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Question 2 (5 marks) a) State the ideal-diode equation. b) Forward-bias-voltage of V, 0.625 V...
A silicon pn junction at T = 300 K has the following parameters: Na-5 1016 cm-?,...
A silicon pn junction at T = 300 K has the following parameters: Na-5 1016 cm-?, N,-1 1016 cm-3, D.-25 cm3/s, D.-10 cm2/s, ?,0-5 x 10-7 s, and To 1 X 10-7 s. The cross-sectional area is A 10-3 cm2 and the forward- bias voltage is V,-0.625 V. Calculate the (a) minority electron diffusion cur- rent at the space charge edge, (b) minority hole diffusion current at the space charge edge, and (c) total current in the pn junction diode.
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd ...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Q3 Consider a GaAs pn junction with doping concentrations Na5 x 106 cm-3 and N1016 cm-3....
Q3 Consider a GaAs pn junction with doping concentrations Na5 x 106 cm-3 and N1016 cm-3. The junction cross-sectional area is A 103 cm2 and the applied forward-bias voltage is Va 1.10 V. Calculate the (a) minority electron diffusion cur rent at the edge of the space charge region, (b) minority hole diffusion current at the edge of the space charge region, and (c) total current in the pn junction diode.
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minor...
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minority carrier diffusion coefficients are D 25 cm/s, Da- 10 cm2/s n,1.5x1010 cm3 kT 0.0267 Depletion region p-type n-type a) (5 points) Calculate the excess electron concentration as a function of x in the p-side (see the figure above) b) (10 points) Calculate the...
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in...
XXX is 467
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in the n-side N, = 5x1015 cm3 and the acceptor impurity concentration in the p-side N, = XXX × 1015/cm3 Assume that the diode area A-2x10-3 cm2 and 100cm work Note that the values obtained in the calculations may not be realistic as the Matric # varies greatly. The assignment is only to test your understanding, and must be handwritten Determine the...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole diffusion coefficient is D 12 cm2/s and the minority carrier hole lifetime is po 10-7 s. The cross sectional area is A 10- cm2. Calculate the reverse saturation current and the diode current at a forward-bias voltage of 0.50v A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm", ,...
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, N,-1x1017 ст?, ND-11016 Cm -, The minority carrier lifetimes are τ u-^ 1 μs and τ p-1 μs. The minority carrier diffusion coefficients...
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, N,-1x1017 ст?, ND-11016 Cm -, The minority carrier lifetimes are τ u-^ 1 μs and τ p-1 μs. The minority carrier diffusion coefficients are Da-25 cm2/s, DR-10 cm2/s. n1-1.5x1010 cm -3 kT - 0.026V Low-level injection is defined to be when the minority carrier concentration at the edge of the space charge region becomes equal to one-tenth the majority carrier concentration. Determine the value of the voltage across...
Please answer and show all your work. Thank you! 6- A silicon pnp transistor has impurity...
Please answer and show all your work. Thank you!
6- A silicon pnp transistor has impurity concentrations of 5 x 1018 cm3, 7 x 1016 cm-3, and 2 × 1016 cm-3 in the emitter, base and collector, respectively. The base width is 1.0 ?m, and the device cross-sectional area is 0.2 mm2. When the emitter-base junction is forward biased to 0.5 V and the base-collector junction is reverse biased to 5 V, calculate the neutral base width and the minority...
An important application of PN diodes is their use as photodetectors. The optical radiation creates electron-hole...
An important application of PN diodes is their use as photodetectors. The optical radiation creates electron-hole pairs in the depletion region and regions within the diffusion lengths near the depletion edges. These e-h pairs are collected as a photocurrent. The e-h pairs are generated at the rate GL 1022 cm-3s1. Calculate the photocurrent. Consider a silicon PN diode at 300K with following parameters Equation for photocurrent calculation: AGL (W Ln Lp) A 104 um2 Na = 2 x 1016 cm-3...
Problem 4 (25 points) Consider a silicon pn junction at T 300 K, NA ND-1x1016 cm3....
Problem 4 (25 points) Consider a silicon pn junction at T 300 K, NA ND-1x1016 cm3. The minority carrier lifetimes are τ -0.01 μs and τΡ 0.01 μ. The Junction is forwardbiased with , V,-0.6V. The minority carrier diffusion coefficients are D,-20 cm2/s, D,-10 cm2/s. n, = 1.5x 1010cm -3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p side (see the figure above). b) (5 points) Calculate the...
A silicon pn junction at T = 300 K has the following parameters: Na-5 1016 cm-?, N,-1 1016 cm-3, D.-25 cm3/s, D.-10 cm2/s, ?,0-5 x 10-7 s, and To 1 X 10-7 s. The cross-sectional area is A 10-3 cm2 and the forward- bias voltage is V,-0.625 V. Calculate the (a) minority electron diffusion cur- rent at the space charge edge, (b) minority hole diffusion current at the space charge edge, and (c) total current in the pn junction diode.
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Q3 Consider a GaAs pn junction with doping concentrations Na5 x 106 cm-3 and N1016 cm-3. The junction cross-sectional area is A 103 cm2 and the applied forward-bias voltage is Va 1.10 V. Calculate the (a) minority electron diffusion cur rent at the edge of the space charge region, (b) minority hole diffusion current at the edge of the space charge region, and (c) total current in the pn junction diode.
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minority carrier diffusion coefficients are D 25 cm/s, Da- 10 cm2/s n,1.5x1010 cm3 kT 0.0267 Depletion region p-type n-type a) (5 points) Calculate the excess electron concentration as a function of x in the p-side (see the figure above) b) (10 points) Calculate the...
XXX is 467
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in the n-side N, = 5x1015 cm3 and the acceptor impurity concentration in the p-side N, = XXX × 1015/cm3 Assume that the diode area A-2x10-3 cm2 and 100cm work Note that the values obtained in the calculations may not be realistic as the Matric # varies greatly. The assignment is only to test your understanding, and must be handwritten Determine the...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole diffusion coefficient is D 12 cm2/s and the minority carrier hole lifetime is po 10-7 s. The cross sectional area is A 10- cm2. Calculate the reverse saturation current and the diode current at a forward-bias voltage of 0.50v A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm", ,...
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, N,-1x1017 ст?, ND-11016 Cm -, The minority carrier lifetimes are τ u-^ 1 μs and τ p-1 μs. The minority carrier diffusion coefficients are Da-25 cm2/s, DR-10 cm2/s. n1-1.5x1010 cm -3 kT - 0.026V Low-level injection is defined to be when the minority carrier concentration at the edge of the space charge region becomes equal to one-tenth the majority carrier concentration. Determine the value of the voltage across...
Please answer and show all your work. Thank you!
6- A silicon pnp transistor has impurity concentrations of 5 x 1018 cm3, 7 x 1016 cm-3, and 2 × 1016 cm-3 in the emitter, base and collector, respectively. The base width is 1.0 ?m, and the device cross-sectional area is 0.2 mm2. When the emitter-base junction is forward biased to 0.5 V and the base-collector junction is reverse biased to 5 V, calculate the neutral base width and the minority...
An important application of PN diodes is their use as photodetectors. The optical radiation creates electron-hole pairs in the depletion region and regions within the diffusion lengths near the depletion edges. These e-h pairs are collected as a photocurrent. The e-h pairs are generated at the rate GL 1022 cm-3s1. Calculate the photocurrent. Consider a silicon PN diode at 300K with following parameters Equation for photocurrent calculation: AGL (W Ln Lp) A 104 um2 Na = 2 x 1016 cm-3...
Problem 4 (25 points) Consider a silicon pn junction at T 300 K, NA ND-1x1016 cm3. The minority carrier lifetimes are τ -0.01 μs and τΡ 0.01 μ. The Junction is forwardbiased with , V,-0.6V. The minority carrier diffusion coefficients are D,-20 cm2/s, D,-10 cm2/s. n, = 1.5x 1010cm -3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p side (see the figure above). b) (5 points) Calculate the...
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