Problem 2. A silicon NPN bipolar transistor has the following specifications: Emitter: N+: ND =1018 cm-3...
Problem 2. A silicon NPN bipolar transistor has the following specifications: Emitter: N+: ND =1018 cm-3 , base: p-type, NA=1015 cm-3, collector: N-type, ND=5x1015 cm-3 .
1. Draw the energy band diagram of the transistor at thermal equilibrium,
2. If the transistor is biased at Normal Active Mode, emitter-base junction forward biased with 1 V, and collector-base junction is reverse biased with 4V, draw the energy band diagram.
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Problem 2. A silicon NPN bipolar transistor has the following
specifications: Emitter: N+: ND =1018 cm-3...
Consider a silicon device (which happens to be an npn bipolar transistor) with an emitter doping...
Consider a silicon device (which happens to be an npn bipolar transistor) with an emitter doping of 10^17/cm3, a base doping of 8x10^15/cm3 and a collector doping of 2x10^15/cm3. Carefully calculate how the band diagram, charge density, electric field and electrostatic potential as a function of distance for this device changes from the equilibrium case when this bipolar transistor is properly biased to work as an amplifier. In other words, show how the band diagram changes when the emitter-base junction...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region wi...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...
question 3 and 4 Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics...
question 3 and 4
Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics Base Collector Emitter Na-5x 1016 cm3 Ng- 1015 cm3 N1018 cm3 DC- 12 cm-/sec DE 8 cm-/sec (diff coef.) DB 15 cm-/sec sec TEO 108 sec (life time) tB0 5x 10 tCo 10 sec xp 0.7 um (Base width) xg 0.8 um (emitter width) D Remember D/u= KT /q, and L n.p n.p A forward bias of 0.5 V is applied to the emitter-base...
8.3 Consider a conventional NPN BJT with uniform doping. The base-emitter junction is forward biased, and...
8.3 Consider a conventional NPN BJT with uniform doping. The base-emitter junction is forward biased, and the base-collector junction is reverse biased. (a) Qualitatively sketch the energy band diagram. (b) Sketch the minority carrier concentrations in the base, emitter, and collector regions. (c) List all the causes contributing to the base and collector currents. You may neglect thermal recombination-generation currents in the depletion regions.
2. Design the doping levels and dimensions of a silicon npn bipolar transistor such that the...
2. Design the doping levels and dimensions of a silicon npn bipolar transistor such that the dc current gain is 320 and the Gummel Number is 10' cm². Assume that tm = 10-'s in the base, T, = 10-8 s in the emitter and T, = 10-s in the collector. Answer: xp = 500 nm, NB = 2x10 cm-> and xp = 1 um, Nae = 5.5x10 cm -3
Please answer and show all your work. Thank you! 6- A silicon pnp transistor has impurity...
Please answer and show all your work. Thank you!
6- A silicon pnp transistor has impurity concentrations of 5 x 1018 cm3, 7 x 1016 cm-3, and 2 × 1016 cm-3 in the emitter, base and collector, respectively. The base width is 1.0 ?m, and the device cross-sectional area is 0.2 mm2. When the emitter-base junction is forward biased to 0.5 V and the base-collector junction is reverse biased to 5 V, calculate the neutral base width and the minority...
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base...
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base current gain, α 0.95. The input emitter current is IE-4.6 mA. a) Calculate the collector current Ic b) Calculate the common-emitter current gain, B c) Calculate the base current IB IB
2. A silicon n'-p-n bipolar transistor has abrupt dopings of 1019, 3x1016, and 5x105 cm in...
2. A silicon n'-p-n bipolar transistor has abrupt dopings of 1019, 3x1016, and 5x105 cm in the emitter, base, and collector, respectively. Find the upper limit of the base-collector voltage at which the emitter bias can no longer control the collector current (due to punch- through or avalanche breakdown). Assume the base width (between metallurgical junc- tions) is 0.5 um.
A Si p-n-p transistor has impurity concentrations of6*1018, 7 1015 and 9*1017 cm3 in the emitter, base and collector regions correspondingly. The corresponding carrier lifetimes are 10 10-7, and...
A Si p-n-p transistor has impurity concentrations of6*1018, 7 1015 and 9*1017 cm3 in the emitter, base and collector regions correspondingly. The corresponding carrier lifetimes are 10 10-7, and 106 s. The device cross-section area A-0.02 mm2, the emitter base junction is forward biased to 0.7V. Use diffusion coefficients DE-3cm2/s, DB-15 cm2/s, Dc-5cm%, and base with w=0.65 (a) Calculate emitter current using iEp.n-qADpPn p exp( )1 (b) Calculate current gain: (c) Estimate the device switching time (RC) assuming that resistance...
1. In the semiconductor materials fabrication process, Antimony material is injected into the silicon wafer. Name...
1. In the semiconductor materials fabrication process, Antimony material is injected into the silicon wafer. Name the type of semiconductor product and explain the mechanism involved with the schematic diagrams. 2. Describe the formation of the depletion region and the potential barrier of the PN junction (a) without bias (b) forward bias and (c) reversed bias. 3.Explain on the cause and origin of the high reverse bias current after breakdown of a PN junction. 4.In bipolar Junction transistor, (a) Why...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...
question 3 and 4
Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics Base Collector Emitter Na-5x 1016 cm3 Ng- 1015 cm3 N1018 cm3 DC- 12 cm-/sec DE 8 cm-/sec (diff coef.) DB 15 cm-/sec sec TEO 108 sec (life time) tB0 5x 10 tCo 10 sec xp 0.7 um (Base width) xg 0.8 um (emitter width) D Remember D/u= KT /q, and L n.p n.p A forward bias of 0.5 V is applied to the emitter-base...
8.3 Consider a conventional NPN BJT with uniform doping. The base-emitter junction is forward biased, and the base-collector junction is reverse biased. (a) Qualitatively sketch the energy band diagram. (b) Sketch the minority carrier concentrations in the base, emitter, and collector regions. (c) List all the causes contributing to the base and collector currents. You may neglect thermal recombination-generation currents in the depletion regions.
2. Design the doping levels and dimensions of a silicon npn bipolar transistor such that the dc current gain is 320 and the Gummel Number is 10' cm². Assume that tm = 10-'s in the base, T, = 10-8 s in the emitter and T, = 10-s in the collector. Answer: xp = 500 nm, NB = 2x10 cm-> and xp = 1 um, Nae = 5.5x10 cm -3
Please answer and show all your work. Thank you!
6- A silicon pnp transistor has impurity concentrations of 5 x 1018 cm3, 7 x 1016 cm-3, and 2 × 1016 cm-3 in the emitter, base and collector, respectively. The base width is 1.0 ?m, and the device cross-sectional area is 0.2 mm2. When the emitter-base junction is forward biased to 0.5 V and the base-collector junction is reverse biased to 5 V, calculate the neutral base width and the minority...
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base current gain, α 0.95. The input emitter current is IE-4.6 mA. a) Calculate the collector current Ic b) Calculate the common-emitter current gain, B c) Calculate the base current IB IB
2. A silicon n'-p-n bipolar transistor has abrupt dopings of 1019, 3x1016, and 5x105 cm in the emitter, base, and collector, respectively. Find the upper limit of the base-collector voltage at which the emitter bias can no longer control the collector current (due to punch- through or avalanche breakdown). Assume the base width (between metallurgical junc- tions) is 0.5 um.
A Si p-n-p transistor has impurity concentrations of6*1018, 7 1015 and 9*1017 cm3 in the emitter, base and collector regions correspondingly. The corresponding carrier lifetimes are 10 10-7, and 106 s. The device cross-section area A-0.02 mm2, the emitter base junction is forward biased to 0.7V. Use diffusion coefficients DE-3cm2/s, DB-15 cm2/s, Dc-5cm%, and base with w=0.65 (a) Calculate emitter current using iEp.n-qADpPn p exp( )1 (b) Calculate current gain: (c) Estimate the device switching time (RC) assuming that resistance...
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