
A silicon p+ n step junction diode at room temperature has N_d = 10^16 cm-3. a) What breakdown mechanism do you expect will be dominant in this device? Explain. b) Find the approximate breakdown voltage for this diode. c) Calculate the depletion width at the breakdown voltage. d) What is the maximum magnitude of the electric field in the depletion region at the breakdown voltage?
Q1) A diode has a doping of No- 1019 /cm3 on the n-type side and NA 101/cm3 on the p-type side. W...
Q1) A diode has a doping of No- 1019 /cm3 on the n-type side and NA 101/cm3 on the p-type side. What are the a) width of depletion region, b) width of depletion region in n side, c) width of depletion region in p side, d) junction potential at zero bias, e) junction width at a reverse bias of 13 V, and f) maximum electric field in zero bias just in the middle of the P-N junction at room temperature?...
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities...
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities: (a) Reverse saturation hole current component (b) Reverse saturation electron current component. (c) Minority carrier concentrations at the edge of the depletion layer, p(0) and pr(0), for a forward voltage of 0.6 V (d) Electron and hole current for the bias condition of (c). (e) Make a rough sketch...
Consider a silicon pn step junction diode with NA-1x1018 cm3 and No 1x1017cm-3, maintained at T 300K. The minority carrier lifetimes in the p-side and n-side are τη-10-8 s and Tp-10-7 s, respectively. a) Calculate the minority carrier densities at the edges of the depletion region when the applied voltage (VA) is 0.6 V. of the junction, for the applied bias voltage of part (a) densities are equal in magnitude, for the applied voltage of part (a). b) Sketch the...
XXX is 467
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in the n-side N, = 5x1015 cm3 and the acceptor impurity concentration in the p-side N, = XXX × 1015/cm3 Assume that the diode area A-2x10-3 cm2 and 100cm work Note that the values obtained in the calculations may not be realistic as the Matric # varies greatly. The assignment is only to test your understanding, and must be handwritten Determine the...
Q2 (24%) A Si PN junction is operating at 300K. The device parameters are as follows: Na 5X1016 /cm3 D2-10cm2ls Na 1X1016/cm3 D-25 cm2Is Tpo=T10= 5X1078 a. Calculate Vhi . b. Calculate xn and xp c. Plot the electric field strength across the entire pn junction and calculate the peak electric field in the space charge region d. If a forward bias voltage of 0.7V is applied, find the forward current density e. Draw the energy band diagram for the...
A pn iunction diode has the following parameters, Na-2x10^17 Dp 10.36 Tp - 5x10-'s Area is 1mm 2 Nc-1x10 16 Dn-18.13 Tn-5x10-s Length of diode is 100 mm At equilibrium, what is the width of the depletion region, the built in potential, the electric field across the depletion region and the capacitance of the depletion region a. b. Can you tell from the doping levels which region the depletion regioin c. Find the Fermi level in both regions and the...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
Q1) A diode has a doping of No- 1019 /cm3 on the n-type side and NA 101/cm3 on the p-type side. What are the a) width of depletion region, b) width of depletion region in n side, c) width of depletion region in p side, d) junction potential at zero bias, e) junction width at a reverse bias of 13 V, and f) maximum electric field in zero bias just in the middle of the P-N junction at room temperature?...
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities: (a) Reverse saturation hole current component (b) Reverse saturation electron current component. (c) Minority carrier concentrations at the edge of the depletion layer, p(0) and pr(0), for a forward voltage of 0.6 V (d) Electron and hole current for the bias condition of (c). (e) Make a rough sketch...
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