Question

The question is attached here in the form of an imagecm2] flowing through this diode under an applied forward bias of V = 0.6 V the edges of the depleion region. diode at room temperature with an applied forward bias of V 0.6 V. forward bias of V = 0.6 V.

PROBLEM E1-PHYSICAL ELECTRONICS II Consider a p-n junction similar to the one depicted in the schematic p-n junction below but with NA 10's cm3 and No- 1016 cm3. At room temperature a) calculate the built-in potential of this junction in IV). b) calculate the extend of the depletion region Xp on the p side in Inm c) calculate the extend of the depletion region Xo on the n side in [um d) calculate the magnitude of the electric field at the metallurgical junction in [V/cm]. The metallurgical e) Calculate the potential difference ? in [V] between the n-side and the p-side with an app 1 With the same forward bias as above calculat g) For the case of a junction area of 10 um calculate the junction capacitance in [iF] for this b) Calculate the current density J in [A/em2 ] lowing through this diode under an applied junction depth x, is the location where the semiconductor changes from n-type to p-type forward bias of V 0.6 V the edges of the depletion region e the excess minority carrier concentration at diode at room temperature with an applied forward bias of v -06 v forward bias of V 0.6 V Oipole of charge PS junction in From top to carrier

Answer 1