In the circuit shown in Figure P11.11, the MOSFET operates in the active region, for iD = 0.5 mA and vD = 3 V. This enhancement-type PMOS has VT =−1 V,k = 0.5 mA/V2.
Find
a. RD.
b. The largest allowable value of RD for the MOSFET to remain in the saturation region.
Homework Answers
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In the circuit shown in Figure P11.11, the MOSFET operates in the active region, for iD...
4. Design the circuit of Figure 4 so that the transistor operates in saturation with ID0.5mAand V3V. Let the enhancement-type PMOS transistor have VV and k, (w/L)-1m4/V2. Assume λ-Ο What is the...
4. Design the circuit of Figure 4 so that the transistor operates in saturation with ID0.5mAand V3V. Let the enhancement-type PMOS transistor have VV and k, (w/L)-1m4/V2. Assume λ-Ο What is the largest value that RD can have while maintaining saturation-region operation? VDD-+5 V o-0.5mA RG2 RG2 RD Figure 4
4. Design the circuit of Figure 4 so that the transistor operates in saturation with ID0.5mAand V3V. Let the enhancement-type PMOS transistor have VV and k, (w/L)-1m4/V2. Assume λ-Ο What...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same rel...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
The ID–VDS of a 1980s vintage (but “ideal”) N-MOSFET is shown in the figure. The VT = 1 V, tox = 100 nm (SiO2) and the s...
The ID–VDS of a 1980s vintage (but “ideal”) N-MOSFET is shown in
the figure. The VT = 1 V, tox = 100 nm
(SiO2) and the source is grounded. (a) What regions of operation do
points (1), (2), and (3) correspond to? (b) What is the applied
gate voltage? (c) What is the inversion charge density (in
electrons per cm2) at the source end of the channel, n(y = 0), and
at the drain end of the channel, n(y =...
II) The characteristics of the MOSFET in figure la are shown in figure 1b. Use the characteristic...
II) The characteristics of the MOSFET in figure la are shown in figure 1b. Use the characteristics in figure 1b, not the equations in your textbook, to answer the following A) From figure lb estimate gm and ro for the FET in the saturation region. Include calculations or an explanation with your answer B Find the values for Re Rd. VDD and VGG so that zin- 100k, zout 5k, L 2 mA and Vds-5 C) Find the GAIN-vo/vi 2oUT Rg...
An n-channel enhancement-mode MOSFET is as shown in figure. VDD = 15V ; K = 0.3...
An n-channel enhancement-mode MOSFET is as shown in figure.
VDD = 15V ; K = 0.3 mA/V ; Vt =
3V. Also given: R1 = 5.6 Mega-ohms ;
R2 = 5 Mega-ohms ; RD = 2.8 K-ohms ;
RS = 1.2 K-ohms
Find the following quantities:
a.) in mA
b.) in V
c.) in V
d.) Choose the correct operating region from the following:
Ohmic Region, Cutoff Region, or Saturation Region?
O VOD р а и - - We were unable...
will the answer be the same if it was in enhacement mode?? please explain first image...
will the answer be the same if it was in enhacement mode??
please explain
first image is QUESTION
second image is ANSWER
just answer and explain my QUESTION i asked..
The gate-to-source voltage of the depletion-mode, n-channel MOSFET shown in the circuit below is 1 V. The various operating regions of the MOSFET are described below: Cutoff Region: (VGS<V) b=0 Triode Region: (VGs > V, and ved >V) id=K [2 (Vgs - Vp) Vps - Vps?1 Saturation Region: (VGs >...
For the n-channel E-MOSFET transistor in the circuit, the parameters are VT N = 0.4 V,...
For the n-channel E-MOSFET transistor in the circuit, the
parameters are VT N = 0.4 V, Kn =
120μA/V2. Determine VGS, ID, and
VDS. Sketch the DC and AC load lines and plot the
Q-point. Assume AC input is connected to the gate and output is
connected to the drain.
+5 V S RD= 1.2 kΩ = 14 kΩ S R) = 6 ΚΩ: Rs= 0.5 ΚΩ –5 V
Consider an n-channel enhancement MOSFET with Vto = 1 V and K = 0.2 mA/V2. Part...
Consider an n-channel enhancement MOSFET with Vto = 1 V and K = 0.2 mA/V2. Part A Given that vGS = 3 V, for what minimum value of vDS is the device in the saturation region? Express your answer to three significant figures and include the appropriate units. vDSmin vDSmin = nothingnothing SubmitRequest Answer Part B Given that vGS = 3 V, for what range of vDS is the device in the triode region? Express your answers using three significant...
Question 17 (1 point) The transconductance of an n-channel MOSFET is found to be Sm- lo/aVGs 1.75...
Question 17 (1 point) The transconductance of an n-channel MOSFET is found to be Sm- lo/aVGs 1.75 mA/V when measured at VDs 50 mV. The threshold voltage is VT 0.5 V. What is the current at VGS-0.8 V and VDs 1.5 V? Use the conductance parameter Kn found previously. a) D 6.30 mA b) ID 7.21 mA c) D, 0.963 mA d) ID-0.695 mA
Question 17 (1 point) The transconductance of an n-channel MOSFET is found to be Sm- lo/aVGs...
Consider an n-channel MOSFET (Von = 0.4 V and K = 3.0 mA/V2). Let VDD =...
Consider an n-channel MOSFET (Von = 0.4 V and K = 3.0
mA/V2). Let VDD = 5.0 V, VSS =
-5.0 V, R1 = 14.0 kohm, R2 = 6.0 kohm,
RD = 1.2 kohm and RS = 0.5 kohm. Answer the
following questions assuming the transistor is at its saturation
mode.
a) Calculate VG versus ground (not VGS)
(hint: voltage division by R1 and R2 between
VDD and VSS).
b) Calculate VGS. (hint: IDS obtained by
formula = IDS obtained...
4. Design the circuit of Figure 4 so that the transistor operates in saturation with ID0.5mAand V3V. Let the enhancement-type PMOS transistor have VV and k, (w/L)-1m4/V2. Assume λ-Ο What is the largest value that RD can have while maintaining saturation-region operation? VDD-+5 V o-0.5mA RG2 RG2 RD Figure 4
4. Design the circuit of Figure 4 so that the transistor operates in saturation with ID0.5mAand V3V. Let the enhancement-type PMOS transistor have VV and k, (w/L)-1m4/V2. Assume λ-Ο What...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
The ID–VDS of a 1980s vintage (but “ideal”) N-MOSFET is shown in
the figure. The VT = 1 V, tox = 100 nm
(SiO2) and the source is grounded. (a) What regions of operation do
points (1), (2), and (3) correspond to? (b) What is the applied
gate voltage? (c) What is the inversion charge density (in
electrons per cm2) at the source end of the channel, n(y = 0), and
at the drain end of the channel, n(y =...
II) The characteristics of the MOSFET in figure la are shown in figure 1b. Use the characteristics in figure 1b, not the equations in your textbook, to answer the following A) From figure lb estimate gm and ro for the FET in the saturation region. Include calculations or an explanation with your answer B Find the values for Re Rd. VDD and VGG so that zin- 100k, zout 5k, L 2 mA and Vds-5 C) Find the GAIN-vo/vi 2oUT Rg...
An n-channel enhancement-mode MOSFET is as shown in figure.
VDD = 15V ; K = 0.3 mA/V ; Vt =
3V. Also given: R1 = 5.6 Mega-ohms ;
R2 = 5 Mega-ohms ; RD = 2.8 K-ohms ;
RS = 1.2 K-ohms
Find the following quantities:
a.) in mA
b.) in V
c.) in V
d.) Choose the correct operating region from the following:
Ohmic Region, Cutoff Region, or Saturation Region?
O VOD р а и - - We were unable...
will the answer be the same if it was in enhacement mode??
please explain
first image is QUESTION
second image is ANSWER
just answer and explain my QUESTION i asked..
The gate-to-source voltage of the depletion-mode, n-channel MOSFET shown in the circuit below is 1 V. The various operating regions of the MOSFET are described below: Cutoff Region: (VGS<V) b=0 Triode Region: (VGs > V, and ved >V) id=K [2 (Vgs - Vp) Vps - Vps?1 Saturation Region: (VGs >...
For the n-channel E-MOSFET transistor in the circuit, the
parameters are VT N = 0.4 V, Kn =
120μA/V2. Determine VGS, ID, and
VDS. Sketch the DC and AC load lines and plot the
Q-point. Assume AC input is connected to the gate and output is
connected to the drain.
+5 V S RD= 1.2 kΩ = 14 kΩ S R) = 6 ΚΩ: Rs= 0.5 ΚΩ –5 V
Question 17 (1 point) The transconductance of an n-channel MOSFET is found to be Sm- lo/aVGs 1.75 mA/V when measured at VDs 50 mV. The threshold voltage is VT 0.5 V. What is the current at VGS-0.8 V and VDs 1.5 V? Use the conductance parameter Kn found previously. a) D 6.30 mA b) ID 7.21 mA c) D, 0.963 mA d) ID-0.695 mA
Question 17 (1 point) The transconductance of an n-channel MOSFET is found to be Sm- lo/aVGs...
Consider an n-channel MOSFET (Von = 0.4 V and K = 3.0
mA/V2). Let VDD = 5.0 V, VSS =
-5.0 V, R1 = 14.0 kohm, R2 = 6.0 kohm,
RD = 1.2 kohm and RS = 0.5 kohm. Answer the
following questions assuming the transistor is at its saturation
mode.
a) Calculate VG versus ground (not VGS)
(hint: voltage division by R1 and R2 between
VDD and VSS).
b) Calculate VGS. (hint: IDS obtained by
formula = IDS obtained...
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