A part of the infinitely long silicon sample with
1017 cm-3 acceptors is illuminated on the left side. The
illuminated
light intensity varies over time as shown in the graph. For t <
0, gop =
1021 EHP/cm3-s and, for 5μs < t < 10μs , gop = 2 x 1021
EHP/cm3-s.
Assume that tp = tn = 1 μs. Neglect any heating due to light
illumination and assume that the sample is at room
temperature.
(a) (5 points) What is the electron concentration at x=0 at
t=0?
(b) (8 points) What is the separation in quasi-Fermi levels (Fn-Fp)
at x <
0 at t < 0.
(c) (8 points) What is the electron concentration at x=0 at
t=15μs?
(d) (15 points) What is the electron concentration at x=25μm at
t=3μs?
Obtain all necessary material properties from the graphs in the
page 2
and 3 of this exam. Mark in the graphs and submit the graphs
with
your solution.
A part of the infinitely long silicon sample with 1017 cm-3 acceptors is illuminated on the...
A Si sample is doped with NA = 5 x 1015cm 3 and optical excited uniformly with gop-1019EHP/cm3,s. As suming T-300K and using carrier lifetime τη-tp-5us and diffusion coefficient D,-35cm2/s and D,- 12.5cm2Is) (a). Find the steady state electron and hole concentrations (n and p) and the separation of their quasi-Fermi levels (Fn Fp). (b). Calculate the of conductivity, σ, of the Si upon illuminating the light
6. A long p-type Si bar, NA-5x1016 cm3, is optically excited and creates a low level of steady state excess carriers at on the left side of the bar (x-o) creating a quasi-Fermi level separation of (E-Fp)-0.42 eV. The carriers diffuse to the right and decay exponentially. Electron and hole lifetimes are both 5 μs Also, it is room temperature, D,-18 cm2/s, Dn-36 cm3/s, and n#1.5x1010 /cm? what is the electron . concentration and current density (A/cm2) at x 50...
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3. (1 charge 5-poits) A semiconductor is uniformly illuminated, and generated 1015/cm3 excess carrier. If we turn off the source of illumination, a) what will be the concentration of charge carrier at t 1 us and at 10us after the illumination turned off. The carrier life time τ-10's b) ) calculate the conductivity of the sample before turning the light off, and after 10 us 3. (1 charge 5-poits) A semiconductor is uniformly illuminated, and generated 1015/cm3 excess carrier. If...
Problem 2 (25 points) In a silicon semiconductor, excess carriers are being generated at x -0 as shown below. Assume NA 2x1015 cm3, N 0. The excess carrier concentration at x-0 is 1013 cm3 and the excess carrier concentration at x = Ln is 0 (Ln ls the electron diffusion length). lụs, are D,-25 cm2/s, D,-10 cm2/s. Assume the electric field is zero, ta T = 300K. ķT1e = 0.026V. tp Light NA 2x1015 cm3 a) (15 points) Write the...