Question

Vs 82 BATZ IOS = eration rrent (ID) for Fig. 3 VD 5V NMOS 10 0 BAT2 R1 1000 IOS . Triode, rrent (In) for Fig. 4 Question 4: W a Find the value of Vas b If the threshold voltage of the NMOS = 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) e Write the formula to calculate Current (ID) for the circuit in Figure 3. Fig. 3 Question 5: V=5V ww a Find the value of VGS b) Find the value of Vps e) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) d) Write the formula to calculate Current (Ip) for the circuit in Figure 4. Fig. 4 Question 6 a) What is channel length modulation? b) Draw the large signal model of a MOSFET when channel length modulation 0. e) Draw the large signal model of a MOSFET when channel length modulation 0 Question 7: A 0.18-um fabrication process is specified to have 4 nm, p,= 450 cmN-s, and V, 0.5 V Find the value of the process transconductance parameter . For a MOSFET with minimum length fabricated in this process, find the required value of W so that the device exhibits a channel resistance r of I k2 at IV. Lecture Summary We discussed MOSFET biasing and different regions of operations. We further discussed IV characteristics of ideal and non-ideal MOSFET . Channel length modulation and effect of channel length modulation on current ID was also discussed during the lectures.

Answer 1

Question number 4 and 5 have been solved here with proper explanation.

3uestion 4: f Vas (a) Fima the value Vs 10 V VP R2=10 N MOS VS R1 BAT2 0 V fnd diveder ule wk cam ainj votage VBAT 2=0v = VBAT2 X RIR2 VasV4- V= 0- 10 = -10 V T +he NMOS 0.7V (b) If the thresold vo the the idemtify MOSFET An the draim +u 7bon usntion, a emera memtimed im the all the casis arg dincunA gd belrw, f tiode rgion () Condition PL4 VDs<Vas- V+ where VDS=DTaem to source vatage

VDS VD-Vs = VD -10 Vala vottage Vas = Gat to suurce = Thresold v Vt () Conditn Saturation VDSV4S- V+ f cut-off agion : (iff) CondiHiom V4sVt Prcttema prpar values fimd the 6V VD amd Vt Tgim peration. wR Cam frmuta gure 2 (Vas-V) (ID) (c) Write the to calceelate Curremt the ciruit im Fi 3 . KW 2 L 1 1 VDS VDS (rocens ductome parammeten where, K Mm Cox Ceaim) VDs Vps ..ID 2 - Currant equatim im saturation (Vas-Ve (sat) ID Vas-Ve = Vos 2
In problem 4, though the value of V_D is not given or clearly mentioned, but in the above calculation, it is shown that V_GS < V_t  ​​​​​because V_GS = -10 Volts and V_t = 0.7 Volts. So the NMOS in figure 4 is in Cutoff region. No current is flowing through the NMOS.

Buestin 5: ofVas fima the valee VD S V R2 Vs 0 V Vp 5 V BAT2 V 0 1O V Tm7 w

P 1 Vas VaVs VBAT2 1 V P1+R2 9.091-0 I00 X QI 100t 10 V g091 V g.0 91 V g.091 V () Fmd the valeee VDS VDS 5-0 S V VD-VS 1 VDS SV

+he NMOS O7V f Th thresold vo demtify the the MOS FE T V6s 9.091 V VDS 5 V gO91-07= 8.391 V VGsVt VDs(Vas-Va) The NMOS LO im triode framula the cir cuitim fa'gure 4 a) to calceulate Curremt Write tne the cearmemt In triode K ID VDS VDS - 2 (Vas- Ve) Vas - Vo 1, 2 2 L where, K': Mn Cox L