Question

Vertical Sens 1 MA per dn i V per dav 45mA 500 mV Fas-15V per dav I V drv Figure 3.21 Drain charactenstics for a 2N4416 JTET transislor as displayed on a 18. Using the characteristics of Fig. 5.21 21. Using Ipss 9 mA and Vp3 V for the characteristics of Fig. 5.21, calculate Ip at Vos 1 V using Shockley's equation and compare to the level appearing in Fig. 5.21. 27, Sketch the transfer and drain characteristics of an n-channel depletion-type MOSFET with IDss 12 mA and Vp8 V for a range of Vos-Vp to VGs 1 V 28. Given lo 14 mA and VO,-1 V. determine pp if loss 9.5 mA for a depletion-type MOS- FET 29. Given ID 4 mA at VGS--2 V. determine loss if p'p -5 V 33. (a) Sketch the transfer and drain characteristics of an n-channel enhancement-type MOSFET if Vr 3.5 V and k 04 x 10-3 A/V (b) Repeat part (a) for the transfer characteristics if Vr is maintained at 3.5 V but k is increased by 100% to 0.SX 10.3 A/V2.

please show 18-33 clearly i am having a hard time understanding the graphing method. i understand shockleys equation fine

Answer 1

石atths (s.1j:.4n1A 9 K 0.44488 moda -2V 3 MA 0.75叶 Ds Vp

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