will the answer be the same if it was in enhacement mode?? please explain first image...

Question

Question

will the answer be the same if it was in enhacement mode??

please explain

first image is QUESTION

second image is ANSWER

The gate-to-source voltage of the depletion-mode, n-channel MOSFET shown in the circuit below is 1 V. The various operating r

Voo DVD G K = 0.2 mA/v2 VP = -4V VGs=1 VGS VG - Vs = 1 => VG-o VG-IV VG=VD = IV VGD = VG-VD -H-ov VGD > VP ie O>-4V triode Re

just answer and explain my QUESTION i asked..

engineering Electrical-Engineering

Add a comment Improve this question Transcribed image text

Answer 1

Answer #1

If the MOSFET is n channel Enhancement type, all other parameters remain saame but the only difference is the sign of treshold voltage Vp.

In case of Depletion mode n channel MOSFET the treshold value will be negative because

Deplition Mode Drain Current, ID IN MA Enhancement Mode IDSS VGS IN VOLTS VGS IN VOLTS Transfer Characteristics www.Circuits

( CIrcuit Reference : Circuits today)

But in case of Enhancement Type nchannel MOSFET the treshold Vp ( or VGST ) will be positive because

12 !DON) DRAIN CURRENT, ID IN MA VGSON) loss Vost 2 6 -GATE-SOURCE VOLTAGE- Vas IN VOLTS Transfer Characteristic

So instead of Id = 1.8mA it's value will be 0.8mA on considering Vp (or treshold voltage) as 4V (instead of -4V)

Add a comment

Answer 2

Similar Homework Help Questions

V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same rel...

V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
This NMOS transistor has Vt=1 V and (1/2)kn'(W/L)=1 mA/V^2. Find the operating mode (cutoff, triode, or...

This NMOS transistor has Vt=1 V and (1/2)kn'(W/L)=1 mA/V^2. Find the operating mode (cutoff, triode, or saturation) and values for Vg, Id, Vd, and Vs. 49v Up Va (K
Question 2: a) Find the value of Vgs? b) If the threshold voltage of the NMOS 0.7V, identify the region o...

Question 2: a) Find the value of Vgs? b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) v,= 10V SATE e) Write the formula to calculate Current (ID) for the circuit in Figure 1 Fig. 1 Question 3: a) Find the value of Vgs* b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode, Saturation or Cutoff) c)...

In the circuit shown in Figure P11.11, the MOSFET operates in the active region, for iD...

In the circuit shown in Figure P11.11, the MOSFET operates in the active region, for iD = 0.5 mA and vD = 3 V. This enhancement-type PMOS has VT =−1 V,k = 0.5 mA/V2. Find a. RD. b. The largest allowable value of RD for the MOSFET to remain in the saturation region. ip VDS VDD10 V VGS R2 Rp Figure P11.11 ww ip VDS VDD10 V VGS R2 Rp Figure P11.11 ww
Problem #5 The NMOS transistors in the circuits below have V, = 1V and (12)k,'(W/L) =...

Problem #5 The NMOS transistors in the circuits below have V, = 1V and (12)k,'(W/L) = 1 mA/V2. For each circuit find the operating mode (cutoff, triode, or saturation) and values for VG, ID, VD, and Vs 수+9. 1. 2K 1. 2K 470K 47GK LK 1K
Q2 MOSFET and I-V Curves (Total 30 pts) Q2.1 Consider the band diagrams (conduction band) of...

Q2 MOSFET and I-V Curves (Total 30 pts) Q2.1 Consider the band diagrams (conduction band) of a N-MOSFET along the channel (x) direction as shown in fig. 1. In fig. 1, the solid curve shows the band diagram with the gate voltage VG = 0. All the variables have their usual meaning. Which of the dashed curves (case I or case II) in fig. 1 represents of the band diagram (conduction band) of the N-MOSFET with VG >0? 5 pts...

Vs 82 BATZ IOS = eration rrent (ID) for Fig. 3 VD 5V NMOS 10 0 BAT2 R1 1000 IOS . Triode, rrent (In) for Fig...

Vs 82 BATZ IOS = eration rrent (ID) for Fig. 3 VD 5V NMOS 10 0 BAT2 R1 1000 IOS . Triode, rrent (In) for Fig. 4 Question 4: W a Find the value of Vas b If the threshold voltage of the NMOS = 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) e Write the formula to calculate Current (ID) for the circuit in Figure 3. Fig. 3 Question 5: V=5V ww a...
Consider an n-channel enhancement MOSFET with Vto = 1 V and K = 0.2 mA/V2. Part...

Consider an n-channel enhancement MOSFET with Vto = 1 V and K = 0.2 mA/V2. Part A Given that vGS = 3 V, for what minimum value of vDS is the device in the saturation region? Express your answer to three significant figures and include the appropriate units. vDSmin vDSmin = nothingnothing SubmitRequest Answer Part B Given that vGS = 3 V, for what range of vDS is the device in the triode region? Express your answers using three significant...
QUESTION (1) Transistor Mi in this common base amplifier circuit has the following characteristics: +Vc VTH...

QUESTION (1) Transistor Mi in this common base amplifier circuit has the following characteristics: +Vc VTH =1 V Rp R, C. K 1 mA/V2 2 0.1 R Given: Vcc 2 mA, 10 V, lbias Ct C2 0, 5 k2, RD 2 k2 RI 10 k, R2 R (12 points) a) Determine the small signal gain, vo/Vin. (4 points) b) Determine the input resistance, Rin. (4 points) c) Determine the output resistance, Ro. Useful formulae: for n-channel MOSFET triode region =...

Lecture Summary We discussed MOSFET biasing and different regions of operations. We further discussed IV character...

Lecture Summary We discussed MOSFET biasing and different regions of operations. We further discussed IV characteristicss of ideal and non-ideal MOSFETS. Channel length modulation and effect of channel length modulation on current ID was also discussed during the lectures. Quentinductor and PN junction is also introduced in the lectures. Draw IV characteristics of an ideal diode. b Draw IV characteristics of a non-ideal diode with Vt 0.4V e Draw IV characteristics of an ideal MOSFET al d) Draw IV characteristics...

will the answer be the same if it was in enhacement mode?? please explain first image...

Homework Answers

Add Answer to:
will the answer be the same if it was in enhacement mode?? please explain first image...

Post as a guest

Earn Coins

V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same rel...

This NMOS transistor has Vt=1 V and (1/2)kn'(W/L)=1 mA/V^2. Find the operating mode (cutoff, triode, or...

Question 2: a) Find the value of Vgs? b) If the threshold voltage of the NMOS 0.7V, identify the region o...

In the circuit shown in Figure P11.11, the MOSFET operates in the active region, for iD...

Problem #5 The NMOS transistors in the circuits below have V, = 1V and (12)k,'(W/L) =...

Q2 MOSFET and I-V Curves (Total 30 pts) Q2.1 Consider the band diagrams (conduction band) of...

Vs 82 BATZ IOS = eration rrent (ID) for Fig. 3 VD 5V NMOS 10 0 BAT2 R1 1000 IOS . Triode, rrent (In) for Fig...

Consider an n-channel enhancement MOSFET with Vto = 1 V and K = 0.2 mA/V2. Part...

QUESTION (1) Transistor Mi in this common base amplifier circuit has the following characteristics: +Vc VTH...

Lecture Summary We discussed MOSFET biasing and different regions of operations. We further discussed IV character...

will the answer be the same if it was in enhacement mode?? please explain first image...

Homework Answers

Add Answer to: will the answer be the same if it was in enhacement mode?? please explain first image...

Post as a guest

Earn Coins

Add Answer to:
will the answer be the same if it was in enhacement mode?? please explain first image...