Question

Q2 MOSFET and I-V Curves (Total 30 pts) Q2.1 Consider the band diagrams (conduction band) of a N-MOSFET along the channel (x)Q2.2 Current-voltage characteristics of a MOSFET: Fig. 2 shows the drain current (ID) vs. gate voltage (VG) characteristics aQ2.4 MOSFET Transport: The following fig. 3 shows how the drain current Ip in a long channel n-type MOSFET changes as a funct

0 0
Add a comment Improve this question Transcribed image text
Answer #1

And 2.1 ts asked in the question, the energy band diagram for Vayo will be dashed were with case - I Reason? When we opply polinear : When, Vos & Vas uve - » from the figure it can be seen that upto Vu= av, fo is small and not changing drasting drastsaturation - Vazar on set of saturation : (Voovna Vt in this point) t s av Nocu And 2.5 We know that, - Ans25 fig: 3 Jo = { u

Add a comment
Know the answer?
Add Answer to:
Q2 MOSFET and I-V Curves (Total 30 pts) Q2.1 Consider the band diagrams (conduction band) of...
Your Answer:

Post as a guest

Your Name:

What's your source?

Earn Coins

Coins can be redeemed for fabulous gifts.

Not the answer you're looking for? Ask your own homework help question. Our experts will answer your question WITHIN MINUTES for Free.
Similar Homework Help Questions
  • 2. Consider an N-channel MOSFET circuit where the gate and drain terminals are shorted to- gether...

    Please help, and explain as much as possible. Thank you! 2. Consider an N-channel MOSFET circuit where the gate and drain terminals are shorted to- gether2 as shown in Figre 2. Assume that the MOSFET has trans-conductance parameter of gm = 0.5mA/V and the threshold voltage of 0.7V (a) Identify in which region the n-channel MOSFET is operating (Triode region or Saturation region)? (b) Write MATLAB code to compute the drain current for the following gate-to-source voltage, Vcs Ves-VDs 0,1,2,3,4,5,6,7...

  • 3. For an n-channel MOSFET with gate oxide (SiO2) thickness of 30 nm, threshold voltage of 0.7 V,...

    3. For an n-channel MOSFET with gate oxide (SiO2) thickness of 30 nm, threshold voltage of 0.7 V, Z = 30 um, and length of the device is 0.9 μm, calculate the drain current for VG-3 V and VD-0.2 V. Assume that the electron channel mobility is 200 cm'/V-sec. What will be the required drain current to drive the MOS in saturation region? How the drain current will change if HfO2 with Ks 25 will be used as a gate...

  • will the answer be the same if it was in enhacement mode?? please explain first image...

    will the answer be the same if it was in enhacement mode?? please explain first image is QUESTION second image is ANSWER just answer and explain my QUESTION i asked.. The gate-to-source voltage of the depletion-mode, n-channel MOSFET shown in the circuit below is 1 V. The various operating regions of the MOSFET are described below: Cutoff Region: (VGS<V) b=0 Triode Region: (VGs > V, and ved >V) id=K [2 (Vgs - Vp) Vps - Vps?1 Saturation Region: (VGs >...

  • n_3. The gate length Q2 Consider an n-type MOSFET with NA-7x 1012 cm of the MOSFET...

    n_3. The gate length Q2 Consider an n-type MOSFET with NA-7x 1012 cm of the MOSFET L=2 um, width W=12 /um and the oxide thickness tor= 8 nm. Take N-Ny=1019 cm-3, Eg=1.12 eV, n;=1.5x1010 cm' kT-0.026 eV, vacuum permittivity eo-8.854x1014 F/cm, dielectric con- stant of oxide eo=4, dielectric constant of silicon Esi=12, electron mobil- ity n230 cm2/Vs, hole mobility p83 cm2/Vs -3 Q2.1 Calculate qoB = |Ef- E4], the oxide capacitance Cor; the maximum depletion width Wmaa and the threshold...

  • 7. Consider an ideal n-channel silicon MOSFET with the following device parameters: VT --0.8 V, μ...

    Vgs for part b, not Vds 7. Consider an ideal n-channel silicon MOSFET with the following device parameters: VT --0.8 V, μ,-425 cm2V-1 s-1, tox-11 nm, w: 20 μm' and L-1.2 μm at T-300 K. nm, W- 20 a) Plot the drain current ID [mA] versus drain-source voltage Vos over the range 0 < VD 3V with VGS--0.8 V, VGs 0 V and Vas +0.8 V b) Plot root saturation current ID12(sat) [mA12] versus gate-source voltage V6s over the range...

  • 5. You are given a MOSFET biased as shown in the figure. i) Sketch the drain current Ip when Vo is ramped up fro...

    5. You are given a MOSFET biased as shown in the figure. i) Sketch the drain current Ip when Vo is ramped up from 0V to 3 V in a log scale. log(ID ↑ I, 2 0 ) The MOSFET has switched through different operation regions (inear, saturation, subthreshold) during the ramp-up ii) The MOSFET has swit Label the different regions in the graph as you plot the curve above. iii) In dicate the values Vo's that mark the different...

  • Problem 3 An n-channel MOSFET with L=1 um, W=3 um, tox=20 nm, V=0.7 V, and an...

    Problem 3 An n-channel MOSFET with L=1 um, W=3 um, tox=20 nm, V=0.7 V, and an effective electron mobility in the channel of 650 cm/V-s. a) If the MOSFET is biased with VG-V=3V, and Vp=2V, what is the drain current and transconductance of this MOSFET? b) Assume long channel theory is valid, what are (i) the velocities of channel carriers at the source and drain? (ii) the output resistance of the MOSFET? c) Plot channel conductance (ga) versus VG for...

  • Explain the answer 1. Consider the following MOSFET characteristics. What type of device is it? A....

    Explain the answer 1. Consider the following MOSFET characteristics. What type of device is it? A. N-channel depletion-mode MOSFET B. N-channel enhancement-mode MOSFET. C. P-channel depletion-mode MOSFET. D. P-channel enhancement-mode MOSFET. Ip(mA) 1.5 1.0 0.5 V 00 V 0 0 2.0 4.0 6.0 Consider an n-channel MOSFET. Assuming no interface charge due to defects and/or traps, how would the the following parameters change when the oxide thickness is reduced? The flat band voltage VFB A. Increase B. Increase; c. Unchange:...

  • The ID–VDS of a 1980s vintage (but “ideal”) N-MOSFET is shown in the figure. The VT = 1 V, tox = 100 nm (SiO2) and the s...

    The ID–VDS of a 1980s vintage (but “ideal”) N-MOSFET is shown in the figure. The VT = 1 V, tox = 100 nm (SiO2) and the source is grounded. (a) What regions of operation do points (1), (2), and (3) correspond to? (b) What is the applied gate voltage? (c) What is the inversion charge density (in electrons per cm2) at the source end of the channel, n(y = 0), and at the drain end of the channel, n(y =...

  • Please show 18-33 clearly i am having a hard time understanding the graphing method. i understand...

    please show 18-33 clearly i am having a hard time understanding the graphing method. i understand shockleys equation fine Vertical Sens 1 MA per dn i V per dav 45mA 500 mV Fas-15V per dav I V drv Figure 3.21 Drain charactenstics for a 2N4416 JTET transislor as displayed on a 18. Using the characteristics of Fig. 5.21 21. Using Ipss 9 mA and Vp3 V for the characteristics of Fig. 5.21, calculate Ip at Vos 1 V using Shockley's...

ADVERTISEMENT
Free Homework Help App
Download From Google Play
Scan Your Homework
to Get Instant Free Answers
Need Online Homework Help?
Ask a Question
Get Answers For Free
Most questions answered within 3 hours.
ADVERTISEMENT
ADVERTISEMENT
ADVERTISEMENT