Consider an n-channel MOSFET (Von = 0.4 V and K = 3.0 mA/V2). Let VDD =...
Consider an n-channel MOSFET (Von = 0.4 V and K = 3.0 mA/V2). Let VDD = 5.0 V, VSS = -5.0 V, R1 = 14.0 kohm, R2 = 6.0 kohm, RD = 1.2 kohm and RS = 0.5 kohm. Answer the following questions assuming the transistor is at its saturation mode.
a) Calculate VG versus ground (not VGS) (hint: voltage division by R1 and R2 between VDD and VSS).
b) Calculate VGS. (hint: IDS obtained by formula = IDS obtained by voltage drop between VG and VSS).
c) Calculate IDS.
d) Calculate VDS.
e) Verify the assumption of saturation mode using a calculation.
Homework Answers
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Consider an n-channel MOSFET (Von = 0.4 V and K = 3.0
mA/V2). Let VDD =...
(20%) Consider an n-channel JFET with VPO= 2.0 V and IDSS= 2.0 mA. The JFET is...
(20%) Consider an n-channel JFET with VPO= 2.0 V and IDSS= 2.0 mA. The JFET is in the self-biasing circuit (page35/38B of Handout). Let Rd = 10 kohm, Rs = 2 kohm, VDD= 10.0 V and ignore Rg. a.Calculate two possible IDS values assuming the transistor is at saturation mode (hint: find IDS with quadratic formula). b. Calculate two possible VDS values based on the above result. c. Choose the right operating point (IDS and VDS) using a calculation (hint:...
For the MOSFET bias circuit shown, what value of Rd in kilohms is needed to allow the maximum possible peak- to-peak signal swing on the drain without clipping? Use Vdd- 7V, Vss-7V, Vg-1.6V, Rs 9.1kQ...
For the MOSFET bias circuit shown, what value of Rd in kilohms is needed to allow the maximum possible peak- to-peak signal swing on the drain without clipping? Use Vdd- 7V, Vss-7V, Vg-1.6V, Rs 9.1kQ, Vt-0.6V, [Vovl - [Vgsl 0.42. (Remember that (Von IVtl) Neglect the effect of channel-length modulation and body effect. (Hint: Be sure to keep the MOSFET in saturation!) V. M1 VD RD Answer: The correct answer is: 9.6
For the MOSFET bias circuit shown, what value...
Solve: For the circuit below, using a 2N7000 N-Channel MOSFET, VDD Of 20 V, V 1V...
Solve: For the circuit below, using a 2N7000 N-Channel MOSFET, VDD Of 20 V, V 1V and (kn'w/L)- 100umohs, calculate Vo, Vo and Vs and lo. Then, set an input signal Vin 25mV peak amplitude with a frequency of 1kHz. Calculate the voltage gain (Von/Vn) + VDD RG1 V 390 kn RD VRD 堲 C. C1 M1 IG=01- 10μ5 2N7000/PLP 2N7000/PLPRLoad VGS V, GS RS 15F 0.47k CS RS CS DC measurements: Calculated AC measurements: A VV Calculated
An n-channel enhancement-mode MOSFET is as shown in figure. VDD = 15V ; K = 0.3...
An n-channel enhancement-mode MOSFET is as shown in figure.
VDD = 15V ; K = 0.3 mA/V ; Vt =
3V. Also given: R1 = 5.6 Mega-ohms ;
R2 = 5 Mega-ohms ; RD = 2.8 K-ohms ;
RS = 1.2 K-ohms
Find the following quantities:
a.) in mA
b.) in V
c.) in V
d.) Choose the correct operating region from the following:
Ohmic Region, Cutoff Region, or Saturation Region?
O VOD р а и - - We were unable...
For the n-channel E-MOSFET transistor in the circuit, the parameters are VT N = 0.4 V,...
For the n-channel E-MOSFET transistor in the circuit, the
parameters are VT N = 0.4 V, Kn =
120μA/V2. Determine VGS, ID, and
VDS. Sketch the DC and AC load lines and plot the
Q-point. Assume AC input is connected to the gate and output is
connected to the drain.
+5 V S RD= 1.2 kΩ = 14 kΩ S R) = 6 ΚΩ: Rs= 0.5 ΚΩ –5 V
Consider an n-channel enhancement MOSFET with Vto = 1 V and K = 0.2 mA/V2. Part...
Consider an n-channel enhancement MOSFET with Vto = 1 V and K = 0.2 mA/V2. Part A Given that vGS = 3 V, for what minimum value of vDS is the device in the saturation region? Express your answer to three significant figures and include the appropriate units. vDSmin vDSmin = nothingnothing SubmitRequest Answer Part B Given that vGS = 3 V, for what range of vDS is the device in the triode region? Express your answers using three significant...
VOD Ro 1. [Design Problem (1)] N-channel MOSFET (NMOS) operating in "Saturation" region. a. Consider a...
VOD Ro 1. [Design Problem (1)] N-channel MOSFET (NMOS) operating in "Saturation" region. a. Consider a circuit as shown in Fig 1. b. You will need to design the circuit such that Ip = 1 (mA), VG = 0 [V], and Vp = 5 [V]. (determine values for R1, R2, Rp, and Rs) 1 W ID = 5 unCox (Vgs - Vrh)2 = K (Vgs - VTH)2 c. Use Vpp = 15 [V], Vs = -15 [V], and 2N7000 for...
3. (2 points) For the D-MOSFET circuit shown below, VDD 20 V, R1 1.8 M2, R2...
3. (2 points) For the D-MOSFET circuit shown below, VDD 20 V, R1 1.8 M2, R2 200 k2, Ro 1.5 k(2, Rs = 470 ?, VGS(OFF)--5 V, and loss 10 mA. a. If the transistor is operating at IDQ = 6.4 mA and VGSQ-_1.0 V, is the MOSFET Solve for Vosa. (Extra credit: 1 point) Determine the operating point graphically (hint: first decide DC load line using two points, then use the similar procedure in the previous problem. b. c....
Consider an nMOS transistor with VTH = 0.4 V, Kn = 140μA/V2 , length, L =...
Consider an nMOS transistor with VTH = 0.4 V, Kn = 140μA/V2 , length, L = 0.25μm, and width, W = 1.25μm. (a) Given that VGS = 1V, determine the range of values of VDS for which the device is in the saturation region. (b) Given that VGS = 1V, determine the range of values of VDS for which the device is in the triode/linar region. (c) Plot IDS vs VGS for operation in the saturation region. Ignore channel length...
4. Consider the n-channel E-MOSFET amplifier. RD 470Ω RL 3 MS2 C1 Io(on) = 12 mA C1 R2 2ΜΩ Rsig 2...
4. Consider the n-channel E-MOSFET amplifier. RD 470Ω RL 3 MS2 C1 Io(on) = 12 mA C1 R2 2ΜΩ Rsig 220Ω a) Determine the DC values ofIp, VGs, and VDs b) Find gm c) Determine AvnL, Ri, and Ro. d) Calculate Av, Avs, and Ai
4. Consider the n-channel E-MOSFET amplifier. RD 470Ω RL 3 MS2 C1 Io(on) = 12 mA C1 R2 2ΜΩ Rsig 220Ω a) Determine the DC values ofIp, VGs, and VDs b) Find gm c) Determine...
For the MOSFET bias circuit shown, what value of Rd in kilohms is needed to allow the maximum possible peak- to-peak signal swing on the drain without clipping? Use Vdd- 7V, Vss-7V, Vg-1.6V, Rs 9.1kQ, Vt-0.6V, [Vovl - [Vgsl 0.42. (Remember that (Von IVtl) Neglect the effect of channel-length modulation and body effect. (Hint: Be sure to keep the MOSFET in saturation!) V. M1 VD RD Answer: The correct answer is: 9.6
For the MOSFET bias circuit shown, what value...
Solve: For the circuit below, using a 2N7000 N-Channel MOSFET, VDD Of 20 V, V 1V and (kn'w/L)- 100umohs, calculate Vo, Vo and Vs and lo. Then, set an input signal Vin 25mV peak amplitude with a frequency of 1kHz. Calculate the voltage gain (Von/Vn) + VDD RG1 V 390 kn RD VRD 堲 C. C1 M1 IG=01- 10μ5 2N7000/PLP 2N7000/PLPRLoad VGS V, GS RS 15F 0.47k CS RS CS DC measurements: Calculated AC measurements: A VV Calculated
An n-channel enhancement-mode MOSFET is as shown in figure.
VDD = 15V ; K = 0.3 mA/V ; Vt =
3V. Also given: R1 = 5.6 Mega-ohms ;
R2 = 5 Mega-ohms ; RD = 2.8 K-ohms ;
RS = 1.2 K-ohms
Find the following quantities:
a.) in mA
b.) in V
c.) in V
d.) Choose the correct operating region from the following:
Ohmic Region, Cutoff Region, or Saturation Region?
O VOD р а и - - We were unable...
For the n-channel E-MOSFET transistor in the circuit, the
parameters are VT N = 0.4 V, Kn =
120μA/V2. Determine VGS, ID, and
VDS. Sketch the DC and AC load lines and plot the
Q-point. Assume AC input is connected to the gate and output is
connected to the drain.
+5 V S RD= 1.2 kΩ = 14 kΩ S R) = 6 ΚΩ: Rs= 0.5 ΚΩ –5 V
VOD Ro 1. [Design Problem (1)] N-channel MOSFET (NMOS) operating in "Saturation" region. a. Consider a circuit as shown in Fig 1. b. You will need to design the circuit such that Ip = 1 (mA), VG = 0 [V], and Vp = 5 [V]. (determine values for R1, R2, Rp, and Rs) 1 W ID = 5 unCox (Vgs - Vrh)2 = K (Vgs - VTH)2 c. Use Vpp = 15 [V], Vs = -15 [V], and 2N7000 for...
3. (2 points) For the D-MOSFET circuit shown below, VDD 20 V, R1 1.8 M2, R2 200 k2, Ro 1.5 k(2, Rs = 470 ?, VGS(OFF)--5 V, and loss 10 mA. a. If the transistor is operating at IDQ = 6.4 mA and VGSQ-_1.0 V, is the MOSFET Solve for Vosa. (Extra credit: 1 point) Determine the operating point graphically (hint: first decide DC load line using two points, then use the similar procedure in the previous problem. b. c....
4. Consider the n-channel E-MOSFET amplifier. RD 470Ω RL 3 MS2 C1 Io(on) = 12 mA C1 R2 2ΜΩ Rsig 220Ω a) Determine the DC values ofIp, VGs, and VDs b) Find gm c) Determine AvnL, Ri, and Ro. d) Calculate Av, Avs, and Ai
4. Consider the n-channel E-MOSFET amplifier. RD 470Ω RL 3 MS2 C1 Io(on) = 12 mA C1 R2 2ΜΩ Rsig 220Ω a) Determine the DC values ofIp, VGs, and VDs b) Find gm c) Determine...
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