Question

For a MOS-structure with an n-type Si, (a) estimate the inversion voltage onset assuming that the flat band condition is Vo 0.5V and draw the corresponding energy band diagram. (b) Using ND 5*1017 cm3, calculate thickness of the depletion region under applied 1V bias (assume depletion mode) (c) For the same MOS structure, sketch a C-V curve and (d) calculate high-frequency maximum and minimum capacitances assuming metal contact area of 10 um2 and Si thickness of 500A (SiO2 dielectric constant is 3.9 and Si dielectric constant is 11.8). (d) How many electrons are stored in this MOS capacitor at 1V of applied bias in accumulation?

Answer 1

Given the a Mos- Sthe th an ntype St . Ea 3.9 coニ8.asx 'o y , Ea~3.9, CoaaSo 지。 14 = 2 (4.609)-9.218 29, ND6, (29f)2 ง 2F1-66ro-5810' g.YY 10 y 12.9 = 20-12 5 67 37*1Q, w d

n/ CJ i s p= 67,34 $10 Cín 3.287%10