A silicon p+ n step junction diode at room temperature has N_d = 10^16 cm-3. a)...
A silicon p+ n step junction diode at room temperature has N_d = 10^16 cm-3.
a) What breakdown mechanism do you expect will be dominant in this device? Explain.
b) Find the approximate breakdown voltage for this diode.
c) Calculate the depletion width at the breakdown voltage.
d) What is the maximum magnitude of the electric field in the depletion region at the breakdown voltage?
Homework Answers
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A silicon p+ n step junction diode at room temperature has N_d =
10^16 cm-3.
a)...
2. (60 pts) Consider a one-sided silicon PN diode. The p-side is degenerately doped (and you...
2. (60 pts) Consider a one-sided silicon PN diode. The p-side is degenerately doped (and you can assume Ep = Ey for simplicity). The doping concentration on the n-side is Np for 0<x <too. The depletion width on the n-side is xn. Use the depletion approximation. p* ND x 0 From here, you assume that Np is given by 4x1015 cm. (h) (7 pts) What is the maximum electric field in depletion region when Va=-3 V? (i) (8 pts) As...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...
Q1) A diode has a doping of No- 1019 /cm3 on the n-type side and NA 101/cm3 on the p-type side. W...
Q1) A diode has a doping of No- 1019 /cm3 on the n-type side and NA 101/cm3 on the p-type side. What are the a) width of depletion region, b) width of depletion region in n side, c) width of depletion region in p side, d) junction potential at zero bias, e) junction width at a reverse bias of 13 V, and f) maximum electric field in zero bias just in the middle of the P-N junction at room temperature?...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
A Si step junction maintained at room temperature under equilibrium conditions has a p-side doping of...
A Si step junction maintained at room temperature under equilibrium conditions has a p-side doping of Na = 2x1015/cm3 , and an n-side doping of Nd = 1015/cm3 . Compute (a) Built-in potential Vbi (b) Depletion region width W, and xp, xn (c) Maximum electric field at x=0 (d) Electrostatic potential V at x=0 (e) Make sketches of the charge density, electric field, and electrostatic potential as a function of position x
THE REVERSE BIAS VOLTAGE APPLIED TO SILICON PN JUNCTION DIODE IS 4V, DOPING CONCENTRATION Na is...
THE REVERSE BIAS VOLTAGE APPLIED TO SILICON PN JUNCTION DIODE IS 4V, DOPING CONCENTRATION Na is 10^17 cm^-3, Nd = 10^16 cm^-3, ni = 1.3 x 10^9 cm^-3, temperature T = 273 k find the width of depletion region with the applied reverse voltage please check your answer that it is correct please it is a humble request
Consider a silicon pn step junction diode with NA-1x1018 cm3 and No 1x1017cm-3, maintained at T...
Consider a silicon pn step junction diode with NA-1x1018 cm3 and No 1x1017cm-3, maintained at T 300K. The minority carrier lifetimes in the p-side and n-side are τη-10-8 s and Tp-10-7 s, respectively. a) Calculate the minority carrier densities at the edges of the depletion region when the applied voltage (VA) is 0.6 V. of the junction, for the applied bias voltage of part (a) densities are equal in magnitude, for the applied voltage of part (a). b) Sketch the...
4. AP-N abrupt junction is formed in Silicon as follows: The P-side has a uniform acceptor...
4. AP-N abrupt junction is formed in Silicon as follows: The P-side has a uniform acceptor concentration of 2E18/cm^3 and the N-side has a uniform donor concentration of 2E15/cm^3. (a) Find the built-in voltage, V of the P-N junction at 300K. (b) Find the width of the depletion regions in the P and N regions of the transition region for zero reverse bias and for 5V reverse bias. (c) What is the depletion capacitance per unit area with zero reverse...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...
1. (2) A Si p-n junction has sides with boron doping at 107 cm and phosphorus...
1. (2) A Si p-n junction has sides with boron doping at 107 cm and phosphorus doping at 5.0x10^? cm? The junction has a cross-sectional area of 104 cm. It is in equilibrium at a temperature of 300 K. For Si, the intrinsic charge carrier density is 1.5x100 cm and the dielectric constant is 11.8. State the contact potential, the total depletion region width, the depletion region widths on the p-side and n- side, and the peak electric field. What...
2. (60 pts) Consider a one-sided silicon PN diode. The p-side is degenerately doped (and you can assume Ep = Ey for simplicity). The doping concentration on the n-side is Np for 0<x <too. The depletion width on the n-side is xn. Use the depletion approximation. p* ND x 0 From here, you assume that Np is given by 4x1015 cm. (h) (7 pts) What is the maximum electric field in depletion region when Va=-3 V? (i) (8 pts) As...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...
Q1) A diode has a doping of No- 1019 /cm3 on the n-type side and NA 101/cm3 on the p-type side. What are the a) width of depletion region, b) width of depletion region in n side, c) width of depletion region in p side, d) junction potential at zero bias, e) junction width at a reverse bias of 13 V, and f) maximum electric field in zero bias just in the middle of the P-N junction at room temperature?...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
Consider a silicon pn step junction diode with NA-1x1018 cm3 and No 1x1017cm-3, maintained at T 300K. The minority carrier lifetimes in the p-side and n-side are τη-10-8 s and Tp-10-7 s, respectively. a) Calculate the minority carrier densities at the edges of the depletion region when the applied voltage (VA) is 0.6 V. of the junction, for the applied bias voltage of part (a) densities are equal in magnitude, for the applied voltage of part (a). b) Sketch the...
4. AP-N abrupt junction is formed in Silicon as follows: The P-side has a uniform acceptor concentration of 2E18/cm^3 and the N-side has a uniform donor concentration of 2E15/cm^3. (a) Find the built-in voltage, V of the P-N junction at 300K. (b) Find the width of the depletion regions in the P and N regions of the transition region for zero reverse bias and for 5V reverse bias. (c) What is the depletion capacitance per unit area with zero reverse...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...
1. (2) A Si p-n junction has sides with boron doping at 107 cm and phosphorus doping at 5.0x10^? cm? The junction has a cross-sectional area of 104 cm. It is in equilibrium at a temperature of 300 K. For Si, the intrinsic charge carrier density is 1.5x100 cm and the dielectric constant is 11.8. State the contact potential, the total depletion region width, the depletion region widths on the p-side and n- side, and the peak electric field. What...
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