4.15 A PN diode with lengths much larger than the carrier diffusion length such as shown...
solid state electronic devices ch5 pro22 In a simple p-n diode, if the diffusion coefficent for holes is twice than that for the electrons, the minority carrier concentration at n side is twice than that in p side, and the diffusion coefficent for holes is also twice of that for the electrons, calculate the injection efficiency for this diode at x, = 0.
Problem 4: Narrow-Base Diode Consider an ideal pn* step-junction Si diode maintained at 300K with cross-sectional area A = 104cm2. The doping concentration on the p-type side is Na= 1017 cm3 (uncompensated). (The n-type side is degenerately doped.) The electron recombination lifetime in the p-type region is tn = 10-6 s. The width of the quasi-neutral p-type region is 1 um, for VA=0 V. a Is this a narrow-base diode? Justify your answer. b) Calculate the diode saturation current Io....
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, N,-1x1017 ст?, ND-11016 Cm -, The minority carrier lifetimes are τ u-^ 1 μs and τ p-1 μs. The minority carrier diffusion coefficients are Da-25 cm2/s, DR-10 cm2/s. n1-1.5x1010 cm -3 kT - 0.026V Low-level injection is defined to be when the minority carrier concentration at the edge of the space charge region becomes equal to one-tenth the majority carrier concentration. Determine the value of the voltage across...
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p side (see the figure above). b) (5 points) Calculate the...
A pn junction diode is made of a new semiconductor with 10^16cm-3 donors in the n side and 2x10^17cm-3 acceptors on the p-side. Intrinsic carrier concentration is same as silicon 10^10cm-3at room temperature. Let's assume that a forward bias voltage is applied in a way that it create following minority carrier concentrations in quasi neutral regions. p(x) =10^4 + 10^14/[1+10^4(x-xn)] (cm-3) where x>xn>0 and n(x) = 500-10^15/[10^4(x+xp)-1] (cm-3) where x<-xp<0. x is given in cm scale. Calculate the total current...
A pn junction diode is made of a new semiconductor with 10^16cm-3 acceptors in the p side and 2x10^17cm-3 donors on the n-side. Intrinsic carrier concentration is same as silicon 10^10cm-3 at room temperature. Let's assume that a forward bias voltage is applied in a way that it create following minority carrier concentrations in quasi neutral regions. n(x) =10^4 - 10^14/[10^4(x+xp)-1] (cm-3) where x<xp<0 and p(x) = 500+10^15/[10^4(x+xn)+1] (cm-3) where x>xn>0. x is given in cm scale. Calculate the total...
An important application of PN diodes is their use as photodetectors. The optical radiation creates electron-hole pairs in the depletion region and regions within the diffusion lengths near the depletion edges. These e-h pairs are collected as a photocurrent. The e-h pairs are generated at the rate GL 1022 cm-3s1. Calculate the photocurrent. Consider a silicon PN diode at 300K with following parameters Equation for photocurrent calculation: AGL (W Ln Lp) A 104 um2 Na = 2 x 1016 cm-3...
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minority carrier diffusion coefficients are D 25 cm/s, Da- 10 cm2/s n,1.5x1010 cm3 kT 0.0267 Depletion region p-type n-type a) (5 points) Calculate the excess electron concentration as a function of x in the p-side (see the figure above) b) (10 points) Calculate the...