Problem l: The capacitance vs. gate voltage characteristic of a simple MOS capacitor of area 100 μιηχ 1 00pm is as shown: Assume Esi-1 1.9, Eox-3.9, Eo-8.85 >< 10-14 F/cm, and ni-1.5x 1010cm...
Problem 5: The gate capacitance vs. gate voltage characteristic of a p+ poly-Si gated MOS capacitor of area 1x10"cm', is as shown: Assume Esi = 11.9, Eox-39,E,-8.85 × 10-14 F/on, and nl = 1.5 x 1010 cm3 Co [Farads] 3.45x1011 >Va [Volts] 1.0 0.3 (a) Is the semiconductor (silicon) substrate doped n-type or p-type? Explain briefly. (b) Is the measurement frequency low or high? Explain briefly. (c) What is the thickness of the gate oxide (SiO2), xo? (d) Estimate the...
Problem3: Consider a MOS capacitor maintained at T 300K with the following characteristics: Assume Esi 1.9,x 3.9,8.85 x 10-14 F/cm, and n 1.5 x 1010cm3 . Gate material is n+ poly-silicon . Total negative oxide charge of 5x 1011q C/cnm2 . Substrate is n-type Si, with doping concentration 1x1016 cm3 Oxide thickness 5 nm . The electron affinity for Si is 4.03eV? a) Draw the band diagram at equilibrium. b) From part (a). What is the substrate (bulk) condition at...
Problem 3: Consider a MOS capacitor maintained at T= 300K with the following characteristics: Assume s 11.9, ox 3.9, 8.85x 10-1 F/cm, and n 1.5 x 1010cm3 Gate material is n poly-silicon Total negative oxide charge of 5x 1011q C/cm . Substrate is n-type Si, with doping concentration 1 x1016 cm-3 Oxide thickness 5 nmm The electron affinity for Si is 4.03eV? e) What is the flat capacitance? f) What is the depletion region width? g) What is the potential...