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question 3 and 4 Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region wi...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...
Consider a silicon device (which happens to be an npn bipolar transistor) with an emitter doping...
Consider a silicon device (which happens to be an npn bipolar transistor) with an emitter doping of 10^17/cm3, a base doping of 8x10^15/cm3 and a collector doping of 2x10^15/cm3. Carefully calculate how the band diagram, charge density, electric field and electrostatic potential as a function of distance for this device changes from the equilibrium case when this bipolar transistor is properly biased to work as an amplifier. In other words, show how the band diagram changes when the emitter-base junction...
Problem 2. A silicon NPN bipolar transistor has the following specifications: Emitter: N+: ND =1018 cm-3...
Problem 2. A silicon NPN bipolar transistor has the following specifications: Emitter: N+: ND =1018 cm-3 , base: p-type, NA=1015 cm-3, collector: N-type, ND=5x1015 cm-3 . 1. Draw the energy band diagram of the transistor at thermal equilibrium, 2. If the transistor is biased at Normal Active Mode, emitter-base junction forward biased with 1 V, and collector-base junction is reverse biased with 4V, draw the energy band diagram.
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base...
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base current gain, α 0.95. The input emitter current is IE-4.6 mA. a) Calculate the collector current Ic b) Calculate the common-emitter current gain, B c) Calculate the base current IB IB
Please answer and show all your work. Thank you! 6- A silicon pnp transistor has impurity...
Please answer and show all your work. Thank you!
6- A silicon pnp transistor has impurity concentrations of 5 x 1018 cm3, 7 x 1016 cm-3, and 2 × 1016 cm-3 in the emitter, base and collector, respectively. The base width is 1.0 ?m, and the device cross-sectional area is 0.2 mm2. When the emitter-base junction is forward biased to 0.5 V and the base-collector junction is reverse biased to 5 V, calculate the neutral base width and the minority...
T=300K, Ni=1E10cm-3 1. [BJT Forward-Active Current] For a npn BJT with cross-section as below: (a) [20%]...
T=300K, Ni=1E10cm-3
1. [BJT Forward-Active Current] For a npn BJT with cross-section as below: (a) [20%] Assuming VBE 0.8 V, calculate the base neutral region width (WB), and confirm whether WB< Ln. (Hint: consider the depletion widths at the base/emitter and base/collector junctions.) (b) [3090] Assuming VBE-0.8 V. calculate lc. IB and IE. Note: use the appended graphs for Ln and Dn BE 50 ?m 50 ?m Emitter Il Base 0.4 um Collector Active base region Nd(Emitter) 1 x 1020...
A Si pnp transistor has the following properties at room temperature: 4. .ni-1.5x1010 cm3 tn-tp 0.1 us . DnDp-10 cm2/s NE-5x1018 cm3 Ng-N-1016 cm3 Emitter width: wF4 μm Distance from base/emitter...
A Si pnp transistor has the following properties at room temperature: 4. .ni-1.5x1010 cm3 tn-tp 0.1 us . DnDp-10 cm2/s NE-5x1018 cm3 Ng-N-1016 cm3 Emitter width: wF4 μm Distance from base/emitter interface to base/collector interface: W-1 um Cross-sectional area: 10 cm2 α 0.9948 (5 points) (5 points) a. Calculate the neutral base width (Ws) for Vco 0 and VEB 0.6 V. b. Calculate β, le, la, and lc for Vc8-0 and Vea-0.6 V
A Si pnp transistor has the following...
Please explain part A in details thx! Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 a...
Please explain part A in details thx!
Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 and 3x1018, respectively. The lengths of emitter, base, and collector are 0.5um, 0.2um, and 0.5 um.. The dielectric constant of silicon is 11.8 and the intrinsic carrier concentration at 300 K is 1.5x1010 cm3. Assume that a 0.026 eV at 300 K. 0.99, e...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT)...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT) is a three-terminal solid state device widely used as an amplifier (or switching) device. It consists of two n-type materials sandwiched by p-type material (npn) or two p-type and n-type. The terminals (sections) are known as emitter E, base B and collector C. Two currents and two voltages uniquely describe the behavior of the device. The third current/voltage can be determined through KCL/KVL. See...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base current gain, α 0.95. The input emitter current is IE-4.6 mA. a) Calculate the collector current Ic b) Calculate the common-emitter current gain, B c) Calculate the base current IB IB
Please answer and show all your work. Thank you!
6- A silicon pnp transistor has impurity concentrations of 5 x 1018 cm3, 7 x 1016 cm-3, and 2 × 1016 cm-3 in the emitter, base and collector, respectively. The base width is 1.0 ?m, and the device cross-sectional area is 0.2 mm2. When the emitter-base junction is forward biased to 0.5 V and the base-collector junction is reverse biased to 5 V, calculate the neutral base width and the minority...
T=300K, Ni=1E10cm-3
1. [BJT Forward-Active Current] For a npn BJT with cross-section as below: (a) [20%] Assuming VBE 0.8 V, calculate the base neutral region width (WB), and confirm whether WB< Ln. (Hint: consider the depletion widths at the base/emitter and base/collector junctions.) (b) [3090] Assuming VBE-0.8 V. calculate lc. IB and IE. Note: use the appended graphs for Ln and Dn BE 50 ?m 50 ?m Emitter Il Base 0.4 um Collector Active base region Nd(Emitter) 1 x 1020...
A Si pnp transistor has the following properties at room temperature: 4. .ni-1.5x1010 cm3 tn-tp 0.1 us . DnDp-10 cm2/s NE-5x1018 cm3 Ng-N-1016 cm3 Emitter width: wF4 μm Distance from base/emitter interface to base/collector interface: W-1 um Cross-sectional area: 10 cm2 α 0.9948 (5 points) (5 points) a. Calculate the neutral base width (Ws) for Vco 0 and VEB 0.6 V. b. Calculate β, le, la, and lc for Vc8-0 and Vea-0.6 V
A Si pnp transistor has the following...
Please explain part A in details thx!
Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 and 3x1018, respectively. The lengths of emitter, base, and collector are 0.5um, 0.2um, and 0.5 um.. The dielectric constant of silicon is 11.8 and the intrinsic carrier concentration at 300 K is 1.5x1010 cm3. Assume that a 0.026 eV at 300 K. 0.99, e...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT) is a three-terminal solid state device widely used as an amplifier (or switching) device. It consists of two n-type materials sandwiched by p-type material (npn) or two p-type and n-type. The terminals (sections) are known as emitter E, base B and collector C. Two currents and two voltages uniquely describe the behavior of the device. The third current/voltage can be determined through KCL/KVL. See...
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