The ID–VDS of a 1980s vintage (but “ideal”) N-MOSFET is shown in
the figure.
The VT = 1 V, tox = 100 nm
(SiO2) and the source is grounded. (a) What regions of operation do
points (1), (2), and (3) correspond to? (b) What is the applied
gate voltage? (c) What is the inversion charge density (in
electrons per cm2) at the source end of the channel, n(y = 0), and
at the drain end of the channel, n(y = L), when the MOSFET is
biased at point (3)? (d) The gate voltage is readjusted such that
VGS - VT = 3 V. Using Matlab (or even carefully, by hand) please
plot the new ID vs. VDS curve up to VDS = 10 V. (e) Using Matlab
(or by hand) plot ID vs. VGS of this MOSFET at VDS = 1 V, for 0 ≤
VGS ≤ 10 V. (f) Determine gd when the MOSFET is biased at point
(3). Is this realistic? Why/why not? (g) Determine the
transconductance gm when the MOSFET is biased at point (3).
Homework Answers
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The ID–VDS of a 1980s vintage (but “ideal”) N-MOSFET is shown in the figure. The VT = 1 V, tox = 100 nm (SiO2) and the s...
7. Consider an ideal n-channel silicon MOSFET with the following device parameters: VT --0.8 V, μ...
Vgs for part b, not Vds
7. Consider an ideal n-channel silicon MOSFET with the following device parameters: VT --0.8 V, μ,-425 cm2V-1 s-1, tox-11 nm, w: 20 μm' and L-1.2 μm at T-300 K. nm, W- 20 a) Plot the drain current ID [mA] versus drain-source voltage Vos over the range 0 < VD 3V with VGS--0.8 V, VGs 0 V and Vas +0.8 V b) Plot root saturation current ID12(sat) [mA12] versus gate-source voltage V6s over the range...
For the n-channel E-MOSFET transistor in the circuit, the parameters are VT N = 0.4 V,...
For the n-channel E-MOSFET transistor in the circuit, the
parameters are VT N = 0.4 V, Kn =
120μA/V2. Determine VGS, ID, and
VDS. Sketch the DC and AC load lines and plot the
Q-point. Assume AC input is connected to the gate and output is
connected to the drain.
+5 V S RD= 1.2 kΩ = 14 kΩ S R) = 6 ΚΩ: Rs= 0.5 ΚΩ –5 V
Question 17 (1 point) The transconductance of an n-channel MOSFET is found to be Sm- lo/aVGs 1.75...
Question 17 (1 point) The transconductance of an n-channel MOSFET is found to be Sm- lo/aVGs 1.75 mA/V when measured at VDs 50 mV. The threshold voltage is VT 0.5 V. What is the current at VGS-0.8 V and VDs 1.5 V? Use the conductance parameter Kn found previously. a) D 6.30 mA b) ID 7.21 mA c) D, 0.963 mA d) ID-0.695 mA
Question 17 (1 point) The transconductance of an n-channel MOSFET is found to be Sm- lo/aVGs...
2. Consider an N-channel MOSFET circuit where the gate and drain terminals are shorted to- gether...
Please help, and explain as much as possible. Thank
you!
2. Consider an N-channel MOSFET circuit where the gate and drain terminals are shorted to- gether2 as shown in Figre 2. Assume that the MOSFET has trans-conductance parameter of gm = 0.5mA/V and the threshold voltage of 0.7V (a) Identify in which region the n-channel MOSFET is operating (Triode region or Saturation region)? (b) Write MATLAB code to compute the drain current for the following gate-to-source voltage, Vcs Ves-VDs 0,1,2,3,4,5,6,7...
Problem 3 An n-channel MOSFET with L=1 um, W=3 um, tox=20 nm, V=0.7 V, and an...
Problem 3 An n-channel MOSFET with L=1 um, W=3 um, tox=20 nm, V=0.7 V, and an effective electron mobility in the channel of 650 cm/V-s. a) If the MOSFET is biased with VG-V=3V, and Vp=2V, what is the drain current and transconductance of this MOSFET? b) Assume long channel theory is valid, what are (i) the velocities of channel carriers at the source and drain? (ii) the output resistance of the MOSFET? c) Plot channel conductance (ga) versus VG for...
2. Square-law theory of the MOSFET Biases VGs 3 V and Vbs 0 V are applied to an ideal n-channel MOSFET with W 70 um, L-7m, An 550 cm2/V.s, tox 50 nm, and V 1 V. Making use of the square-lavw theo...
2. Square-law theory of the MOSFET Biases VGs 3 V and Vbs 0 V are applied to an ideal n-channel MOSFET with W 70 um, L-7m, An 550 cm2/V.s, tox 50 nm, and V 1 V. Making use of the square-lavw theory, (a) determine the inversion layer charge/cm, at the midpoint 0, = L/2) of the channel. (b) determine the drain conductance (gd dip/dvps) at the specified bias point. Repeat the above calculation for Vas3 V and VDs 3 V....
In the circuit shown in Figure P11.11, the MOSFET operates in the active region, for iD...
In the circuit shown in Figure P11.11, the MOSFET operates in
the active region, for iD = 0.5 mA and vD = 3 V. This
enhancement-type PMOS has VT =−1 V,k = 0.5 mA/V2.
Find
a. RD.
b. The largest allowable value of RD for the MOSFET to remain in
the saturation region.
ip VDS VDD10 V VGS R2 Rp Figure P11.11 ww
ip VDS VDD10 V VGS R2 Rp Figure P11.11 ww
An n-channel Sí MOSFET (ni-1.5 1010 cm-3 ,er-11.8) with 50 nm thick HfO2 high- K dielectric...
An n-channel Sí MOSFET (ni-1.5 1010 cm-3 ,er-11.8) with 50 nm thick HfO2 high- K dielectric (Er-25). The device width is W-10 m wide. The distance between the source and drain is L 0.5 μm long. The diffusion constant of the minority carriers in the channel at room temperature is 25 cm2/s. The n+ poly-Si gate is doped with Np 1020 cm-3 donors. This MOSFET is designed to have a threshold voltage of Vt 0.5 V. A gate-source voltage of...
Q2 MOSFET and I-V Curves (Total 30 pts) Q2.1 Consider the band diagrams (conduction band) of...
Q2 MOSFET and I-V Curves (Total 30 pts) Q2.1 Consider the band diagrams (conduction band) of a N-MOSFET along the channel (x) direction as shown in fig. 1. In fig. 1, the solid curve shows the band diagram with the gate voltage VG = 0. All the variables have their usual meaning. Which of the dashed curves (case I or case II) in fig. 1 represents of the band diagram (conduction band) of the N-MOSFET with VG >0? 5 pts...
3. For an n-channel MOSFET with gate oxide (SiO2) thickness of 30 nm, threshold voltage of 0.7 V,...
3. For an n-channel MOSFET with gate oxide (SiO2) thickness of 30 nm, threshold voltage of 0.7 V, Z = 30 um, and length of the device is 0.9 μm, calculate the drain current for VG-3 V and VD-0.2 V. Assume that the electron channel mobility is 200 cm'/V-sec. What will be the required drain current to drive the MOS in saturation region? How the drain current will change if HfO2 with Ks 25 will be used as a gate...
Vgs for part b, not Vds
7. Consider an ideal n-channel silicon MOSFET with the following device parameters: VT --0.8 V, μ,-425 cm2V-1 s-1, tox-11 nm, w: 20 μm' and L-1.2 μm at T-300 K. nm, W- 20 a) Plot the drain current ID [mA] versus drain-source voltage Vos over the range 0 < VD 3V with VGS--0.8 V, VGs 0 V and Vas +0.8 V b) Plot root saturation current ID12(sat) [mA12] versus gate-source voltage V6s over the range...
For the n-channel E-MOSFET transistor in the circuit, the
parameters are VT N = 0.4 V, Kn =
120μA/V2. Determine VGS, ID, and
VDS. Sketch the DC and AC load lines and plot the
Q-point. Assume AC input is connected to the gate and output is
connected to the drain.
+5 V S RD= 1.2 kΩ = 14 kΩ S R) = 6 ΚΩ: Rs= 0.5 ΚΩ –5 V
Question 17 (1 point) The transconductance of an n-channel MOSFET is found to be Sm- lo/aVGs 1.75 mA/V when measured at VDs 50 mV. The threshold voltage is VT 0.5 V. What is the current at VGS-0.8 V and VDs 1.5 V? Use the conductance parameter Kn found previously. a) D 6.30 mA b) ID 7.21 mA c) D, 0.963 mA d) ID-0.695 mA
Question 17 (1 point) The transconductance of an n-channel MOSFET is found to be Sm- lo/aVGs...
Please help, and explain as much as possible. Thank
you!
2. Consider an N-channel MOSFET circuit where the gate and drain terminals are shorted to- gether2 as shown in Figre 2. Assume that the MOSFET has trans-conductance parameter of gm = 0.5mA/V and the threshold voltage of 0.7V (a) Identify in which region the n-channel MOSFET is operating (Triode region or Saturation region)? (b) Write MATLAB code to compute the drain current for the following gate-to-source voltage, Vcs Ves-VDs 0,1,2,3,4,5,6,7...
Problem 3 An n-channel MOSFET with L=1 um, W=3 um, tox=20 nm, V=0.7 V, and an effective electron mobility in the channel of 650 cm/V-s. a) If the MOSFET is biased with VG-V=3V, and Vp=2V, what is the drain current and transconductance of this MOSFET? b) Assume long channel theory is valid, what are (i) the velocities of channel carriers at the source and drain? (ii) the output resistance of the MOSFET? c) Plot channel conductance (ga) versus VG for...
2. Square-law theory of the MOSFET Biases VGs 3 V and Vbs 0 V are applied to an ideal n-channel MOSFET with W 70 um, L-7m, An 550 cm2/V.s, tox 50 nm, and V 1 V. Making use of the square-lavw theory, (a) determine the inversion layer charge/cm, at the midpoint 0, = L/2) of the channel. (b) determine the drain conductance (gd dip/dvps) at the specified bias point. Repeat the above calculation for Vas3 V and VDs 3 V....
In the circuit shown in Figure P11.11, the MOSFET operates in
the active region, for iD = 0.5 mA and vD = 3 V. This
enhancement-type PMOS has VT =−1 V,k = 0.5 mA/V2.
Find
a. RD.
b. The largest allowable value of RD for the MOSFET to remain in
the saturation region.
ip VDS VDD10 V VGS R2 Rp Figure P11.11 ww
ip VDS VDD10 V VGS R2 Rp Figure P11.11 ww
An n-channel Sí MOSFET (ni-1.5 1010 cm-3 ,er-11.8) with 50 nm thick HfO2 high- K dielectric (Er-25). The device width is W-10 m wide. The distance between the source and drain is L 0.5 μm long. The diffusion constant of the minority carriers in the channel at room temperature is 25 cm2/s. The n+ poly-Si gate is doped with Np 1020 cm-3 donors. This MOSFET is designed to have a threshold voltage of Vt 0.5 V. A gate-source voltage of...
Q2 MOSFET and I-V Curves (Total 30 pts) Q2.1 Consider the band diagrams (conduction band) of a N-MOSFET along the channel (x) direction as shown in fig. 1. In fig. 1, the solid curve shows the band diagram with the gate voltage VG = 0. All the variables have their usual meaning. Which of the dashed curves (case I or case II) in fig. 1 represents of the band diagram (conduction band) of the N-MOSFET with VG >0? 5 pts...
3. For an n-channel MOSFET with gate oxide (SiO2) thickness of 30 nm, threshold voltage of 0.7 V, Z = 30 um, and length of the device is 0.9 μm, calculate the drain current for VG-3 V and VD-0.2 V. Assume that the electron channel mobility is 200 cm'/V-sec. What will be the required drain current to drive the MOS in saturation region? How the drain current will change if HfO2 with Ks 25 will be used as a gate...
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