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6. (14) A silicon wafer (Si: ni=10cm-3 and Er=11 ) is used to make a PN junction over a circular area with a diameter r=1mm.

) A silicon wafer (Si: n = 100cm 3 and ε = 11) is used to make a PN junction over a circular area with a diameter r=1 mm. Alu

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No=1015 cm3 ni= 10 cm 3 NA= 1010 cm3 r=1 mm (9) Efn-Efi = RT ln (No T= 300k V = kg =25mv = 25x10. in/ 1015) Pein- feri - 0 8(6) band diagram V = Vbi - Vapplied applied = 1 V = Vbit 1 = 0.63+1 = 1.63v P I I IN . Ec - wt - taceol-ev W = W = 2x b. 8581Emax = -2V -2(Vbi + Vy) لا لا Emax = - 2x163 - 7.348105 4.448156 E = max A=T(D) G - EA 6.65X162 x KX IXLOS 4,44X-166 4 G = 6.increases. It has low doping. & gener break down as This is very heavily doped- so very Thin depletion region has more. numbe

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