Question

A pn iunction diode has the following parameters, Na-2x10^17 Dp 10.36 Tp - 5x10-'s Area is 1mm 2 Nc-1x10 16 Dn-18.13 Tn-5x10-s Length of diode is 100 mm At equilibrium, what is the width of the depletion region, the built in potential, the electric field across the depletion region and the capacitance of the depletion region a. b. Can you tell from the doping levels which region the depletion regioin c. Find the Fermi level in both regions and the concentration of the d. At a reverse bias of 5 V, what is the width of the depletion region, the will extend further into majority and minority carriers in each region. built in potential, the electric field across the depletion region and the capacitance of the depletion region. Repeat the calculations for a forward bias of 0.6 V V What is the excess carrier density at the depletion region edges under this bias voltage, What is the the current through this device at this bias voltage Draw the energy band diagrams for these three cases and the generalized pn diode showing the depletion regions under these bias conditions. BonuS e. f. g. h. (3pts) what are the quasi fermi levels in this device in this device under the 1.0 V forward bias

Answer 1