5. Design a common emitter amplifier with degeneration so that its unloaded gain is 10 and it is Estimate Rin for ths aplfer preppeu Se1, Nalect copdfors tem
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A. As an electronic device, what is the function or purpose of a bipolar junction transistor when...
Consider a silicon device (which happens to be an npn bipolar transistor) with an emitter doping...
Consider a silicon device (which happens to be an npn bipolar transistor) with an emitter doping of 10^17/cm3, a base doping of 8x10^15/cm3 and a collector doping of 2x10^15/cm3. Carefully calculate how the band diagram, charge density, electric field and electrostatic potential as a function of distance for this device changes from the equilibrium case when this bipolar transistor is properly biased to work as an amplifier. In other words, show how the band diagram changes when the emitter-base junction...
These are the four modes for the bipolar junction transistors (PNP type). FOR THE ACTIVE CASE:...
These are the four modes for the bipolar junction transistors
(PNP type).
FOR THE ACTIVE CASE: I am having trouble understanding why the
minority carriers (electrons) increase in the emitter region as you
approach the depletion region. Similarly, why is there so much
minority carriers in the base (and why does it decrease as it
approaches the base collector junction). Also why are the minority
carriers (n) in the collector region initially very low, the
increases?
Can you explain how...
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base...
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base current gain, α 0.95. The input emitter current is IE-4.6 mA. a) Calculate the collector current Ic b) Calculate the common-emitter current gain, B c) Calculate the base current IB IB
Please answer and show all your work. Thank you! 6- A silicon pnp transistor has impurity...
Please answer and show all your work. Thank you!
6- A silicon pnp transistor has impurity concentrations of 5 x 1018 cm3, 7 x 1016 cm-3, and 2 × 1016 cm-3 in the emitter, base and collector, respectively. The base width is 1.0 ?m, and the device cross-sectional area is 0.2 mm2. When the emitter-base junction is forward biased to 0.5 V and the base-collector junction is reverse biased to 5 V, calculate the neutral base width and the minority...
HELP with finding 8 and 9 2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (k...
HELP with finding 8 and 9
2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (kT/q) In(Ic/Is), in which Is is the saturation current of the emitter-base junction (a) (3 pts) Choose any statement below that correctly describe the effect of temperature on the property of the BIT under a constant 1c as shown in figure 1(a).18_.(one or more than one...
A uniformly doped silicon pnp transistor with base width of 2um is biased in forward active mode (with BC junction reverse biased). The doping concentrations are NE-1018cm NB-5x1016cm3, and Nc-1015cm...
A uniformly doped silicon pnp transistor with base width of 2um is biased in forward active mode (with BC junction reverse biased). The doping concentrations are NE-1018cm NB-5x1016cm3, and Nc-1015cm3. Assume DB-25 cm2/s, TB-10-s and LB 16um (a) Calculate the values of no, рво, and nco. (b) For VEB 0.65V, determine the respective minority carrier concentration at the edge of the depletion layer, pa(0) and ne(0) (c) Sketch the minority carrier concentration through the device and label each curve (d)...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT)...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT) is a three-terminal solid state device widely used as an amplifier (or switching) device. It consists of two n-type materials sandwiched by p-type material (npn) or two p-type and n-type. The terminals (sections) are known as emitter E, base B and collector C. Two currents and two voltages uniquely describe the behavior of the device. The third current/voltage can be determined through KCL/KVL. See...
can you do 4.83 Ar- Q Sea 100 V, what does the gain become? age at...
can
you do 4.83
Ar- Q Sea 100 V, what does the gain become? age at the collector. (b) Replacing the transistor by its T model, da the small-signal equivalent circuit of the a plifier. Analyze the resulting circuit to dete mine the voltage gain t/ 04.81 Consider the CE amplifier circuit of Fig. 4.43(a). It is required to design the circuit (i.e., find values for I and Rc) to meet the following specifications: (a) R,5kn (b) the voltage gain...
Need help with schematics for blocks 3, 4 and 5!!!!!! Include all schematics and wiring along with the component values...
Need help with schematics for blocks 3, 4 and
5!!!!!!
Include all schematics and wiring along with the component
values and how you acquired them. Explain how each block functions
and label any figures.
Need schematics for blocks 3, 4 and 5!!!!!!
Goal For your final project you will be asked to design and assemble a system in which you will input a stereo audio signal, mix the channels into a single mono signal, amplify the signal, filter it to...
A common source amplifier circuit based on a single n-channel MOSFET is shown in Figure 4b. Assume that the transconductance gm-60 mS (equivalent to mA/ V) and drain source resistance, os,...
A common source amplifier circuit based on a single n-channel MOSFET is shown in Figure 4b. Assume that the transconductance gm-60 mS (equivalent to mA/ V) and drain source resistance, os, is so large it may be neglected. 0) Calculate the open circuit voltage gain Av Yout/ Vis. i) The amplifier has a load of 10 k2. Determine the current gain Va. = 12 V 150k 4k3 Vout Vin 200k GND = 0 V Figure 4b a) State the name...
These are the four modes for the bipolar junction transistors
(PNP type).
FOR THE ACTIVE CASE: I am having trouble understanding why the
minority carriers (electrons) increase in the emitter region as you
approach the depletion region. Similarly, why is there so much
minority carriers in the base (and why does it decrease as it
approaches the base collector junction). Also why are the minority
carriers (n) in the collector region initially very low, the
increases?
Can you explain how...
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base current gain, α 0.95. The input emitter current is IE-4.6 mA. a) Calculate the collector current Ic b) Calculate the common-emitter current gain, B c) Calculate the base current IB IB
Please answer and show all your work. Thank you!
6- A silicon pnp transistor has impurity concentrations of 5 x 1018 cm3, 7 x 1016 cm-3, and 2 × 1016 cm-3 in the emitter, base and collector, respectively. The base width is 1.0 ?m, and the device cross-sectional area is 0.2 mm2. When the emitter-base junction is forward biased to 0.5 V and the base-collector junction is reverse biased to 5 V, calculate the neutral base width and the minority...
HELP with finding 8 and 9
2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (kT/q) In(Ic/Is), in which Is is the saturation current of the emitter-base junction (a) (3 pts) Choose any statement below that correctly describe the effect of temperature on the property of the BIT under a constant 1c as shown in figure 1(a).18_.(one or more than one...
A uniformly doped silicon pnp transistor with base width of 2um is biased in forward active mode (with BC junction reverse biased). The doping concentrations are NE-1018cm NB-5x1016cm3, and Nc-1015cm3. Assume DB-25 cm2/s, TB-10-s and LB 16um (a) Calculate the values of no, рво, and nco. (b) For VEB 0.65V, determine the respective minority carrier concentration at the edge of the depletion layer, pa(0) and ne(0) (c) Sketch the minority carrier concentration through the device and label each curve (d)...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT) is a three-terminal solid state device widely used as an amplifier (or switching) device. It consists of two n-type materials sandwiched by p-type material (npn) or two p-type and n-type. The terminals (sections) are known as emitter E, base B and collector C. Two currents and two voltages uniquely describe the behavior of the device. The third current/voltage can be determined through KCL/KVL. See...
can
you do 4.83
Ar- Q Sea 100 V, what does the gain become? age at the collector. (b) Replacing the transistor by its T model, da the small-signal equivalent circuit of the a plifier. Analyze the resulting circuit to dete mine the voltage gain t/ 04.81 Consider the CE amplifier circuit of Fig. 4.43(a). It is required to design the circuit (i.e., find values for I and Rc) to meet the following specifications: (a) R,5kn (b) the voltage gain...
Need help with schematics for blocks 3, 4 and
5!!!!!!
Include all schematics and wiring along with the component
values and how you acquired them. Explain how each block functions
and label any figures.
Need schematics for blocks 3, 4 and 5!!!!!!
Goal For your final project you will be asked to design and assemble a system in which you will input a stereo audio signal, mix the channels into a single mono signal, amplify the signal, filter it to...
A common source amplifier circuit based on a single n-channel MOSFET is shown in Figure 4b. Assume that the transconductance gm-60 mS (equivalent to mA/ V) and drain source resistance, os, is so large it may be neglected. 0) Calculate the open circuit voltage gain Av Yout/ Vis. i) The amplifier has a load of 10 k2. Determine the current gain Va. = 12 V 150k 4k3 Vout Vin 200k GND = 0 V Figure 4b a) State the name...
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