Question

Q3) A germanium p-n junction diode is created with NA 1016cm3 in p-side and ND 1017cm-3 in the n-side. The intrinsic carrier concentration of Ge at the room temperature is 2 x 1013cm-3. Calculate the built in potential, electric field and potential distribution in the space charge region, and width of the space charge region? (Dielectric coefficient of german iurm is 16, є0-8.85 x 10-14 F/cm). WIPlease answer all your works correctly. Thanks.

0 0
Add a comment Improve this question Transcribed image text
Know the answer?
Add Answer to:
Please answer all your works correctly. Thanks. Q3) A germanium p-n junction diode is created with...
Your Answer:

Post as a guest

Your Name:

What's your source?

Earn Coins

Coins can be redeemed for fabulous gifts.

Not the answer you're looking for? Ask your own homework help question. Our experts will answer your question WITHIN MINUTES for Free.
Similar Homework Help Questions
  • B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type...

    B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type Si Fig. B2 (a). If the dopant concentrations of the n layer and the p-type silicon are 6x101" cm and 8x10 cm respectively, calculate the built-in potential of the p-n junction at room temperature (300 K) 15 (3 marks) (b). Due to overheating of the silicon sample, the diode has an operation temperature of 200 °C and...

  • 1. (2) A Si p-n junction has sides with boron doping at 107 cm and phosphorus...

    1. (2) A Si p-n junction has sides with boron doping at 107 cm and phosphorus doping at 5.0x10^? cm? The junction has a cross-sectional area of 104 cm. It is in equilibrium at a temperature of 300 K. For Si, the intrinsic charge carrier density is 1.5x100 cm and the dielectric constant is 11.8. State the contact potential, the total depletion region width, the depletion region widths on the p-side and n- side, and the peak electric field. What...

  • Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped...

    Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...

  • A p-n junction is created by doping the right side of a piece of silicon with...

    A p-n junction is created by doping the right side of a piece of silicon with 1014 atoms/cm3 of phosphorus and the left side with 1018 atoms/cm3 of boron. Assume that the dopants are fully ionized, and assume the junction is at x = 0 with x+ pointed to the right. a) Plot by hand (roughly to scale) an energy band diagram of the junction and label EGAP, EC, EV, EF and EFi. Using the effective density of states, calculate...

  • A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is...

    A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...

  • 9. An n- type germanium semiconductor sample is brought into contact with a p - type...

    9. An n- type germanium semiconductor sample is brought into contact with a p - type silicon sample. The germanium sample has a carrier concentra- tion of 4.5 x 1016cm-3 and the silicon sample has a carrier concentration of 1.0 × 1016cm-3. At 300K the intrinsic carrier concentration of germanium is 2.4 × 1013cm-3 and its band gap is 0.66 eV. At 300K the intrinsic carrier concentration of silicon is 1.45 × 1010cm-3 and its band gap is 1.12 eV....

  • The question is attached here in the form of an imagecm2] flowing through this diode under...

    The question is attached here in the form of an imagecm2] flowing through this diode under an applied forward bias of V = 0.6 V the edges of the depleion region. diode at room temperature with an applied forward bias of V 0.6 V. forward bias of V = 0.6 V. PROBLEM E1-PHYSICAL ELECTRONICS II Consider a p-n junction similar to the one depicted in the schematic p-n junction below but with NA 10's cm3 and No- 1016 cm3. At...

  • A p-i-n junction has an intrinsic region thickness of 1-um (micrometer) The p side has Na...

    A p-i-n junction has an intrinsic region thickness of 1-um (micrometer) The p side has Na =10^15 and the n side has Nd=10^19. a) Derive the electric field and potential using Poisson's equation. b) Calculate the depletion region width (take into account the 1-um and the depletion region width for a regular pn junction)

  • Consider an abrupt p-n diode - made of an unknown semiconductor - in thermal equilibrium with...

    Consider an abrupt p-n diode - made of an unknown semiconductor - in thermal equilibrium with as many donors in the n-type region as acceptors in the p-type region and a maximum electric field of -13 kV/cm and a total depletion layer width of 1 µm. (assume es/ e0 = 12) a) What is the applied voltage, Va? b) What is the built-in potential of the diode? c) What are the donor density in the n-type region and the acceptor...

  • A pn junction diode is made of a new semiconductor with 10^16cm-3 acceptors in the p...

    A pn junction diode is made of a new semiconductor with 10^16cm-3 acceptors in the p side and 2x10^17cm-3 donors on the n-side. Intrinsic carrier concentration is same as silicon 10^10cm-3 at room temperature. Let's assume that a forward bias voltage is applied in a way that it create following minority carrier concentrations in quasi neutral regions. n(x) =10^4 - 10^14/[10^4(x+xp)-1] (cm-3) where x<xp<0 and p(x) = 500+10^15/[10^4(x+xn)+1] (cm-3) where x>xn>0. x is given in cm scale. Calculate the total...

ADVERTISEMENT
Free Homework Help App
Download From Google Play
Scan Your Homework
to Get Instant Free Answers
Need Online Homework Help?
Ask a Question
Get Answers For Free
Most questions answered within 3 hours.
ADVERTISEMENT
ADVERTISEMENT
ADVERTISEMENT