A Si p-n-p transistor has impurity concentrations of6*1018, 7 1015 and 9*1017 cm3 in the emitter, base and collector regions correspondingly. The corresponding carrier lifetimes are 10 10-7, and...
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6- A silicon pnp transistor has impurity concentrations of 5 x 1018 cm3, 7 x 1016 cm-3, and 2 × 1016 cm-3 in the emitter, base and collector, respectively. The base width is 1.0 ?m, and the device cross-sectional area is 0.2 mm2. When the emitter-base junction is forward biased to 0.5 V and the base-collector junction is reverse biased to 5 V, calculate the neutral base width and the minority...
Problem 2. A silicon NPN bipolar transistor has the following specifications: Emitter: N+: ND =1018 cm-3 , base: p-type, NA=1015 cm-3, collector: N-type, ND=5x1015 cm-3 . 1. Draw the energy band diagram of the transistor at thermal equilibrium, 2. If the transistor is biased at Normal Active Mode, emitter-base junction forward biased with 1 V, and collector-base junction is reverse biased with 4V, draw the energy band diagram.
Assume that the base of a Si p -n-p transistor is doped with 1016 donors/cm3 and the collector with 1015 acceptors/cm. Find the width of the depletion region on the base side of the collector junction for VCB-2 ? and-10 V. If the base width at equilibrium is 1 ??, s the Early effect for this device significant or not? [Hint: Xao(V-2V) 0.18 um.]
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
A Si pnp transistor has the following properties at room temperature: 4. .ni-1.5x1010 cm3 tn-tp 0.1 us . DnDp-10 cm2/s NE-5x1018 cm3 Ng-N-1016 cm3 Emitter width: wF4 μm Distance from base/emitter interface to base/collector interface: W-1 um Cross-sectional area: 10 cm2 α 0.9948 (5 points) (5 points) a. Calculate the neutral base width (Ws) for Vco 0 and VEB 0.6 V. b. Calculate β, le, la, and lc for Vc8-0 and Vea-0.6 V
A Si pnp transistor has the following...