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Consider a gold-GaAs Schottky diode with a capacitance of 1 pF at -1 V. What is...

  1. Consider a gold-GaAs Schottky diode with a capacitance of 1 pF at -1 V. What is the doping density of the GaAs? Also calculate the depletion layer width at zero bias and the field at the surface of the semiconductor at -10 V bias voltage. The area of the diode is 10-5 cm2.
  2. Design a platinum-silicon diode with a capacitance of 1 pF and a maximum electric field less than 104 V/cm at -10 V bias. Provide a possible doping density and area. Make sure the diode has an area between 10-5 and 10-7 cm2. Is it possible to satisfy all requirements if the doping density equals 1017 cm-3?
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