A Si sample is doped with NA = 5 x 1015cm 3 and optical excited uniformly...
6. A long p-type Si bar, NA-5x1016 cm3, is optically excited and creates a low level of steady state excess carriers at on the left side of the bar (x-o) creating a quasi-Fermi level separation of (E-Fp)-0.42 eV. The carriers diffuse to the right and decay exponentially. Electron and hole lifetimes are both 5 μs Also, it is room temperature, D,-18 cm2/s, Dn-36 cm3/s, and n#1.5x1010 /cm? what is the electron . concentration and current density (A/cm2) at x 50...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...
A part of the infinitely long silicon sample with 1017 cm-3 acceptors is illuminated on the left side. The illuminated light intensity varies over time as shown in the graph. For t < 0, gop = 1021 EHP/cm3-s and, for 5μs < t < 10μs , gop = 2 x 1021 EHP/cm3-s. Assume that tp = tn = 1 μs. Neglect any heating due to light illumination and assume that the sample is at room temperature. (a) (5 points) What...
Consider a uniformly doped Si sample where Hn=800cm?Ns Mp=400cm?Ns and n;=1010cm 3 and Ey=1.1eV. If na 1.21p find conductivity of the sample