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solid state electronic devices ch5 pro22
In a simple p-n diode, if the diffusion coefficent for...
A pn junction diode is made of a new semiconductor with 10^16cm-3 acceptors in the p...
A pn junction diode is made of a new semiconductor with 10^16cm-3 acceptors in the p side and 2x10^17cm-3 donors on the n-side. Intrinsic carrier concentration is same as silicon 10^10cm-3 at room temperature. Let's assume that a forward bias voltage is applied in a way that it create following minority carrier concentrations in quasi neutral regions. n(x) =10^4 - 10^14/[10^4(x+xp)-1] (cm-3) where x<xp<0 and p(x) = 500+10^15/[10^4(x+xn)+1] (cm-3) where x>xn>0. x is given in cm scale. Calculate the total...
A pn junction diode is made of a new semiconductor with 10^16cm-3 donors in the n...
A pn junction diode is made of a new semiconductor with 10^16cm-3 donors in the n side and 2x10^17cm-3 acceptors on the p-side. Intrinsic carrier concentration is same as silicon 10^10cm-3at room temperature. Let's assume that a forward bias voltage is applied in a way that it create following minority carrier concentrations in quasi neutral regions. p(x) =10^4 + 10^14/[1+10^4(x-xn)] (cm-3) where x>xn>0 and n(x) = 500-10^15/[10^4(x+xp)-1] (cm-3) where x<-xp<0. x is given in cm scale. Calculate the total current...
This is for solid state electronics: Problem 4: Excess electrons and holes are generated at the...
This is for solid state electronics: Problem 4: Excess electrons and holes are generated at the end of a Si bar (at x=0). The Si is homogeneously doped with P atoms to a concentration of 1017 cm-3. The minority carrier lifetime = 1 μs. The electron diffusion coefficient = 25 cm2/s The hole diffusion coefficient = 10 cm2/s The excess electron and hole concentrations at x=0 are equal to each other and are 1015 cm-3. (a) Write the formula (with...
N P n=10 p=109 1013 4.32P) The figure shows carrier densities of a Si PN junction...
N P n=10 p=109 1013 4.32P) The figure shows carrier densities of a Si PN junction diode. Before solution choose suitable positive integer values of a and b (a>b) and show this numbers clearly in a box. a) Write the bias type and explain your reason. Calculate the bias voltage. (n=101) b) What are the equilibrium values of minority carriers? c) Calculate the hole concentration on the N side at x=0. d) Diffusion constants of electron and holes has Dn=cDp...
(b) A structure that we sometimes encounter in electronic devices is a so-called p-i-n structure, consisting...
(b) A structure that we sometimes encounter in electronic devices is a so-called p-i-n structure, consisting of a p-doped layer, an intrinsic layer and then an n-doped layer as shown in the drawing below. Assume Si as the semiconductor: n Pis. Intrinsic 5 X IOC kx10 can player Intrinsic layer n layer Majority carrier concentration Minority carrier concentration Electrical Conductivity
23 20 at 9pm structions questions. When you finish the frst question please click on NEXT...
23 20 at 9pm structions questions. When you finish the frst question please click on NEXT to go to the second question. ME BACK. Do not click"next" button before finishing your first question. DO NOT click on SUBMI questions. Question 2 60 pts A pn junction diode is made of a new semiconductor with 1016cm3 acceptors in the p side and 2x1017cm3 donors on the n-side. Intrinsic carrier concentration is same as silicon 1010cm3 at room temperature. Let's assume that...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
4.15 A PN diode with lengths much larger than the carrier diffusion length such as shown...
4.15 A PN diode with lengths much larger than the carrier diffusion length such as shown in Fig. 4-18 is called a long-base diode. A short-base diode has lengths much shorter than the diffusion lengths, and its excess carrier concentration is similar to that shown in Fig. 8-6. A uniformly doped short-base Si diode has Nd- 101cm-3and Na 1016cm3. tp n1 us, Dp 10 cms, Dn 30 cm-s, and cross-sectional area10 cm. The length of the quasi-neutral N-type and P-type...
(b) A structure that we sometimes encounter in electronic devices is a so-called p-i-n structure, consisting...
(b) A structure that we sometimes encounter in electronic devices is a so-called p-i-n structure, consisting of a p-doped layer, an intrinsic layer and then an n-doped layer as shown in the drawing below. Assume Si as the semiconductor: Ps. Intrinsic n kx10cn' 5XIOCA p layer Intrinsic layer n layer Majority carrier concentration Minority carrier concentration Electrical Conductivity
N P n=10 p=109 1013 4.32P) The figure shows carrier densities of a Si PN junction diode. Before solution choose suitable positive integer values of a and b (a>b) and show this numbers clearly in a box. a) Write the bias type and explain your reason. Calculate the bias voltage. (n=101) b) What are the equilibrium values of minority carriers? c) Calculate the hole concentration on the N side at x=0. d) Diffusion constants of electron and holes has Dn=cDp...
(b) A structure that we sometimes encounter in electronic devices is a so-called p-i-n structure, consisting of a p-doped layer, an intrinsic layer and then an n-doped layer as shown in the drawing below. Assume Si as the semiconductor: n Pis. Intrinsic 5 X IOC kx10 can player Intrinsic layer n layer Majority carrier concentration Minority carrier concentration Electrical Conductivity
23 20 at 9pm structions questions. When you finish the frst question please click on NEXT to go to the second question. ME BACK. Do not click"next" button before finishing your first question. DO NOT click on SUBMI questions. Question 2 60 pts A pn junction diode is made of a new semiconductor with 1016cm3 acceptors in the p side and 2x1017cm3 donors on the n-side. Intrinsic carrier concentration is same as silicon 1010cm3 at room temperature. Let's assume that...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
4.15 A PN diode with lengths much larger than the carrier diffusion length such as shown in Fig. 4-18 is called a long-base diode. A short-base diode has lengths much shorter than the diffusion lengths, and its excess carrier concentration is similar to that shown in Fig. 8-6. A uniformly doped short-base Si diode has Nd- 101cm-3and Na 1016cm3. tp n1 us, Dp 10 cms, Dn 30 cm-s, and cross-sectional area10 cm. The length of the quasi-neutral N-type and P-type...
(b) A structure that we sometimes encounter in electronic devices is a so-called p-i-n structure, consisting of a p-doped layer, an intrinsic layer and then an n-doped layer as shown in the drawing below. Assume Si as the semiconductor: Ps. Intrinsic n kx10cn' 5XIOCA p layer Intrinsic layer n layer Majority carrier concentration Minority carrier concentration Electrical Conductivity
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