HELP with finding 8 and 9 2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (k...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT) is a three-terminal solid state device widely used as an amplifier (or switching) device. It consists of two n-type materials sandwiched by p-type material (npn) or two p-type and n-type. The terminals (sections) are known as emitter E, base B and collector C. Two currents and two voltages uniquely describe the behavior of the device. The third current/voltage can be determined through KCL/KVL. See...
draw a base biased circuit and refered to question 5 and complete table. please draw the fixed bias diagram circuit and follow throught step on the next question. Figure 1. Bipolar junction transistor under base bias/fixed bias 5. In the circuit drawn in Figure 1, label the components with the following values: Base voltage, Collector voltage10V Base resistance Collector resistance Base - emitter voltage 2.7 k2 0.7 V 160 6. Connect the circuit drawn in Figure 1 on the breadboard....