Question

6- A silicon pnp transistor has impurity concentrations of 5 x 1018 cm3, 7 x 1016 cm-3, and 2 × 1016 cm-3 in the emitter, base and collector, respectively. The base width is 1.0 ?m, and the device cross-sectional area is 0.2 mm2. When the emitter-base junction is forward biased to 0.5 V and the base-collector junction is reverse biased to 5 V, calculate the neutral base width and the minority carrier concentration at the emitter-base junction. The diffusion constants of the minority carriers in the emitter, base, and collector are 50 cm2/s, 41 cm%, and 116 cm2/s respectively, and the corresponding lifetimes are 10-8s, 10-7s, and 10-bs. Find the current components/Ep, ???,?En, ???, and?BB. Emitter (p) Base (n) Collector (p)

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Answer #1

ROBLEM 6:- 3 Bax widthWe - IHnm 2 12とmitta base junction 2 (9.65o) basei NE+NB emitue Lau junten bi - VeB) 1g 오X 1.075x10 (o.428-4-5)2. = 0.0259 2 IG 2XIo 1-6xlo8 89x lo 15.5xlo 2 2 6. 5 l6 o CmDitbtumon Condans てB l o 2. 1. 65 x lo NEBase en 2. ho NB 1x to 16 3 1330 . 3 cm no Leru - Le - lo-7 x163cmh2 2. し9.65 xto 2xlo 16 o-9 o-025q EP er erVeB 2 4 En - 19 3 Ге ep

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