Question

Lecture Summary We discussed MOSFET biasing and different regions of operations. We further discussed IV characteristicss of ideal and non-ideal MOSFETS. Channel length modulation and effect of channel length modulation on current ID was also discussed during the lectures. Quentinductor and PN junction is also introduced in the lectures. Draw IV characteristics of an ideal diode. b Draw IV characteristics of a non-ideal diode with Vt 0.4V e Draw IV characteristics of an ideal MOSFET al d) Draw IV characteristics of a non-ideal MOSFET with a constant Vgs. e) What is Early Voltage? Question 2: a)Find the value of Vgs? b If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode, Saturation or Cutoff) e) Write the formula to calculate Current (In) for the circuit in Figure 1 10V BATA Fig. Question 3: a Find the value of VGs 1ov ww b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e Triode, Saturation or Cutoff) e) Write the formula to calculate Current (ID) for the circuit in Figure 2. Fig. 2 Fig. 2 Question 4 ww a) Find the value of Vgs b)If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) e) Write the formula to calculate Current (ID) for the circuit in Figure 3. M Fig.3 Question 5: a) Find the value of Vos* b) Find the value of V e) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode, Saturation or Cutoff) d Write the formula to calculate Current (I) for GS sad DS the circuit in Figure 4. Fig. 4 Question 6 a) What is channel length modulation? b) Draw the large signal model of a MOSFET when channel length modulation 0 e Draw the large signal model of a MOSFET when channel length modulation 0 Question 7: A 0.18-m fabrication process is specified to have = 4 nm, ,450 cmV-s, and V, 0.5 V Find the value of the process transconductance parameter k. For a MOSFET with minimum length fabricated in this process, find the required value of W so that the device exhibits a channel resistance of I k2 at sIV

Answer 1

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