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2. Design the doping levels and dimensions of a silicon npn bipolar transistor such that the...
Consider a silicon device (which happens to be an npn bipolar transistor) with an emitter doping...
Consider a silicon device (which happens to be an npn bipolar transistor) with an emitter doping of 10^17/cm3, a base doping of 8x10^15/cm3 and a collector doping of 2x10^15/cm3. Carefully calculate how the band diagram, charge density, electric field and electrostatic potential as a function of distance for this device changes from the equilibrium case when this bipolar transistor is properly biased to work as an amplifier. In other words, show how the band diagram changes when the emitter-base junction...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region wi...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...
question 3 and 4 Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics...
question 3 and 4
Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics Base Collector Emitter Na-5x 1016 cm3 Ng- 1015 cm3 N1018 cm3 DC- 12 cm-/sec DE 8 cm-/sec (diff coef.) DB 15 cm-/sec sec TEO 108 sec (life time) tB0 5x 10 tCo 10 sec xp 0.7 um (Base width) xg 0.8 um (emitter width) D Remember D/u= KT /q, and L n.p n.p A forward bias of 0.5 V is applied to the emitter-base...
Problem 2. A silicon NPN bipolar transistor has the following specifications: Emitter: N+: ND =1018 cm-3...
Problem 2. A silicon NPN bipolar transistor has the following specifications: Emitter: N+: ND =1018 cm-3 , base: p-type, NA=1015 cm-3, collector: N-type, ND=5x1015 cm-3 . 1. Draw the energy band diagram of the transistor at thermal equilibrium, 2. If the transistor is biased at Normal Active Mode, emitter-base junction forward biased with 1 V, and collector-base junction is reverse biased with 4V, draw the energy band diagram.
2. A silicon n'-p-n bipolar transistor has abrupt dopings of 1019, 3x1016, and 5x105 cm in...
2. A silicon n'-p-n bipolar transistor has abrupt dopings of 1019, 3x1016, and 5x105 cm in the emitter, base, and collector, respectively. Find the upper limit of the base-collector voltage at which the emitter bias can no longer control the collector current (due to punch- through or avalanche breakdown). Assume the base width (between metallurgical junc- tions) is 0.5 um.
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base...
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base current gain, α 0.95. The input emitter current is IE-4.6 mA. a) Calculate the collector current Ic b) Calculate the common-emitter current gain, B c) Calculate the base current IB IB
A. As an electronic device, what is the function or purpose of a bipolar junction transistor when...
A. As an electronic device, what is the function or purpose of a bipolar junction transistor when it is utilized in an analog circuit? B. Make a sketch of a typical volume element of a silicon pnp transistor connected in active larger than the base current. In your sketch, show the path of carriers (both holes and electrons) as they proceed from the emitter to the collector. Identify the paths of all 3 types of base current and explain what...
A uniformly doped silicon pnp transistor with base width of 2um is biased in forward active mode (with BC junction reverse biased). The doping concentrations are NE-1018cm NB-5x1016cm3, and Nc-1015cm...
A uniformly doped silicon pnp transistor with base width of 2um is biased in forward active mode (with BC junction reverse biased). The doping concentrations are NE-1018cm NB-5x1016cm3, and Nc-1015cm3. Assume DB-25 cm2/s, TB-10-s and LB 16um (a) Calculate the values of no, рво, and nco. (b) For VEB 0.65V, determine the respective minority carrier concentration at the edge of the depletion layer, pa(0) and ne(0) (c) Sketch the minority carrier concentration through the device and label each curve (d)...
im currently doing an assignment where i must design a two stage bipolar transistor, i just...
im currently doing an assignment where i must design a two stage
bipolar transistor, i just need the calculations and values for
each component and then i can run simulated experiments and
complete my work
here is the schematic
the transistor used is the BC846B
the supply voltage is 15 v
the collector currents 1 (ICq1) = 1.5mA
the collector current 2 (ICq2) = 7.5 mA
output voltage swing= max
frequency response = 50- 20 khz
i must calculate the...
Download the datasheet for 2N3904 and find the value of Bp. (Hint: Use average value) Be=...
Download the datasheet for 2N3904 and find the value of Bp. (Hint: Use average value) Be= Voc +10 V RB We are going to consider the common emitter configuration circuit shown in the figure to test a 2N3904 npn Bipolar Junction Transistor (BJT) under DC bias conditions. Your circuit should place a fixed collector resistor, Rc, in the circuit to prevent the collector current, Ic, from exceeding 40 mA (for this, you know that the minimum value of is zero)....
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...
question 3 and 4
Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics Base Collector Emitter Na-5x 1016 cm3 Ng- 1015 cm3 N1018 cm3 DC- 12 cm-/sec DE 8 cm-/sec (diff coef.) DB 15 cm-/sec sec TEO 108 sec (life time) tB0 5x 10 tCo 10 sec xp 0.7 um (Base width) xg 0.8 um (emitter width) D Remember D/u= KT /q, and L n.p n.p A forward bias of 0.5 V is applied to the emitter-base...
2. A silicon n'-p-n bipolar transistor has abrupt dopings of 1019, 3x1016, and 5x105 cm in the emitter, base, and collector, respectively. Find the upper limit of the base-collector voltage at which the emitter bias can no longer control the collector current (due to punch- through or avalanche breakdown). Assume the base width (between metallurgical junc- tions) is 0.5 um.
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base current gain, α 0.95. The input emitter current is IE-4.6 mA. a) Calculate the collector current Ic b) Calculate the common-emitter current gain, B c) Calculate the base current IB IB
A. As an electronic device, what is the function or purpose of a bipolar junction transistor when it is utilized in an analog circuit? B. Make a sketch of a typical volume element of a silicon pnp transistor connected in active larger than the base current. In your sketch, show the path of carriers (both holes and electrons) as they proceed from the emitter to the collector. Identify the paths of all 3 types of base current and explain what...
A uniformly doped silicon pnp transistor with base width of 2um is biased in forward active mode (with BC junction reverse biased). The doping concentrations are NE-1018cm NB-5x1016cm3, and Nc-1015cm3. Assume DB-25 cm2/s, TB-10-s and LB 16um (a) Calculate the values of no, рво, and nco. (b) For VEB 0.65V, determine the respective minority carrier concentration at the edge of the depletion layer, pa(0) and ne(0) (c) Sketch the minority carrier concentration through the device and label each curve (d)...
im currently doing an assignment where i must design a two stage
bipolar transistor, i just need the calculations and values for
each component and then i can run simulated experiments and
complete my work
here is the schematic
the transistor used is the BC846B
the supply voltage is 15 v
the collector currents 1 (ICq1) = 1.5mA
the collector current 2 (ICq2) = 7.5 mA
output voltage swing= max
frequency response = 50- 20 khz
i must calculate the...
Download the datasheet for 2N3904 and find the value of Bp. (Hint: Use average value) Be= Voc +10 V RB We are going to consider the common emitter configuration circuit shown in the figure to test a 2N3904 npn Bipolar Junction Transistor (BJT) under DC bias conditions. Your circuit should place a fixed collector resistor, Rc, in the circuit to prevent the collector current, Ic, from exceeding 40 mA (for this, you know that the minimum value of is zero)....
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