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(b) A structure that we sometimes encounter in electronic devices is a so-called p-i-n structure, consisting of a p-doped lay

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Souton for First of know we Silicon, (15x10 xrorog and law. mass action we should know the tei np = (nie) mp = (1.500 nps (2.for intrinsic layer in: p = na) n. =(1-5x10 oto) (1.5 mood (cm3 and Majority : minority Conductivity given by a(den of elp) n

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