Problem 1: The MOSFET as a Resistor Consider an n -poly-Si-gated long-channel n-MOSFET with WIL- 10,...
An n-channel Sí MOSFET (ni-1.5 1010 cm-3 ,er-11.8) with 50 nm thick HfO2 high- K dielectric (Er-25). The device width is W-10 m wide. The distance between the source and drain is L 0.5 μm long. The diffusion constant of the minority carriers in the channel at room temperature is 25 cm2/s. The n+ poly-Si gate is doped with Np 1020 cm-3 donors. This MOSFET is designed to have a threshold voltage of Vt 0.5 V. A gate-source voltage of...
The ID–VDS of a 1980s vintage (but “ideal”) N-MOSFET is shown in the figure. The VT = 1 V, tox = 100 nm (SiO2) and the source is grounded. (a) What regions of operation do points (1), (2), and (3) correspond to? (b) What is the applied gate voltage? (c) What is the inversion charge density (in electrons per cm2) at the source end of the channel, n(y = 0), and at the drain end of the channel, n(y =...
Vgs for part b, not Vds 7. Consider an ideal n-channel silicon MOSFET with the following device parameters: VT --0.8 V, μ,-425 cm2V-1 s-1, tox-11 nm, w: 20 μm' and L-1.2 μm at T-300 K. nm, W- 20 a) Plot the drain current ID [mA] versus drain-source voltage Vos over the range 0 < VD 3V with VGS--0.8 V, VGs 0 V and Vas +0.8 V b) Plot root saturation current ID12(sat) [mA12] versus gate-source voltage V6s over the range...
Problem 3 An n-channel MOSFET with L=1 um, W=3 um, tox=20 nm, V=0.7 V, and an effective electron mobility in the channel of 650 cm/V-s. a) If the MOSFET is biased with VG-V=3V, and Vp=2V, what is the drain current and transconductance of this MOSFET? b) Assume long channel theory is valid, what are (i) the velocities of channel carriers at the source and drain? (ii) the output resistance of the MOSFET? c) Plot channel conductance (ga) versus VG for...
Problem 3: Consider a MOS capacitor maintained at T= 300K with the following characteristics: Assume s 11.9, ox 3.9, 8.85x 10-1 F/cm, and n 1.5 x 1010cm3 Gate material is n poly-silicon Total negative oxide charge of 5x 1011q C/cm . Substrate is n-type Si, with doping concentration 1 x1016 cm-3 Oxide thickness 5 nmm The electron affinity for Si is 4.03eV? e) What is the flat capacitance? f) What is the depletion region width? g) What is the potential...