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5. There is a Au (gold) n-type InP Schottky barrier diode without knowing the doping on...
Problem 1: Schottky Diode Small-Signal Capacitance Consider the measured reverse-bias capacitance data in Figure 14.8b of...
Problem 1: Schottky Diode Small-Signal Capacitance Consider the measured reverse-bias capacitance data in Figure 14.8b of Pierret, reproduced below 1/c2 4 103 3. Pp2 -12 10 8 6 4 VA (volts) Illustrate with simple quantitative sketches how the measured curve would change if a) the Schottky barrier Dn decreases to 0.5 eV (but the semiconductor doping concentration remains N-1x1016 em) b) the semiconductor doping concentration Np increases to 1x1017 cm3 (but the Schottky barrier remains 0.8 eV)
Problem 1: Schottky...
Consider a gold-GaAs Schottky diode with a capacitance of 1 pF at -1 V. What is...
Consider a gold-GaAs Schottky diode with a capacitance of 1 pF at -1 V. What is the doping density of the GaAs? Also calculate the depletion layer width at zero bias and the field at the surface of the semiconductor at -10 V bias voltage. The area of the diode is 10-5 cm2. Design a platinum-silicon diode with a capacitance of 1 pF and a maximum electric field less than 104 V/cm at -10 V bias. Provide a possible doping...
1. A metal/n-GaAs Schottky Barrier is formed by depositing platinum on n-GaAs. The electron affinity of...
1. A metal/n-GaAs Schottky Barrier is formed by depositing platinum on n-GaAs. The electron affinity of GaAs is 4.0 eV. The work function of Pt is 5.0 eV. The doping in GaAs is 1E16/cm3, and Nc=5E17/cm3. i) Draw the thermal equilibrium energy band diagram for the structure ii) Calculate the barrier height and the built-in voltage iii) Calculate the depletion width in GaAs, given ε(total) for GaAs=1E-12 F/cm --> w=sqrt((2*ε*Vbi)/(q*ND)) iv) Calculate the depletion capacitance for 1 cm2 area v)...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...
THE REVERSE BIAS VOLTAGE APPLIED TO SILICON PN JUNCTION DIODE IS 4V, DOPING CONCENTRATION Na is...
THE REVERSE BIAS VOLTAGE APPLIED TO SILICON PN JUNCTION DIODE IS 4V, DOPING CONCENTRATION Na is 10^17 cm^-3, Nd = 10^16 cm^-3, ni = 1.3 x 10^9 cm^-3, temperature T = 273 k find the width of depletion region with the applied reverse voltage please check your answer that it is correct please it is a humble request
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with elec...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
Please answer question 2 part c 2. The following table is the reverse bias capacitance of...
Please answer question 2 part c
2. The following table is the reverse bias capacitance of a p+-n step junction diode. If the area of the diode is 1 x 10-2cmand the semiconductor is uniformly doped, calculate the following assuming the relative dielectric constant of the semiconductor is Ks = 10, E = 8.854 x 10-14 F/cm, 1pF=10-12F, and the plot of +2 versus V is straight line. Voltage (V) Capacitance (PF) 420 344 298 266 243 5 - (a)...
Please answer all your works correctly. Thanks. Q3) A germanium p-n junction diode is created with...
Please answer all your works
correctly. Thanks.
Q3) A germanium p-n junction diode is created with NA 1016cm3 in p-side and ND 1017cm-3 in the n-side. The intrinsic carrier concentration of Ge at the room temperature is 2 x 1013cm-3. Calculate the built in potential, electric field and potential distribution in the space charge region, and width of the space charge region? (Dielectric coefficient of german iurm is 16, є0-8.85 x 10-14 F/cm). WI
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd ...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Hi everyone, I have a problem about semiconductor. Please help me with it,thanks a lot. Background:...
Hi everyone, I have a problem about semiconductor.
Please help me with it,thanks a lot.
Background:
Question:
Physical Constants: Vacuum permittivity: £o = 8.85 x 10-14 F/cm Planck's constant: h=6.63 x 10-34 J-s Speed of light: c= 3.0 x 100 cm/s Electronic charge: q=1.60 x 10-19 C Electron rest mass: m. = 9.11 x 10-31 kg Boltzmann constant: kb = 1.38 x 10-23 J/K Thermal energy at 300 K: kBT = 0.0259 eV Energy unit conversion: 1eV = 1.60 x...
Problem 1: Schottky Diode Small-Signal Capacitance Consider the measured reverse-bias capacitance data in Figure 14.8b of Pierret, reproduced below 1/c2 4 103 3. Pp2 -12 10 8 6 4 VA (volts) Illustrate with simple quantitative sketches how the measured curve would change if a) the Schottky barrier Dn decreases to 0.5 eV (but the semiconductor doping concentration remains N-1x1016 em) b) the semiconductor doping concentration Np increases to 1x1017 cm3 (but the Schottky barrier remains 0.8 eV)
Problem 1: Schottky...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
Please answer question 2 part c
2. The following table is the reverse bias capacitance of a p+-n step junction diode. If the area of the diode is 1 x 10-2cmand the semiconductor is uniformly doped, calculate the following assuming the relative dielectric constant of the semiconductor is Ks = 10, E = 8.854 x 10-14 F/cm, 1pF=10-12F, and the plot of +2 versus V is straight line. Voltage (V) Capacitance (PF) 420 344 298 266 243 5 - (a)...
Please answer all your works
correctly. Thanks.
Q3) A germanium p-n junction diode is created with NA 1016cm3 in p-side and ND 1017cm-3 in the n-side. The intrinsic carrier concentration of Ge at the room temperature is 2 x 1013cm-3. Calculate the built in potential, electric field and potential distribution in the space charge region, and width of the space charge region? (Dielectric coefficient of german iurm is 16, є0-8.85 x 10-14 F/cm). WI
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Hi everyone, I have a problem about semiconductor.
Please help me with it,thanks a lot.
Background:
Question:
Physical Constants: Vacuum permittivity: £o = 8.85 x 10-14 F/cm Planck's constant: h=6.63 x 10-34 J-s Speed of light: c= 3.0 x 100 cm/s Electronic charge: q=1.60 x 10-19 C Electron rest mass: m. = 9.11 x 10-31 kg Boltzmann constant: kb = 1.38 x 10-23 J/K Thermal energy at 300 K: kBT = 0.0259 eV Energy unit conversion: 1eV = 1.60 x...
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