e) What is the flat capacitance? f) What is the depletion region width? g) What is the potential at the substrate surface? h) At strong inversion, i. What is the depletion width? ii. What is the voltage drop across the depletion region? iii.What is the structure capacitance? iv. What is the threshold voltage?
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Problem 3: Consider a MOS capacitor maintained at T= 300K with the following characteristics: Assume s 11.9, ox 3.9, 8.85x 10-1 F/cm, and n 1.5 x 1010cm3 Gate material is n poly-silicon Total...
Problem3: Consider a MOS capacitor maintained at T 300K with the following characteristics: Assume Esi 1.9,x 3.9,8.85 x 10-14 F/cm, and n 1.5 x 1010cm3 . Gate material is n+ poly-silicon . Total n...
Problem3: Consider a MOS capacitor maintained at T 300K with the following characteristics: Assume Esi 1.9,x 3.9,8.85 x 10-14 F/cm, and n 1.5 x 1010cm3 . Gate material is n+ poly-silicon . Total negative oxide charge of 5x 1011q C/cnm2 . Substrate is n-type Si, with doping concentration 1x1016 cm3 Oxide thickness 5 nm . The electron affinity for Si is 4.03eV? a) Draw the band diagram at equilibrium. b) From part (a). What is the substrate (bulk) condition at...
Problem 5: The gate capacitance vs. gate voltage characteristic of a p+ poly-Si gated MOS capacitor of area 1x10"cm', is as shown: Assume Esi = 11.9, Eox-39,E,-8.85 × 10-14 F/on, and nl =...
Problem 5: The gate capacitance vs. gate voltage characteristic of a p+ poly-Si gated MOS capacitor of area 1x10"cm', is as shown: Assume Esi = 11.9, Eox-39,E,-8.85 × 10-14 F/on, and nl = 1.5 x 1010 cm3 Co [Farads] 3.45x1011 >Va [Volts] 1.0 0.3 (a) Is the semiconductor (silicon) substrate doped n-type or p-type? Explain briefly. (b) Is the measurement frequency low or high? Explain briefly. (c) What is the thickness of the gate oxide (SiO2), xo? (d) Estimate the...
Consider an n-channel Silicon MOS system with a substrate resistivity of 10 0-cm and with a...
Consider an n-channel Silicon MOS system with a substrate resistivity of 10 0-cm and with a polycrystalline gate. Assume that the polysilicon gate is doped with boron atoms to a density of 1x1019 cm and that the silicon dioxide is 50 nm-thick. The channel is not biased except from the gate (Vc= VB = 0). (i) Accurately sketch the band diagram identifying flatband voltage, surface potential at inversion, depletion width at inversion, and charges at inversion. Tabulate these parameters. (ii)...
Problem 3 (25 points) Consider a MOS capacitor with p polysilicon gate and p-type silicon substrate with NA 1016 cm3. Ef- Ev in the polysilicon gate. Assume the following parameters: I200A, , 1.5x10°...
Problem 3 (25 points) Consider a MOS capacitor with p polysilicon gate and p-type silicon substrate with NA 1016 cm3. Ef- Ev in the polysilicon gate. Assume the following parameters: I200A, , 1.5x10° cm*,E, -3.9x8.854x104FIcm ox a) (5 points) Calculate the metal-semiconductor work function difference. b) (5 points) Calculate the surface potential at the threshold inversion. c) (5 points) Calculate the depletion width (in μm) at the threshold inversion. d) (5 points) Calculate the flat band voltage. e) (5 points)...
Problem l: The capacitance vs. gate voltage characteristic of a simple MOS capacitor of area 100 μιηχ 1 00pm is as shown: Assume Esi-1 1.9, Eox-3.9, Eo-8.85 >< 10-14 F/cm, and ni-1.5x 1010cm...
Problem l: The capacitance vs. gate voltage characteristic of a simple MOS capacitor of area 100 μιηχ 1 00pm is as shown: Assume Esi-1 1.9, Eox-3.9, Eo-8.85 >< 10-14 F/cm, and ni-1.5x 1010cm3 C (pF) 70 ECV) 0.25 a) What is the thickness of the gate oxide (Sio2)? b) Does the capacitor have a metal gate or poly-Si gate? Why? c) Is the substrate n-type or p-type? How do you know? d) Estimate the values of VFB and VrH. e)...
Problem 4 (25 points) Consider an n-channel MOSFET at T=300K. Assume: n polysilicon gate, t =...
Problem 4 (25 points) Consider an n-channel MOSFET at T=300K. Assume: n polysilicon gate, t = 500 A, N = 2x105cm-3,9' =10cm-2 Ox a W = 5 um, L = lum, 4. = 1000m, = 3.9€ , € = 8.854x10 " F/cm Qc is the number of electronic charges per unit area in the oxide a) (10 points) Determine the threshold voltage. b) (5 points) Is the transistor enhancement or depletion mode? Explain. c) (10 points) Assume the transistor is...
Consider a P-body MOS capacitor with following parameters: doping in the body region Na1015 cm-3, thickness...
Consider a P-body MOS capacitor with following parameters: doping in the body region Na1015 cm-3, thickness of the oxide layer tax-0.05 μm, and N+ poly-Si gate. We would like to make a MOSFET from this capacitor device, but first we must calculate the critical voltage points for the capacitor itself. Electron Affinity (energy difference between the conduction band level and vacuum level) of Si is 4.05 eV. Calculate (a) yb (hint: find the ψg and ψ's for the capacitor, for...
Q1 Which of the following is true for a MOS capacitor with a P-type body? Select...
Q1 Which of the following is true for a MOS capacitor with a P-type body? Select one: a. The charge in the inversion layer stays approximately constant as the gate voltage is increased above the threshold voltage b. The charge in the depletion region is proportional to the square root of the depletion region width, assuming that the body is uniformly doped c. In inversion, the total charge is equal to the sum of the charge in the depletion region...
Problem3: Consider a MOS capacitor maintained at T 300K with the following characteristics: Assume Esi 1.9,x 3.9,8.85 x 10-14 F/cm, and n 1.5 x 1010cm3 . Gate material is n+ poly-silicon . Total negative oxide charge of 5x 1011q C/cnm2 . Substrate is n-type Si, with doping concentration 1x1016 cm3 Oxide thickness 5 nm . The electron affinity for Si is 4.03eV? a) Draw the band diagram at equilibrium. b) From part (a). What is the substrate (bulk) condition at...
Problem 5: The gate capacitance vs. gate voltage characteristic of a p+ poly-Si gated MOS capacitor of area 1x10"cm', is as shown: Assume Esi = 11.9, Eox-39,E,-8.85 × 10-14 F/on, and nl = 1.5 x 1010 cm3 Co [Farads] 3.45x1011 >Va [Volts] 1.0 0.3 (a) Is the semiconductor (silicon) substrate doped n-type or p-type? Explain briefly. (b) Is the measurement frequency low or high? Explain briefly. (c) What is the thickness of the gate oxide (SiO2), xo? (d) Estimate the...
Consider an n-channel Silicon MOS system with a substrate resistivity of 10 0-cm and with a polycrystalline gate. Assume that the polysilicon gate is doped with boron atoms to a density of 1x1019 cm and that the silicon dioxide is 50 nm-thick. The channel is not biased except from the gate (Vc= VB = 0). (i) Accurately sketch the band diagram identifying flatband voltage, surface potential at inversion, depletion width at inversion, and charges at inversion. Tabulate these parameters. (ii)...
Problem 3 (25 points) Consider a MOS capacitor with p polysilicon gate and p-type silicon substrate with NA 1016 cm3. Ef- Ev in the polysilicon gate. Assume the following parameters: I200A, , 1.5x10° cm*,E, -3.9x8.854x104FIcm ox a) (5 points) Calculate the metal-semiconductor work function difference. b) (5 points) Calculate the surface potential at the threshold inversion. c) (5 points) Calculate the depletion width (in μm) at the threshold inversion. d) (5 points) Calculate the flat band voltage. e) (5 points)...
Problem l: The capacitance vs. gate voltage characteristic of a simple MOS capacitor of area 100 μιηχ 1 00pm is as shown: Assume Esi-1 1.9, Eox-3.9, Eo-8.85 >< 10-14 F/cm, and ni-1.5x 1010cm3 C (pF) 70 ECV) 0.25 a) What is the thickness of the gate oxide (Sio2)? b) Does the capacitor have a metal gate or poly-Si gate? Why? c) Is the substrate n-type or p-type? How do you know? d) Estimate the values of VFB and VrH. e)...
Problem 4 (25 points) Consider an n-channel MOSFET at T=300K. Assume: n polysilicon gate, t = 500 A, N = 2x105cm-3,9' =10cm-2 Ox a W = 5 um, L = lum, 4. = 1000m, = 3.9€ , € = 8.854x10 " F/cm Qc is the number of electronic charges per unit area in the oxide a) (10 points) Determine the threshold voltage. b) (5 points) Is the transistor enhancement or depletion mode? Explain. c) (10 points) Assume the transistor is...
Consider a P-body MOS capacitor with following parameters: doping in the body region Na1015 cm-3, thickness of the oxide layer tax-0.05 μm, and N+ poly-Si gate. We would like to make a MOSFET from this capacitor device, but first we must calculate the critical voltage points for the capacitor itself. Electron Affinity (energy difference between the conduction band level and vacuum level) of Si is 4.05 eV. Calculate (a) yb (hint: find the ψg and ψ's for the capacitor, for...
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