Question

all please

TEST #3 of the FET and are unaffected by 1. Schokley's equation defines the the network in which the device is employed. (a) Vas characteristics (b) drain characteristics (c) input output characteristics (d) transfer characteristics 2. For an N-channel JFET Ipss -8 mA and Vp-6 V. If Vas-2 V then what is the value of the drain current ID? (a) 2.666 mA (b) 3.5 LA (c) 3.55 mA (d) 5.33 mA 3. D-MOSFETs can operate in: (a) The depletion mode only (b) The enhancement mode only (c) The depletion mode and the enhancement mode (d) All of the above 4. In a voltage divider-bias circuit for an N-channel JFET transistor the bias line (a) Is straight up and down parallel to the Ip axis (b) Is straight left and right parallel to the Vas axis (c) Is slanted and passing through the Ip and the Vas axis on the positive side (d) Is slanted and passes through origin 5. In the enhancement type of MOSFET the channel is formed when the gate-to-source voltage the _voltage. (a) Exceeds; pinch-off (b) Is less than; pinch-off (c) Is less than; threshold (d) Exceeds; threshold 6. Generally, it is a good design practice for linear amplifiers to choose the operating point that is approximately (a) Near the saturation region (b) Near the cut-off region (c) In the center of the active region (d) Near the origin

Answer 1

0 © solution Answer @ Jo - Toss (1-1 ² N- Channel Joss=8mA No=-6V vgs=-2v The drain ceessent Equation is To Joss Cr- rgse = 8x163 [1-3] = 8X163 [1-] 78*10*[*] = 355mA option © Hence ®

D r Enhancement mede B < Depletion 'mode - © passing on the Io and ® option Io slanted and the VGs anes through the positive side to * 2055 Spintet 2pe VG1/ epocny ka yaszó . Boorg=VG TVG

3 option @ bceeds the threshold Voltage © option @ r Areas Saturation regton - saturation linear Cuttoff