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3. A MOSFET is made on silicon substrate doped with boron with a concentration of 10 cm2. Width and length of channel are 100
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Giver) W 100-1000 0.1 CUWn urkno Then gm=? (ox untnolwn t0% onm 0.026 0.556v Vfb-0.55bv В 0.47VThen (0% -6 3 5 3x103 ד hen -1000x3. U 53%550 (6-1-5) 3.453x1500 x 10 (6-1:5) IDuW Jo- 236 m Thanh u

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Please answer question with the formulas given 3. A MOSFET is made on silicon substrate doped with boron with a concentration of 10 cm2. Width and length of channel are 100 and 0.1 micron respect...
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