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In a very long p-type Si bar with cross-sectional area = 0.1 cm2 and Na-1017...
6. A long p-type Si bar, NA-5x1016 cm3, is optically excited and creates a low level of steady st...
6. A long p-type Si bar, NA-5x1016 cm3, is optically excited and creates a low level of steady state excess carriers at on the left side of the bar (x-o) creating a quasi-Fermi level separation of (E-Fp)-0.42 eV. The carriers diffuse to the right and decay exponentially. Electron and hole lifetimes are both 5 μs Also, it is room temperature, D,-18 cm2/s, Dn-36 cm3/s, and n#1.5x1010 /cm? what is the electron . concentration and current density (A/cm2) at x 50...
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2...
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2 x 10 cm at T- 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at-O is op(0) on(0) 2 x 10 cm-. Assume the following Light p type pa .-1200 cm 2 /V-s, μ,-400 cm2 /V-s. To = 10-6 s, and T.-SX...
A silicon pn junction at T = 300 K has the following parameters: Na-5 1016 cm-?,...
A silicon pn junction at T = 300 K has the following parameters: Na-5 1016 cm-?, N,-1 1016 cm-3, D.-25 cm3/s, D.-10 cm2/s, ?,0-5 x 10-7 s, and To 1 X 10-7 s. The cross-sectional area is A 10-3 cm2 and the forward- bias voltage is V,-0.625 V. Calculate the (a) minority electron diffusion cur- rent at the space charge edge, (b) minority hole diffusion current at the space charge edge, and (c) total current in the pn junction diode.
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd ...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Help please 2. Consider an infinitely long block of p-Si (NA 101 cm3 at T 300...
Help please
2. Consider an infinitely long block of p-Si (NA 101 cm3 at T 300 lminated continuously such that the system is in steady state. Assume that the sample is illuminated in two different regions where the generation rate is uniform within each region as follows: (x0, GL Gu 1020 cm3s, and x20, GL-GL2-5 1020 cm 3/s). Determine the spatial dependence of the excess electron density Διǐp(x). Use m = 10.7 s and D,--cm2 s. Also determine the x-position(s)...
A Si pnp transistor has the following properties at room temperature: 4. .ni-1.5x1010 cm3 tn-tp 0.1 us . DnDp-10 cm2/s NE-5x1018 cm3 Ng-N-1016 cm3 Emitter width: wF4 μm Distance from base/emitter...
A Si pnp transistor has the following properties at room temperature: 4. .ni-1.5x1010 cm3 tn-tp 0.1 us . DnDp-10 cm2/s NE-5x1018 cm3 Ng-N-1016 cm3 Emitter width: wF4 μm Distance from base/emitter interface to base/collector interface: W-1 um Cross-sectional area: 10 cm2 α 0.9948 (5 points) (5 points) a. Calculate the neutral base width (Ws) for Vco 0 and VEB 0.6 V. b. Calculate β, le, la, and lc for Vc8-0 and Vea-0.6 V
A Si pnp transistor has the following...
3. A long Si sample, n-doped 5x106cm, with a cross-sectional area of 0.49 cm² is optically...
3. A long Si sample, n-doped 5x106cm, with a cross-sectional area of 0.49 cm² is optically excited by a laser (the laser light is absorbed near the surface) such that 1020 per cm electron-hole pairs are generated per second at x-Oum. These excess charge carriers diffuse to the right. What is the total diffusion current at x = 40 um? Electron and hole lifetimes are both 7 us, Mp=500cm?/V-s; D.= 36cm/s.
This is for solid state electronics: Problem 4: Excess electrons and holes are generated at the...
This is for solid state electronics: Problem 4: Excess electrons and holes are generated at the end of a Si bar (at x=0). The Si is homogeneously doped with P atoms to a concentration of 1017 cm-3. The minority carrier lifetime = 1 μs. The electron diffusion coefficient = 25 cm2/s The hole diffusion coefficient = 10 cm2/s The excess electron and hole concentrations at x=0 are equal to each other and are 1015 cm-3. (a) Write the formula (with...
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minor...
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minority carrier diffusion coefficients are D 25 cm/s, Da- 10 cm2/s n,1.5x1010 cm3 kT 0.0267 Depletion region p-type n-type a) (5 points) Calculate the excess electron concentration as a function of x in the p-side (see the figure above) b) (10 points) Calculate the...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
6. A long p-type Si bar, NA-5x1016 cm3, is optically excited and creates a low level of steady state excess carriers at on the left side of the bar (x-o) creating a quasi-Fermi level separation of (E-Fp)-0.42 eV. The carriers diffuse to the right and decay exponentially. Electron and hole lifetimes are both 5 μs Also, it is room temperature, D,-18 cm2/s, Dn-36 cm3/s, and n#1.5x1010 /cm? what is the electron . concentration and current density (A/cm2) at x 50...
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2 x 10 cm at T- 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at-O is op(0) on(0) 2 x 10 cm-. Assume the following Light p type pa .-1200 cm 2 /V-s, μ,-400 cm2 /V-s. To = 10-6 s, and T.-SX...
A silicon pn junction at T = 300 K has the following parameters: Na-5 1016 cm-?, N,-1 1016 cm-3, D.-25 cm3/s, D.-10 cm2/s, ?,0-5 x 10-7 s, and To 1 X 10-7 s. The cross-sectional area is A 10-3 cm2 and the forward- bias voltage is V,-0.625 V. Calculate the (a) minority electron diffusion cur- rent at the space charge edge, (b) minority hole diffusion current at the space charge edge, and (c) total current in the pn junction diode.
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Help please
2. Consider an infinitely long block of p-Si (NA 101 cm3 at T 300 lminated continuously such that the system is in steady state. Assume that the sample is illuminated in two different regions where the generation rate is uniform within each region as follows: (x0, GL Gu 1020 cm3s, and x20, GL-GL2-5 1020 cm 3/s). Determine the spatial dependence of the excess electron density Διǐp(x). Use m = 10.7 s and D,--cm2 s. Also determine the x-position(s)...
A Si pnp transistor has the following properties at room temperature: 4. .ni-1.5x1010 cm3 tn-tp 0.1 us . DnDp-10 cm2/s NE-5x1018 cm3 Ng-N-1016 cm3 Emitter width: wF4 μm Distance from base/emitter interface to base/collector interface: W-1 um Cross-sectional area: 10 cm2 α 0.9948 (5 points) (5 points) a. Calculate the neutral base width (Ws) for Vco 0 and VEB 0.6 V. b. Calculate β, le, la, and lc for Vc8-0 and Vea-0.6 V
A Si pnp transistor has the following...
3. A long Si sample, n-doped 5x106cm, with a cross-sectional area of 0.49 cm² is optically excited by a laser (the laser light is absorbed near the surface) such that 1020 per cm electron-hole pairs are generated per second at x-Oum. These excess charge carriers diffuse to the right. What is the total diffusion current at x = 40 um? Electron and hole lifetimes are both 7 us, Mp=500cm?/V-s; D.= 36cm/s.
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minority carrier diffusion coefficients are D 25 cm/s, Da- 10 cm2/s n,1.5x1010 cm3 kT 0.0267 Depletion region p-type n-type a) (5 points) Calculate the excess electron concentration as a function of x in the p-side (see the figure above) b) (10 points) Calculate the...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
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