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A Hall sample is made of p-type silicon doped with 1019 borons/cm². Its resistivity is 0.009...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
1. A photoresistor is made of p-type silicon with resistivity of 0.2 Qcm and recombination lifeti...
pls do ques 1 and 2
1. A photoresistor is made of p-type silicon with resistivity of 0.2 Qcm and recombination lifetime of 200 μ. when illuminated with light, the resistivity of the photoresistor decreases down to 0.05 0cm. Find the electron-hole pairs generation rate during illumination. 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination. 3. In the resistor described above, estimate mean free time, mean free path and drift velocities of...
1. A photoresistor is made of p-type silicon with resistivity of 0.2 0cm and recombination lifeti...
1. A photoresistor is made of p-type silicon with resistivity of 0.2 0cm and recombination lifetime of 200 us. When illuminated with light, the resistivity of the photoresistor decreases down to 0.OS Qcm Find the electron-hole pairs generation rate during illumination. 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination. 3. In the resistor described above, estimate mean free time, mean free path and drift velocities of electrons and holes when an electric...
1. A photoresistor is made of p-type silicon with resistivity of o.2 0cm and recombination lifeti...
pls
do ques 4 and 5
1. A photoresistor is made of p-type silicon with resistivity of o.2 0cm and recombination lifetime of 200 us. When illuminated with light, the resistivity of t Find the electron-hole pairs generation rate during illumination. he photoresistor decreases down to 0.05 Ocm 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination. 3. In the resistor described above, estimate mean free time, mean free path and drift electrons...
Test 2, ENS345, Spring 2019 1. A photoresistor is made of in-type silicon with resistivity of 10 ...
Qno 2 only
Test 2, ENS345, Spring 2019 1. A photoresistor is made of in-type silicon with resistivity of 10 Qcm and recombination lifetime of 30 ps. The photoresistor is illuminated with light so that the electron-hole pairs generation throughout its volume is resistivity of the photoresistor under illumination 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination. 3. In the resistor described above, estimate mean free time, mean free path and drift...
11. An aluminum wire with a square cross-section 2 mm on a side is carrying a current of 1.5 amps. Aluminum has a resistivity of 2.69 x 10* ohm-cm and an atormic volume of 10 cc/mol. Assuming alum...
11. An aluminum wire with a square cross-section 2 mm on a side is carrying a current of 1.5 amps. Aluminum has a resistivity of 2.69 x 10* ohm-cm and an atormic volume of 10 cc/mol. Assuming aluminum has three free electrons per atom, calculate the (a) Hall coeffcient, (b) electron mobility, (c) drift velocity, d) collision time. (e) electric field, (f) power dissipated (heat generated) per cm length, and (g) the Hall voltage across the wire in a transverse...
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm o...
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm of arsenic (As) atoms, and 1.2 x 103 cm3 of boron (B) atoms. Assume that the impurities are completely ionized and the mobilities are μ,-1500 cm2/V-s, μ,-500 cm2/V-s, independent of impurity concentrations. Also assume intrinsic carrier concentration of Si n 1.5 x 10 cm). Hint!!; we can usually use the rule for compensated semiconductors as...
**Please Show All The Steps** As I mentioned in the class assume that we have a...
**Please Show All The Steps**
As I mentioned in the class assume that we have a GaAs (Gallium
Arsenide) sample which was doped with excessive As to produce a
resistivity of 0.05 Ωm. Owing to the presence of an unknown
acceptor impurity the actual resistivity was 0.06Ωm, the sample
remaining n-type. What were the concentrations of donors and
acceptors present?
(Please take μe=0.85 m2/Vs and assume that all impurity atoms
are ionized)
PHYSICAL CONSTANTS Avagadro's Number NA- 6.02 x 10*23...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
pls do ques 1 and 2
1. A photoresistor is made of p-type silicon with resistivity of 0.2 Qcm and recombination lifetime of 200 μ. when illuminated with light, the resistivity of the photoresistor decreases down to 0.05 0cm. Find the electron-hole pairs generation rate during illumination. 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination. 3. In the resistor described above, estimate mean free time, mean free path and drift velocities of...
1. A photoresistor is made of p-type silicon with resistivity of 0.2 0cm and recombination lifetime of 200 us. When illuminated with light, the resistivity of the photoresistor decreases down to 0.OS Qcm Find the electron-hole pairs generation rate during illumination. 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination. 3. In the resistor described above, estimate mean free time, mean free path and drift velocities of electrons and holes when an electric...
pls
do ques 4 and 5
1. A photoresistor is made of p-type silicon with resistivity of o.2 0cm and recombination lifetime of 200 us. When illuminated with light, the resistivity of t Find the electron-hole pairs generation rate during illumination. he photoresistor decreases down to 0.05 Ocm 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination. 3. In the resistor described above, estimate mean free time, mean free path and drift electrons...
Qno 2 only
Test 2, ENS345, Spring 2019 1. A photoresistor is made of in-type silicon with resistivity of 10 Qcm and recombination lifetime of 30 ps. The photoresistor is illuminated with light so that the electron-hole pairs generation throughout its volume is resistivity of the photoresistor under illumination 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination. 3. In the resistor described above, estimate mean free time, mean free path and drift...
11. An aluminum wire with a square cross-section 2 mm on a side is carrying a current of 1.5 amps. Aluminum has a resistivity of 2.69 x 10* ohm-cm and an atormic volume of 10 cc/mol. Assuming aluminum has three free electrons per atom, calculate the (a) Hall coeffcient, (b) electron mobility, (c) drift velocity, d) collision time. (e) electric field, (f) power dissipated (heat generated) per cm length, and (g) the Hall voltage across the wire in a transverse...
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm of arsenic (As) atoms, and 1.2 x 103 cm3 of boron (B) atoms. Assume that the impurities are completely ionized and the mobilities are μ,-1500 cm2/V-s, μ,-500 cm2/V-s, independent of impurity concentrations. Also assume intrinsic carrier concentration of Si n 1.5 x 10 cm). Hint!!; we can usually use the rule for compensated semiconductors as...
**Please Show All The Steps**
As I mentioned in the class assume that we have a GaAs (Gallium
Arsenide) sample which was doped with excessive As to produce a
resistivity of 0.05 Ωm. Owing to the presence of an unknown
acceptor impurity the actual resistivity was 0.06Ωm, the sample
remaining n-type. What were the concentrations of donors and
acceptors present?
(Please take μe=0.85 m2/Vs and assume that all impurity atoms
are ionized)
PHYSICAL CONSTANTS Avagadro's Number NA- 6.02 x 10*23...
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