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1. A photoresistor is made of p-type silicon with resistivity of 0.2 0cm and recombination lifeti...
1. A photoresistor is made of p-type silicon with resistivity of 0.2 Qcm and recombination lifeti...
pls do ques 1 and 2
1. A photoresistor is made of p-type silicon with resistivity of 0.2 Qcm and recombination lifetime of 200 μ. when illuminated with light, the resistivity of the photoresistor decreases down to 0.05 0cm. Find the electron-hole pairs generation rate during illumination. 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination. 3. In the resistor described above, estimate mean free time, mean free path and drift velocities of...
1. A photoresistor is made of p-type silicon with resistivity of o.2 0cm and recombination lifeti...
pls
do ques 4 and 5
1. A photoresistor is made of p-type silicon with resistivity of o.2 0cm and recombination lifetime of 200 us. When illuminated with light, the resistivity of t Find the electron-hole pairs generation rate during illumination. he photoresistor decreases down to 0.05 Ocm 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination. 3. In the resistor described above, estimate mean free time, mean free path and drift electrons...
Test 2, ENS345, Spring 2019 is made of ntype silicon with resistivity of 10 am and recombination ...
Qno 5 only
Test 2, ENS345, Spring 2019 is made of ntype silicon with resistivity of 10 am and recombination lifetime of 80 με. The photoresistor is illuminated with light so that the electron-hole pairs generation throughout its volume is resistivity of the photoresistor under illumination. 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination described above, estimate mean free time, mean free path and drift velocities of electrons and holes when 3....
Test 2, ENS345, Spring 2019 1. A photoresistor is made of in-type silicon with resistivity of 10 ...
Qno 2 only
Test 2, ENS345, Spring 2019 1. A photoresistor is made of in-type silicon with resistivity of 10 Qcm and recombination lifetime of 30 ps. The photoresistor is illuminated with light so that the electron-hole pairs generation throughout its volume is resistivity of the photoresistor under illumination 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination. 3. In the resistor described above, estimate mean free time, mean free path and drift...
1 A photoresistor is made of p-type silicon with resistivity of 0.2 0cm and recombination lifetim...
1 A photoresistor is made of p-type silicon with resistivity of 0.2 0cm and recombination lifetime of 200 μ. When illuminated with light, the resistivity of the photoresistor decreases down to 0.05 gcm Find the electron-hole pairs generation rate during illumination.
1 A photoresistor is made of p-type silicon with resistivity of 0.2 0cm and recombination lifetime of 200 μ. When illuminated with light, the resistivity of the photoresistor decreases down to 0.05 gcm Find the electron-hole pairs generation rate...
Qno2 only lal Tario Test 2, ENS345, Spring 2019 r is made of n-type silicon with conductivity of 3 Scm2 and recombination 1. A photoconducto e of 50 us. When illuminated with light, the conductivity...
Qno2 only
lal Tario Test 2, ENS345, Spring 2019 r is made of n-type silicon with conductivity of 3 Scm2 and recombination 1. A photoconducto e of 50 us. When illuminated with light, the conductivity of the photoconductor increases to 5 Scm1. Find the electron-hole pairs recombination rate during illumination. 2. For the photoconductor described above, find enerey difference between quasi-Fermi levels before illumination and during illumination 3. For the photoconductor described above, estimate mean free time, mean fr magnitude...
question 3 1. A photoconductor is made of n-type silicon with conductivity of 3 Scm1 and...
question 3
1. A photoconductor is made of n-type silicon with conductivity of 3 Scm1 and recombination lifetime of 50 μs, when illuminated with light, the conductivity of the photoconductor increases to 5 Scm1. Find the electron-hole pairs recombination rate during illumination. r the photoconductor described above, find energy difference between quasi-Fermi levels before illumination and during illumination. 2. Fo 3. For the photoconductor described above, estimate mean free time, mean free path and the magnitude of the applied electric...
A photoresistor is made of n-type silicon with a resistivity of 10ohm cm and recombination lifeti...
a photoresistor is made of n-type silicon with a resistivity of 10ohm cm and recombination lifetime of 80 us. the photoresistor is illuminated with light so that the electron-hole pairs generation throughout its volume is 10 20/s.cm1. find resistivity of the photoresistor under illumination. please with details!
A Hall sample is made of p-type silicon doped with 1019 borons/cm². Its resistivity is 0.009...
A Hall sample is made of p-type silicon doped with 1019 borons/cm². Its resistivity is 0.009 ohm-cm. The sample has a cross section of 0.2mmx2mm and a length of 50mm. A voltage of 10V is applied in the longitudinal (length) direction. The effective mass of holes is 2 of electron rest mass. Temperature is 300K. Calculate: a. The Hall coefficient, b. Hole mobility, c. Longitudinal electrical field, d. Drift velocity, e. Mean free time, f. The Hall voltage across 2mm...
pls do ques 1 and 2
1. A photoresistor is made of p-type silicon with resistivity of 0.2 Qcm and recombination lifetime of 200 μ. when illuminated with light, the resistivity of the photoresistor decreases down to 0.05 0cm. Find the electron-hole pairs generation rate during illumination. 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination. 3. In the resistor described above, estimate mean free time, mean free path and drift velocities of...
pls
do ques 4 and 5
1. A photoresistor is made of p-type silicon with resistivity of o.2 0cm and recombination lifetime of 200 us. When illuminated with light, the resistivity of t Find the electron-hole pairs generation rate during illumination. he photoresistor decreases down to 0.05 Ocm 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination. 3. In the resistor described above, estimate mean free time, mean free path and drift electrons...
Qno 5 only
Test 2, ENS345, Spring 2019 is made of ntype silicon with resistivity of 10 am and recombination lifetime of 80 με. The photoresistor is illuminated with light so that the electron-hole pairs generation throughout its volume is resistivity of the photoresistor under illumination. 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination described above, estimate mean free time, mean free path and drift velocities of electrons and holes when 3....
Qno 2 only
Test 2, ENS345, Spring 2019 1. A photoresistor is made of in-type silicon with resistivity of 10 Qcm and recombination lifetime of 30 ps. The photoresistor is illuminated with light so that the electron-hole pairs generation throughout its volume is resistivity of the photoresistor under illumination 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination. 3. In the resistor described above, estimate mean free time, mean free path and drift...
1 A photoresistor is made of p-type silicon with resistivity of 0.2 0cm and recombination lifetime of 200 μ. When illuminated with light, the resistivity of the photoresistor decreases down to 0.05 gcm Find the electron-hole pairs generation rate during illumination.
1 A photoresistor is made of p-type silicon with resistivity of 0.2 0cm and recombination lifetime of 200 μ. When illuminated with light, the resistivity of the photoresistor decreases down to 0.05 gcm Find the electron-hole pairs generation rate...
Qno2 only
lal Tario Test 2, ENS345, Spring 2019 r is made of n-type silicon with conductivity of 3 Scm2 and recombination 1. A photoconducto e of 50 us. When illuminated with light, the conductivity of the photoconductor increases to 5 Scm1. Find the electron-hole pairs recombination rate during illumination. 2. For the photoconductor described above, find enerey difference between quasi-Fermi levels before illumination and during illumination 3. For the photoconductor described above, estimate mean free time, mean fr magnitude...
question 3
1. A photoconductor is made of n-type silicon with conductivity of 3 Scm1 and recombination lifetime of 50 μs, when illuminated with light, the conductivity of the photoconductor increases to 5 Scm1. Find the electron-hole pairs recombination rate during illumination. r the photoconductor described above, find energy difference between quasi-Fermi levels before illumination and during illumination. 2. Fo 3. For the photoconductor described above, estimate mean free time, mean free path and the magnitude of the applied electric...
A Hall sample is made of p-type silicon doped with 1019 borons/cm². Its resistivity is 0.009 ohm-cm. The sample has a cross section of 0.2mmx2mm and a length of 50mm. A voltage of 10V is applied in the longitudinal (length) direction. The effective mass of holes is 2 of electron rest mass. Temperature is 300K. Calculate: a. The Hall coefficient, b. Hole mobility, c. Longitudinal electrical field, d. Drift velocity, e. Mean free time, f. The Hall voltage across 2mm...
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