1. A metal/n-GaAs Schottky Barrier is formed by depositing platinum on n-GaAs. The electron affinity of...
1. A metal/n-GaAs Schottky Barrier is formed by depositing platinum on n-GaAs. The electron affinity of GaAs is 4.0 eV. The work function of Pt is 5.0 eV. The doping in
GaAs is 1E16/cm3, and Nc=5E17/cm3.
i) Draw the thermal equilibrium energy band diagram for the structure
ii) Calculate the barrier height and the built-in voltage
iii) Calculate the depletion width in GaAs, given ε(total) for GaAs=1E-12 F/cm --> w=sqrt((2*ε*Vbi)/(q*ND))
iv) Calculate the depletion capacitance for 1 cm2 area
v) Draw the energy band diagrams under forward bias and reverse bias
3. Now we change the doping of GaAs from n to p. The doping level is again 1E16/cm3. Nv=1.5E19/cm3. I now deposit Al on GaAs instead of Pt. The work function of Al is 4.2 eV. Rework problem (i)-(iv) of problem 1 for these conditions for p-type Schottky barrier device
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1. A metal/n-GaAs Schottky Barrier is formed by depositing
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Hi everyone, I have a problem about semiconductor.
Please help me with it,thanks a lot.
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A common source amplifier circuit based on a single n-channel MOSFET is shown in Figure 4b. Assume that the transconductance gm-60 mS (equivalent to mA/ V) and drain source resistance, os,...
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Hi everyone, I have a problem about semiconductor.
Please help me with it,thanks a lot.
Background:
Question:
Physical Constants: Vacuum permittivity: £o = 8.85 x 10-14 F/cm Planck's constant: h=6.63 x 10-34 J-s Speed of light: c= 3.0 x 100 cm/s Electronic charge: q=1.60 x 10-19 C Electron rest mass: m. = 9.11 x 10-31 kg Boltzmann constant: kb = 1.38 x 10-23 J/K Thermal energy at 300 K: kBT = 0.0259 eV Energy unit conversion: 1eV = 1.60 x...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation and recombination, how they affect the electrical conductivity, and define what is meant by the "intrinsic carrier density", n. [5 marks] Q3. a) b) With the aid of both lattice and energy band diagrams, explain how n-type doping of Si is achieved and state two types of suitable dopant atoms. [7 marks] c) An n-type region on a Si wafer has a donor concentration...
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