Homework Answers
Add Answer to:
2. The hole concentration in a sample of p-type silicon varies linearly from 10 cm at...
Q1 (20%): The total electron concentration in a piece of lightly doped, n-type silicon at 500...
Q1 (20%): The total electron concentration in a piece of lightly doped, n-type silicon at 500 varies linearly from 1X107 cm3 at x 0 to 6 x 10 cm at x 2 um. Electrons are supplied by an external circuit to keep this concentration constant with time. Calculate the electron current density in the silicon if no electric field is present at x 0. Assume H 1000 cm2/V-s. X-2um
Q1 (20%): The total electron concentration in a piece of lightly...
An n-type silicon with No = 1 x 1015 cm'has hole and electron mobility values of...
An n-type silicon with No = 1 x 1015 cm'has hole and electron mobility values of 500 cm/\-sec and 1500 cm²/.sec respectively. The semiconductor is maintained at 300 K. Excess hole concentration varies with distance (x) as p(x) = 1015 exp ( -.) cm3 Calculate hole diffusion current density at x = 0 and x=Lp if the lifetime of holes is 0.01 us.
A Hall sample is made of p-type silicon doped with 1019 borons/cm². Its resistivity is 0.009...
A Hall sample is made of p-type silicon doped with 1019 borons/cm². Its resistivity is 0.009 ohm-cm. The sample has a cross section of 0.2mmx2mm and a length of 50mm. A voltage of 10V is applied in the longitudinal (length) direction. The effective mass of holes is 2 of electron rest mass. Temperature is 300K. Calculate: a. The Hall coefficient, b. Hole mobility, c. Longitudinal electrical field, d. Drift velocity, e. Mean free time, f. The Hall voltage across 2mm...
For n-type silicon at room temperature, with a donor doping concentration of 10^(17) cm^(-3), approximately how...
For n-type silicon at room temperature, with a donor doping concentration of 10^(17) cm^(-3), approximately how much larger will be the electron concentration, compared to the hole concentration? Assuming ni=10^(10) cm^(-3).
Problem 10: A silicon sample maintained in equilibrium at 300 K is characterized by the energy...
Problem 10: A silicon sample maintained in equilibrium at 300 K is characterized by the energy band diagram in the figure. Answer the questions below. Also write down (on the side) the general equations that you used to get the answer 0.4 eV 2 1 a) Sketch the electric field & inside the semiconductor as a function of x. Find the b) Sketch the potential inside as a function ofx. What is the potential difference c) Make a rough sketch...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2...
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2 x 10 cm at T- 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at-O is op(0) on(0) 2 x 10 cm-. Assume the following Light p type pa .-1200 cm 2 /V-s, μ,-400 cm2 /V-s. To = 10-6 s, and T.-SX...
5. (20 points) A Silicon sample contains a small amount (1018 atoms/cm) of phosphorous (P) impurity....
5. (20 points) A Silicon sample contains a small amount (1018 atoms/cm) of phosphorous (P) impurity. (a) What is the majority charge carrier at room temperature? (b) Calculate the resistivity of this material at room temperature. Please show any assumption used in calculation. The mobility of this charge carrier is 700 cm /Vs at room temperature. (e) Show schematically the temperature effects on the mobility, concentration and conductivity of this semiconductor. 6. (20 points) For Mºsc, show schematically (a) the...
Acceptor impurity of concentration 1014 cm–3 is added to a pure silicon sample. Which of the...
Acceptor impurity of concentration 1014 cm–3 is added to a pure silicon sample. Which of the following correctly shows the hole concentration (in cm–3) at thermal equilibrium, at 500 K? Assume ?i = 1.45 x 1010 cm–3 at 300 K and neglect the temperature dependence of the band gap.
Q1 (20%): The total electron concentration in a piece of lightly doped, n-type silicon at 500 varies linearly from 1X107 cm3 at x 0 to 6 x 10 cm at x 2 um. Electrons are supplied by an external circuit to keep this concentration constant with time. Calculate the electron current density in the silicon if no electric field is present at x 0. Assume H 1000 cm2/V-s. X-2um
Q1 (20%): The total electron concentration in a piece of lightly...
An n-type silicon with No = 1 x 1015 cm'has hole and electron mobility values of 500 cm/\-sec and 1500 cm²/.sec respectively. The semiconductor is maintained at 300 K. Excess hole concentration varies with distance (x) as p(x) = 1015 exp ( -.) cm3 Calculate hole diffusion current density at x = 0 and x=Lp if the lifetime of holes is 0.01 us.
A Hall sample is made of p-type silicon doped with 1019 borons/cm². Its resistivity is 0.009 ohm-cm. The sample has a cross section of 0.2mmx2mm and a length of 50mm. A voltage of 10V is applied in the longitudinal (length) direction. The effective mass of holes is 2 of electron rest mass. Temperature is 300K. Calculate: a. The Hall coefficient, b. Hole mobility, c. Longitudinal electrical field, d. Drift velocity, e. Mean free time, f. The Hall voltage across 2mm...
Problem 10: A silicon sample maintained in equilibrium at 300 K is characterized by the energy band diagram in the figure. Answer the questions below. Also write down (on the side) the general equations that you used to get the answer 0.4 eV 2 1 a) Sketch the electric field & inside the semiconductor as a function of x. Find the b) Sketch the potential inside as a function ofx. What is the potential difference c) Make a rough sketch...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2 x 10 cm at T- 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at-O is op(0) on(0) 2 x 10 cm-. Assume the following Light p type pa .-1200 cm 2 /V-s, μ,-400 cm2 /V-s. To = 10-6 s, and T.-SX...
5. (20 points) A Silicon sample contains a small amount (1018 atoms/cm) of phosphorous (P) impurity. (a) What is the majority charge carrier at room temperature? (b) Calculate the resistivity of this material at room temperature. Please show any assumption used in calculation. The mobility of this charge carrier is 700 cm /Vs at room temperature. (e) Show schematically the temperature effects on the mobility, concentration and conductivity of this semiconductor. 6. (20 points) For Mºsc, show schematically (a) the...
Most questions answered within 3 hours.
-
The following base sequence is found for a mRNA fragment from
wild-type E. coli: 5'- UAUCAGUAGAUAAUGUAACC-3'...
asked 8 minutes ago -
For this exercise, round all regression parameters to three
decimal places.
One of the two tables...
asked 26 minutes ago -
What is the 5% level of significance for mean = 3.60, standard
deviation = 0.94, and...
asked 30 minutes ago -
Prior to beginning work on this discussion, please read the
article by Hayley Peterson, 15 Companies...
asked 59 minutes ago -
Which pair of aqueous solutions, when mixed, will form a
precipitate?
A) NaNO3 and AgC2H3O2
B)...
asked 1 hour ago -
1-Write an algorithm to get two numbers from the user (as
inputs) and calculate the sum...
asked 4 hours ago -
Define white-collar crime. What is the difference between
offender and offense-based definitions of white-collar crime? What...
asked 5 hours ago -
Consider a reaction which is 1st order with respect to A and 1st
order with respect...
asked 5 hours ago -
c++
The length of the hypotenuse of a right-angled triangle is the
square root of the...
asked 5 hours ago -
When a metal rod is heated, not only its resistance but also its
length and cross‐sectional...
asked 5 hours ago -
write a c++ program that computes the L^1 - Norm of a given
vector (L^1 norm...
asked 5 hours ago -
A manufacturer of banana chips would like to know whether its
bag filling machine works correctly...
asked 5 hours ago