1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin...

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1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole di

A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm, , D,-49 cm?/s. D.-100 cm2 /s, τ.. τ

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Answer 1

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ho t 니 Phe Ng ID No 31.43 x 10 A e_ 14x16 IO 640 x 10 22 36x 16 S, = 2.03 x 10 bia) 2.03 x 10 i6 x 16 ΧΙΟ 41-131 x 10 2-937 x Io A : 2.9 31x10) / 2.99 x 10

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1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin...

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1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin...

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