Consider a gold-GaAs Schottky diode with a capacitance of 1 pF at -1 V. What is...
- Consider a gold-GaAs Schottky diode with a capacitance of 1 pF at -1 V. What is the doping density of the GaAs? Also calculate the depletion layer width at zero bias and the field at the surface of the semiconductor at -10 V bias voltage. The area of the diode is 10-5 cm2.
- Design a platinum-silicon diode with a capacitance of 1 pF and a maximum electric field less than 104 V/cm at -10 V bias. Provide a possible doping density and area. Make sure the diode has an area between 10-5 and 10-7 cm2. Is it possible to satisfy all requirements if the doping density equals 1017 cm-3?
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Consider a gold-GaAs Schottky diode with a capacitance of 1 pF
at -1 V. What is...
Depletion-Layer Analysis for Schottky 4.20 (a) Calculate the small signal capacitance at zero bia...
Materials Science/Electronic Circuits
Parts a and b please
Depletion-Layer Analysis for Schottky 4.20 (a) Calculate the small signal capacitance at zero bias and 300 K for an ideal Schottky Diodes barrier [see Eq. (4,16.2)] between platinum (work function 5,3 ev) and silicon doped with Nd 101°cm. The area of the Schottky diode is 10c (b) Calculate the reverse bias at which the capacitance is reduced by 25% from its zero- bias value. (4.16.2)
Depletion-Layer Analysis for Schottky 4.20 (a) Calculate...
1. A metal/n-GaAs Schottky Barrier is formed by depositing platinum on n-GaAs. The electron affinity of...
1. A metal/n-GaAs Schottky Barrier is formed by depositing platinum on n-GaAs. The electron affinity of GaAs is 4.0 eV. The work function of Pt is 5.0 eV. The doping in GaAs is 1E16/cm3, and Nc=5E17/cm3. i) Draw the thermal equilibrium energy band diagram for the structure ii) Calculate the barrier height and the built-in voltage iii) Calculate the depletion width in GaAs, given ε(total) for GaAs=1E-12 F/cm --> w=sqrt((2*ε*Vbi)/(q*ND)) iv) Calculate the depletion capacitance for 1 cm2 area v)...
Problem 4: Schottky Diode-Small-Signal Capacitance Consider the following reverse-bias capacitanc...
All needed data is given. Please solve the problem ( CLEARLY
)
Problem 4: Schottky Diode-Small-Signal Capacitance Consider the following reverse-bias capacitance data for a Schottky diode (n-type silicon) 41/c 12 106 4 22 VA (volts) Given the Area-1.5 X 10-3 cm2, find Vbi, No, DBN and the ideal metal work function.
Problem 4: Schottky Diode-Small-Signal Capacitance Consider the following reverse-bias capacitance data for a Schottky diode (n-type silicon) 41/c 12 106 4 22 VA (volts) Given the Area-1.5 X...
Problem 1: Schottky Diode Small-Signal Capacitance Consider the measured reverse-bias capacitance data in Figure 14.8b of...
Problem 1: Schottky Diode Small-Signal Capacitance Consider the measured reverse-bias capacitance data in Figure 14.8b of Pierret, reproduced below 1/c2 4 103 3. Pp2 -12 10 8 6 4 VA (volts) Illustrate with simple quantitative sketches how the measured curve would change if a) the Schottky barrier Dn decreases to 0.5 eV (but the semiconductor doping concentration remains N-1x1016 em) b) the semiconductor doping concentration Np increases to 1x1017 cm3 (but the Schottky barrier remains 0.8 eV)
Problem 1: Schottky...
5. There is a Au (gold) n-type InP Schottky barrier diode without knowing the doping on...
5. There is a Au (gold) n-type InP Schottky barrier diode without knowing the doping on concentration. From reverse bias Capacitance-Voltage measurement, the following data are obtained. What are the doping concentration and the built-in potential? Hint The capacitance of the Schottky diode is similar to that of p'n junction. e(InP) 8.85 x 1014 F/cm [10 pt 12.4, to C (F/cm) Vr (Volt) 3.60 x 10 -1 2,50 x 10 -3
5. There is a Au (gold) n-type InP Schottky...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole diffusion coefficient is D 12 cm2/s and the minority carrier hole lifetime is po 10-7 s. The cross sectional area is A 10- cm2. Calculate the reverse saturation current and the diode current at a forward-bias voltage of 0.50v A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm", ,...
Problem 7: A silicon diode is asymmetrically doped at ND-10', cm? and N-1016 cm'. (Note that...
Problem 7: A silicon diode is asymmetrically doped at ND-10', cm? and N-1016 cm'. (Note that at N 10" the semiconductor is on the edge of degeneracy, but we can assume that non-degenerate carrier statistics are close enough for this problem.) Answer the following questions assuming room temperature. Assume that the minority electron and hole lifetimes are τ.-, 10's. The lengths of the N and P regions are L = 500 μm and 1. >> x,,x . a) Find the...
3. (40 pts) The capacitance of a silicon pn junction diode with an area 10° cm2 is measured. A pl...
3. (40 pts) The capacitance of a silicon pn junction diode with an area 10° cm2 is measured. A plot of 1/C2 vs. the applied voltage Va is shown. The dashed line is extrapolated, continuing the data with a constant slope. From the junction capacitance formula and the dependence of W on Vbi-VA, one can obtain an equation for 1/C (a) If the diode is a one-sided junction, find the doping density on the low side from the measured (estimate...
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities...
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities: (a) Reverse saturation hole current component (b) Reverse saturation electron current component. (c) Minority carrier concentrations at the edge of the depletion layer, p(0) and pr(0), for a forward voltage of 0.6 V (d) Electron and hole current for the bias condition of (c). (e) Make a rough sketch...
An abrupt junction GaAs diode is doped with acceptors on the P-side at a concentration of...
An abrupt junction GaAs diode is doped with acceptors on the P-side at a concentration of 1016 cm−3 , donors on the N-side at a concentration of 1017 cm−3 and operated at 300 K. The hole recombination time on the N-side 0.2 µs and the electron recombination time on the P-side is 2 µs. The cross sectional area is 10-2 cm2 a) Calculate the reverse saturation current. b) Calculate the contact potential. e) Calculate the bias voltage needed to obtain...
Materials Science/Electronic Circuits
Parts a and b please
Depletion-Layer Analysis for Schottky 4.20 (a) Calculate the small signal capacitance at zero bias and 300 K for an ideal Schottky Diodes barrier [see Eq. (4,16.2)] between platinum (work function 5,3 ev) and silicon doped with Nd 101°cm. The area of the Schottky diode is 10c (b) Calculate the reverse bias at which the capacitance is reduced by 25% from its zero- bias value. (4.16.2)
Depletion-Layer Analysis for Schottky 4.20 (a) Calculate...
All needed data is given. Please solve the problem ( CLEARLY
)
Problem 4: Schottky Diode-Small-Signal Capacitance Consider the following reverse-bias capacitance data for a Schottky diode (n-type silicon) 41/c 12 106 4 22 VA (volts) Given the Area-1.5 X 10-3 cm2, find Vbi, No, DBN and the ideal metal work function.
Problem 4: Schottky Diode-Small-Signal Capacitance Consider the following reverse-bias capacitance data for a Schottky diode (n-type silicon) 41/c 12 106 4 22 VA (volts) Given the Area-1.5 X...
Problem 1: Schottky Diode Small-Signal Capacitance Consider the measured reverse-bias capacitance data in Figure 14.8b of Pierret, reproduced below 1/c2 4 103 3. Pp2 -12 10 8 6 4 VA (volts) Illustrate with simple quantitative sketches how the measured curve would change if a) the Schottky barrier Dn decreases to 0.5 eV (but the semiconductor doping concentration remains N-1x1016 em) b) the semiconductor doping concentration Np increases to 1x1017 cm3 (but the Schottky barrier remains 0.8 eV)
Problem 1: Schottky...
5. There is a Au (gold) n-type InP Schottky barrier diode without knowing the doping on concentration. From reverse bias Capacitance-Voltage measurement, the following data are obtained. What are the doping concentration and the built-in potential? Hint The capacitance of the Schottky diode is similar to that of p'n junction. e(InP) 8.85 x 1014 F/cm [10 pt 12.4, to C (F/cm) Vr (Volt) 3.60 x 10 -1 2,50 x 10 -3
5. There is a Au (gold) n-type InP Schottky...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole diffusion coefficient is D 12 cm2/s and the minority carrier hole lifetime is po 10-7 s. The cross sectional area is A 10- cm2. Calculate the reverse saturation current and the diode current at a forward-bias voltage of 0.50v A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm", ,...
Problem 7: A silicon diode is asymmetrically doped at ND-10', cm? and N-1016 cm'. (Note that at N 10" the semiconductor is on the edge of degeneracy, but we can assume that non-degenerate carrier statistics are close enough for this problem.) Answer the following questions assuming room temperature. Assume that the minority electron and hole lifetimes are τ.-, 10's. The lengths of the N and P regions are L = 500 μm and 1. >> x,,x . a) Find the...
3. (40 pts) The capacitance of a silicon pn junction diode with an area 10° cm2 is measured. A plot of 1/C2 vs. the applied voltage Va is shown. The dashed line is extrapolated, continuing the data with a constant slope. From the junction capacitance formula and the dependence of W on Vbi-VA, one can obtain an equation for 1/C (a) If the diode is a one-sided junction, find the doping density on the low side from the measured (estimate...
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities: (a) Reverse saturation hole current component (b) Reverse saturation electron current component. (c) Minority carrier concentrations at the edge of the depletion layer, p(0) and pr(0), for a forward voltage of 0.6 V (d) Electron and hole current for the bias condition of (c). (e) Make a rough sketch...
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